Open access peer-reviewed Edited Volume


Vadim Glebovsky

Institute of Solid State Physics, Russian Academy of Sciences


Molecular Epitaxy Molecular Beam Epitaxy Liquid Phase Epitaxy Monoepitaxy Heteroepitaxy Epitaxial Growing Gas Phase Epitaxion Single-crystalline GaAs Substrate Source-heater Shutters Effusion cells n- and p-Alloying elements

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About the book

The growing increase of absolutely all crystals can be characterized as epitaxial: any further layer has the same orientation as the previous one. Thus, homoepitaxy should be distinguished if the crystalline parameters of the substrate and the newly stacked layer are the same. Heteroepitaxy is when the crystalline parameters of the substrate and the growing crystalline layer are not the same. This procedure is possible only in the case of chemically non-interacting elements, for example, in the production of accumulated transducers with a silicon texture on sapphire. Epitaxy is freely realized if the difference in crystal lattices does not exceed 12%. With strong discrepancies, more closely packed planes and directivity are mated. Moreover, the element of the planes of one of the lattices does not contain an extension to the second. The edges of these dangling planes form misfit dislocations. Epitaxy seems to be one of the basic actions of the technological process of semiconductor devices and accumulated circuits. The term “epitaxy” was first proposed by the French scientist L. Royet in 1928 and for hundred years was filled with a rich scientific content. The book is supposed to collect and publish the results of leading researchers on various aspects of the use of molecular beam in creating structures for semiconductor electronics, growing thin semiconductor films, etc. It is supposed to reflect the main provisions of the molecular beam epitaxy process, the structure of MBE devices, the principles of their action: working volume, effusion cells, control and management of the molecular beam epitaxy process. Despite such a considerable age, the method is still continuously replenished with huge volumes of scientific and applied information, as well as the method is being improved and new versions and applications of epitaxy are emerging. All this should contribute to the fact that the proposed book will be of interest to a wide range of specialists - from scientists to students.

Publishing process

Book initiated and editor appointed

Date completed: October 9th 2019

Applications to edit the book are assessed and a suitable editor is selected, at which point the process begins.

Chapter proposals submitted and reviewed

Deadline for chapter proposals: October 30th 2019

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Approved chapters written in full and submitted

Deadline for full chapters: December 29th 2019

Once approved by the academic editor and publishing review team, chapters are written and submitted according to pre-agreed parameters

Full chapters peer reviewed

Review results due: March 18th 2020

Full chapter manuscripts are screened for plagiarism and undergo a Main Editor Peer Review. Results are sent to authors within 30 days of submission, with suggestions for rounds of revisions.

Book compiled, published and promoted

Expected publication date: May 17th 2020

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About the editor

Vadim Glebovsky

Institute of Solid State Physics, Russian Academy of Sciences

Vadim Glebovsky is a senior scientist at the Institute of Solid State Physics, Russian Academy of Sciences in Chernogolovka, Moscow district, Russia. He graduated from the Baikov Institute for Metallurgy, Russian Academy of Sciences, Moscow, Russia, where he successively worked as the Head of the Materials Science Department for about 40 years. As a multi-visiting Professor at the Technical University, Eindhoven, The Netherlands, from 1992 to 2002, together with Prof. H.H. Brongersma and his students, Prof. Vadim Glebovsky studied the bulk and surface processes on single crystals of W and Mo by Low-Energy Ion Scattering. In the period 1994-1995 he visited the Lawrence Livermore National Laboratories (Livermore, California, USA), where, together with Dr. M. Campbell, studied bicrystals of high-purity Mo. At the Max-Planck-Institutes fuer Metalforschung (Stuttgart, Germany), together with Prof. H. Fischmeister and Dr. P. Gumbsch, Prof. Vadim Glebovsky studied the cleavage fracture and BDT in W single crystals (1995), and later on, also in this institute, together with Dr. D. Brunner, studied the plastic properties of high-purity W single crystals (1998). His researches span various areas of the physical metallurgy of high-purity refractory metals and alloys. In particular, he is interested in both theory and practice of growing single crystals and bicrystals of transition metals, studying the crystallographically related surface properties of high-purity refractory metals of 4, 5 and 6 groups of the Periodic Table. He is an expert in the electron-beam floating zone melting technique as well as in various techniques for high-temperature processing single-crystalline and polycrystalline high-purity refractory metals and alloys. Nowadays, scientific interests of Prof. Vadim Glebovsky extends from some aspects of application his high purity refractory metals and compounds as the effective diffusion barrier layers in Very-Large-Scale Intergration (VLSI) to a new generation of high-sensitivity detectors made of low-radioactivity Ti for registration of the “Dark Matter” particles. Prof. Vadim Glebovsky has published more than 320 scientific articles and patents, 1 book in Russian on levitation melting, 5 chapters and has edited 3 books on various aspects of functional materials.

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Book chapters authored 5

Books edited 2

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