Yao-Feng Chang

The University of Texas at AustinUnited States of America

I am a R&D Emerging Memory Cell Engineer at Micron Technology Inc.. I received the B.S. degrees in electrical engineering from National Sun Yat-sen University in 2007; the M.S. degree in Electronics Engineering from National Chiao Tung University in 2009; and the PhD degree in the Department of Electrical and Computer Engineering from The University of Texas at Austin in 2015. From 2011 to 2012, I was an intern at the SEMATECH, Austin, in the ReRAM Program, and worked on reliability testing and modeling. From 2013 to 2014, I was a research scientist at the PrivaTran (a build-up company). I have published over 30 journal publications and 25 conference proceedings and has been awarded numerous research awards and one patents. At the University of Texas at Austin, I continue to focus on the topics of current research on resistive switching memory used in next generation non-volatile memory application and tunneling FET or III-V MOSFETs of steep slope devices.

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