Press pack insulated gated bipolar transistors (PP IGBTs) have been gradually used in the high-voltage and high-power-density applications, such as the power system and electric locomotive, with its advantages of double-sided cooling, higher power density, and easy to connect in series compared with traditional wire-bonded power IGBT modules. However, the clamping force is quite important for PP IGBTs because too much clamping fore will cause mechanical damage to the silicon chips and too little clamping force will increase the junction temperature of the silicon chips due to the increased thermal contact resistance. And eventually it leads to thermal damage. Furthermore, the clamping force distribution within PP IGBTs is affected by many factors, and they can be divided into the internal and external factors. The finite element analysis model of the PP IGBTs is established based on the theory of elastic mechanics to obtain the influence of the affect factors, including the external clamping modes, spring design, thermal stress, the machining accuracy, and so on. The contribution of those affect factors to the clamping force distribution is ranked, and this can be a guideline not only for users but also for the manufacturers.
Part of the book: Design, Simulation and Construction of Field Effect Transistors