Dmitry Milovzorov

By Dmitry E. Milovzorov

Local electric fields appeared in dielectric and semiconductors due to the destruction of symmetry, creating the vacancies, point defects, and chemical impurities in material. By increasing external electric field value, numerous structural changes will be generated. Point defects in silicon films were characterized by using electron-paramagnetic resonance spectroscopy and laser picosecond spectroscopy. EPR spectroscopy provides the detailed microscopic information about the point defects in silicon films, which have unpaired electrons. The switching effect for A or (VO)− defects was observed by applied bias voltage for nanocrystalline silicon films. The intensities of EPR signal change according to the switching of position of oxygen incorporated in silicon (111) from one pair of silicon atom to another pair of silicon atoms. In this case, the interaction between px orbital is changed to pz orbital. The proposed mechanism of states’ switching for the vacancy (VO)− is based on a model of coupled dangling bonds (DBs) of silicon atoms and interaction between atomic orbitals. The crystal phase destruction in nanocrystalline silicon film by applying external electric field was investigated by Raman spectroscopy. The possible mechanism of phase creation was proposed.

Part of the book: Electric Field

By Dmitry E. Milovzorov

Local electric fields are appeared in dielectric and semiconductors due to the destruction of symmetry, creating the vacancies, point defects and chemical impurities in material. By increasing in external electric field value there are numerous structural changes will be generated. Point defects in silicon films were characterized by using electron-paramagnetic resonance spectroscopy and laser picoseconds spectroscopy. Chemical bonding properties was investigated by means of Fourier-transformed infrared spectroscopy. The possible mechanism of phase destruction was proposed.

Part of the book: Electric Field