This chapter provides a brief introduction to thin-film transistors (TFTs) based on transparent semiconducting metal oxides (SMOs) with a focus on solution-processed devices. The electrical properties of TFTs comprising different active layer compositions (zinc oxide, aluminum-doped zinc oxide and indium-zinc oxide) produced by spin-coating and spray-pyrolysis deposition are presented and compared. The electrical performance of TFTs is evaluated from parameters as the saturation mobility (μsat), the TFT threshold voltage (Vth) and the on/off current (Ion/Ioff) ratio to demonstrate the dependence on the composition of the device-active layer and on ambient characterization conditions (exposure to UV radiation and to air).
Part of the book: Design, Simulation and Construction of Field Effect Transistors