Ronald Tetzlaff

By Angela Slavova and Ronald Tetzlaff

In this chapter we present mathematical study of memristor systems. More precisely, we apply local activity theory in order to determine the edge of chaos regime in reaction-diffusion memristor cellular nanoscale networks (RD-MCNN) and in memristor hysteresis CNN (M-HCNN). First we give an overview of mathematical models of memristors, CNN and complexity. Then we consider the above mentioned two models and we develop constructive algorithm for determination of edge of chaos in them. Based on these algorithms numerical simulations are provided. Two applications of M-HCNN model in image processing are presented.

Part of the book: Memristors

By Ahmet Samil Demirkol, Alon Ascoli, Ioannis Messaris and Ronald Tetzlaff

This chapter presents the mathematical investigation of the emergence of static patterns in a Reaction–Diffusion Memristor Cellular Nonlinear Network (RD-MCNN) structure via the application of the theory of local activity. The proposed RD-MCNN has a planar grid structure, which consists of identical memristive cells, and the couplings are established in a purely resistive fashion. The single cell has a compact design being composed of a locally active memristor in parallel with a capacitor, besides the bias circuitry, namely a DC voltage source and its series resistor. We first introduce the mathematical model of the locally active memristor and then study the main characteristics of its AC equivalent circuit. Later on, we perform a stability analysis to obtain the stability criteria for the single cell. Consequently, we apply the theory of local activity to extract the parameter space associated with locally active, edge-of-chaos, and sharp-edge-of-chaos domains, performing all the necessary calculations parametrically. The corresponding parameter space domains are represented in terms of intrinsic cell characteristics such as the DC operating point, the capacitance, and the coupling resistance. Finally, we simulate the proposed RD-MCNN structure where we demonstrate the emergence of pattern formation for various values of the design parameters.

Part of the book: Memristor