Chapters authored
Redox-Active Molecules for Novel Nonvolatile Memory Applications
The continuous complementary metal‐oxide‐semiconductor (CMOS) scaling is reaching fundamental limits imposed by the heat dissipation and short‐channel effects, which will finally stop the increase of integration density and the MOSFET performance predicted by Moore’s law. Molecular technology has been aggressively pursued for decades due to its potential impact on future micro‐/nanoelectronics. Molecules, especially redox‐active molecules, have become attractive due to their intrinsic redox behavior, which provides an excellent basis for low‐power, high‐density, and high‐reliability nonvolatile memory applications. This chapter briefly reviews the development of molecular electronics in the application of nonvolatile memory. From the mechanical motion of molecules in the Langmuir‐Blodgett film to new families of redox‐active molecules, memory devices involving hybrid molecular technology have shown advantageous potential in fast speed, low‐power, and high‐density nonvolatile memory and will lead to promising on‐chip memory as well as future portable electronics applications.
Part of the book: Redox