Moumita Mukherjee

University of CalcuttaIndia

Dr. Moumita Mukherjee completed higher-education from Presidency College, Calcutta, India and University of Calcutta, India. She received M.Sc. degree in Physics with specialization in Electronics and Communication and Ph.D. (Tech) in Radio Physics and Electronics from University of Calcutta, India. She worked as a Senior Research Fellow (SRF) of Defence Research and Development Organization (DRDO), Ministry of Defence, Govt. of India, under Visva Bharati University, India, Advanced Technology Centre, Jadavpur University, India and Centre for Millimeter-wave Semiconductor Devices & Systems (CMSDS), India. She is presently working as a ‘DRDO- Research Associate’ at CMSDS, IRPE, University of Calcutta. Her research interest is focused on the modeling/simulation and fabrication of Millimeter and Sub-millimeter (Terahertz) wave high power homo-junction/hetero-junction devices based on wide-band-gap semiconductors, photo-irradiation effects on the high power Terahertz IMPATT oscillators, nano-scale THz devices and Microwave photonics. She published more than 85 peer-reviewed research papers on semiconductor devices in reputed International refereed journals and reviewed IEEE-Proceedings. She is the author of a book on “Fundamentals of Engineering Physics”, a number of international book-chapters and worked as a Chief Editor and editor in a number of reputed international journals and publications in India and abroad. Dr. Mukherjee obtained “National Merit Scholarship’, from Govt. of India, received “Top 100 Scientists-2009” award, “Woman of the Year-2010” award by ABI, Cambridge, UK and her biography is included in the “2000 outstanding Intellectuals of the 21st Century- 5th Edition – 2009-2010. Her biography is also published in the 26th and 27th editions of “Marquis Who’s Who in the World” -2009 and 2010 (NJ: USA) and “Marquis Who’s Who in Science & Engineering-2011”. She received “IEEE Best Paper Award” two times in 2009 and 2010 and is a member of IEEE (USA), IEEE-ED society (USA), IEEE-MTTs (USA) and Indian Science Congress.

2books edited

2chapters authored

Latest work with IntechOpen by Moumita Mukherjee

Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the “materials” aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

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