About the book
The growing increase of absolutely all crystals can be characterized as epitaxial: any further layer has the same orientation as the previous one. Thus, homoepitaxy should be distinguished if the crystalline parameters of the substrate and the newly stacked layer are the same. Heteroepitaxy is when the crystalline parameters of the substrate and the growing crystalline layer are not the same. This procedure is possible only in the case of chemically non-interacting elements, for example, in the production of accumulated transducers with a silicon texture on sapphire. Epitaxy is freely realized if the difference in crystal lattices does not exceed 12%. With strong discrepancies, more closely packed planes and directivity are mated. Moreover, the element of the planes of one of the lattices does not contain an extension to the second. The edges of these dangling planes form misfit dislocations. Epitaxy seems to be one of the basic actions of the technological process of semiconductor devices and accumulated circuits. The term “epitaxy” was first proposed by the French scientist L. Royet in 1928 and for hundred years was filled with a rich scientific content. The book is supposed to collect and publish the results of leading researchers on various aspects of the use of molecular beam in creating structures for semiconductor electronics, growing thin semiconductor films, etc. It is supposed to reflect the main provisions of the molecular beam epitaxy process, the structure of MBE devices, the principles of their action: working volume, effusion cells, control and management of the molecular beam epitaxy process. Despite such a considerable age, the method is still continuously replenished with huge volumes of scientific and applied information, as well as the method is being improved and new versions and applications of epitaxy are emerging. All this should contribute to the fact that the proposed book will be of interest to a wide range of specialists - from scientists to students.