Jae-Hoon Lee was born in Seoul, Korea, in 1971. He received the B.S. degree in electronic engineering from Kwandong University, Gangneung, Korea, in 1995, and the M.S. and Ph.D. degrees in electronic engineering from Kyungpook National University, Daegu, Korea, in 2000 and 2003, respectively. His doctoral research concerned the enhanced performance of AlGaN/GaN HFET using isoelectronic Al doping effect. From 2003 to 2009, he was with Samsung Electro-Mechanics Company, Gyunggi-Do, Korea, in the LM research and development 1 group. From 2009 to 2012, he was with Samsung LED Company, Gyunggi-Do, Korea, in the GaN power research group. He has been working for Samsung Electronics Company, Giheung, Korea, in System LSI Division, Discrete Development Team since 2012 as a senior engineer. His main interests are III-nitride growth using metal organic chemical vapor deposition (MOCVD), gallium nitride-based electronic and optoelectronic devices, Si based-Field Stop IGBTs, and CMOS. He has authored and coauthored 74 technical papers in international peer-reviewed journals, five book chapters, and holds 27 U.S. and 45 Korean granted patents in his fields of expertise. He received Best Poster Paper Award at 13th Korean Conference on Semiconductors, in 2003, Paper Award (Gold Prize) from Samsung Electro-Mechanics, in 2004, Paper Award (Silver Prize) from Samsung Electro-Mechanics, in 2005, and Paper Award (Bronze Prize) from Samsung Group, in 2010. Dr. Lee is profiled in Marquis who\'s who in the world 2010, Great Minds of the 21st Century (ABI), Top 100 Engineers 2010 (IBC), and 2000 Outstanding Intellectuals of the 21st Century (IBC) in 2010. He is a reviewer for the IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Photonics Technology Letters, IEEE Journal of Quantum Electronics, Electrochemical and Solid-State Letters, and Journal of the Electrochemical Society.