Nikolai N. Kolesnikov graduated from the Physical-Chemical Department of the Moscow Chemical-Technological Institute in 1982. From 1982 to 1993, he worked at the Institute of Solid State Physics (ISSP), Russian Academy of Sciences, and has experienced the journey from Engineer to Senior Researcher. He obtained his PhD degree in Condensed Matter Physics in 1989. Since 1993, Dr. Kolesnikov has been Chief of Laboratory of the Physical-Chemical Basis of Crystallization of ISSP. Nikolai N. Kolesnikov successfully works in crystal growth from the melt and related fields. His research interests are crystal growth of II-VI compounds (ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, Cd1-xZnxTe) by zone melting, the Bridgman technique, growth of the nanocrystals of wide-gap semiconductors, investigation of properties of the refractory compound melts, and the growth of Tl-based HTSC single crystals. Dr. Kolesnikov has published over 100 papers in scientific journals and has received 38 patents.