Bismuth-doped optical fiber (BDF) and bismuth/erbium co-doped optical fiber (BEDF) have attracted much attention due to their ultra-broadband luminescence in the near-infrared (NIR) region. The photobleaching effect on bismuth active centers (BACs) related to the NIR luminescence has been systematically investigated and summarized, in terms of irradiation intensity, irradiation wavelength, and temperature. All these findings not only give the deep insights into the fundamental structure of BACs but also provide an effective way to control the BACs. They play an important role for the development of BDF- and BEDF-based devices with high performance and stability under laser exposure in future.
Part of the book: Bismuth