About the book
Polycrystalline silicon carbide powder was invented in the year 1893 by Acheson with a carbothermal reduction of silica sand by petroleum coke and since then it has been mass-produced industrially for different abrasive ceramic application. Until recently, almost 100 years after the material was synthetically produced, modified and improved physical vapor transport (PVT) route of production has enabled to produce defect-free single crystal SiC wafers for the electronics industry. Nowadays, it is one of the most widely used wide bandgap semiconductor material which has been commercialized for high power electronic applications. Naturally-occurring moissanite is the rarely found SiC mineral, used as the substitute of diamond in jewelry because of its high refractive index. SiC also has very high hardness and toughness which makes them an ideal candidate for structural ceramics. The low coefficient of friction enables it to be used in tribological applications. The material has both cubic and hexagonal crystal structures that have more than 250 polytypes by different stacking sequences of the lattice units. It can be formed in powder, bulk or thin-film wafer forms. There are many new routes like sol-gel processing, chemical vapor deposition (CVD), liquid phase sintering, mechanical alloying, etc. for the synthesis of SiC. The high thermal conductivity and easy production of defect-free wafers make the material to be used as substrates for high electron mobility transistors (HEMTs), among many other power device applications. This is the most emerging electronic material of choice after Si in order to keep pace with Moore's law in the semiconductor industry with low on resistance and fast speed switching.