Md. Kawsar Alam

Bangladesh University of Engineering and Technology Bangladesh

Dr. Md. Kawsar Alam obtained his PhD in Electrical and Computer Engineering from The University of British Columbia, Canada in 2011. He is currently a Professor with the department of Electrical and Electronic Engineering at Bangladesh University of Engineering and Technology. His research interest includes Materials Science, Nanoscale Device Modeling and Simulation, Nano-Electro-Mechanical Systems (NEMS), Photovoltaic Devices, Ab-initio Modeling and Simulation, Molecular Dynamics, Charged Particle Interaction with Nano-materials, Electron Emission Properties of Nanostructures, and Monte Carlo Simulation. He has authored more than 60 scientific articles and leads the Nanoscale Science and Technology Research Group.

1books edited

2chapters authored

Latest work with IntechOpen by Md. Kawsar Alam

Materials properties, whether microscopic or macroscopic, are of immense interest to the materials scientists, physicists, chemists as well as to engineers. Investigation of such properties, theoretically and experimentally, has been one of the fundamental research directions for many years that has also resulted in the discovery of many novel materials. It is also equally important to correctly model and measure these materials properties. Keeping such interests of research communities in mind, this book has been written on the properties of polyesters, varistor ceramics, and powdered porous compacts and also covers some measurement and parameter extraction methods for dielectric materials. Four contributed chapters and an introductory chapter from the editor explain each class of materials with practical examples.

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Electrical and Electronic Properties of Materials

Edited by Md. Kawsar Alam

Chapters authored

High Electron Mobility Transistors: Performance Analysis, Research Trend and Applications

By Muhammad Navid Anjum Aadit, Sharadindu Gopal Kirtania, Farhana Afrin, Md. Kawsar Alam and Quazi Deen Mohd Khosru

In recent years, high electron mobility transistors (HEMTs) have received extensive attention for their superior electron transport ensuring high speed and high power applications. HEMT devices are competing with and replacing traditional field‐effect transistors (FETs) with excellent performance at high frequency, improved power density and satisfactory efficiency. This chapter provides readers with an overview of the performance of some popular and mostly used HEMT devices. The chapter proceeds with different structures of HEMT followed by working principle with graphical illustrations. Device performance is discussed based on existing literature including both analytical and numerical models. Furthermore, some notable latest research works on HEMT devices have been brought into attention followed by prediction of future trends. Comprehensive knowledge of up‐to‐date results, future directions, and their analysis methodology would be helpful in designing novel HEMT devices.

Part of the book: Different Types of Field-Effect Transistors

Introductory Chapter: Electrical and Electronic Properties of Materials

By Md. Kawsar Alam

Part of the book: Electrical and Electronic Properties of Materials

Md. Kawsar Alam

Latest work with IntechOpen by Md. Kawsar Alam

Electrical and Electronic Properties of Materials

Chapters authored

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