Cost-effective and mass production of size-controlled wafers becomes one of the future trends for electronic devices. Herein, we design a Minimal Fab system for the growth of half-inch-diameter silicon wafer devices. Different from the conventional chemical vapour deposition (CVD) systems, a new-type of CVD reactor was designed and developed for the Minimal Fab. The minimal CVD reactor has a small reaction chamber for rapid growth processes. It employed (i) a vertical gas flow, (ii) heating modules using concentrated infrared light, (iii) chlorine trifluoride gas for quick reactor cleaning and (iv) optimized epitaxial growth conditions so that the reactor cleaning is not necessary. Reducing the total gas flow rate is an effective way to increase the wafer temperature. The heating process was further assisted by the absorption of infrared light by the precursor trichlorosilane. The slimly designed reflector could help in improving the heating speed.
Part of the book: Epitaxy