The dielectric properties of Ba0.5Sr0.5TiO3 (BST) thin films are sensitive to the relative crystallographic orientation of the films. LaNiO3 (LNO) and MgO were deposited as buffer layer on Si substrate before BST. The effect of buffer layer such as LNO, MgO and MgO/LNO bilayer on the microstructure and dielectric properties of BST were extensively investigated. The preferred (100) orientation of LNO by radio frequency (RF) magnetron sputtering was dominated by the substrate temperature and highly (100)-oriented LNO thin films were grown on Si substrates at 300°C. The oriented (100) growth of sputtered BST thin films was strongly affected by the orientation of LNO thin films and the tunability of BST thin film was greatly improved with the insertion of (100)-textured LNO buffer layer. In addition, MgO, as a buffer layer, was deposited by RF magnetron sputtering. The results show that the crystallization of BST was also enhanced by the insertion of MgO buffer layer, which enhances the oriental growth of BST along (100). Also, the tunability of the BST thin films was improved and the dielectric loss greatly decreased. Finally, CPW with BST/MgO multilayer was fabricated and the scattering (S) parameters were tested.
Part of the book: Coatings and Thin-Film Technologies