The effect of (10–25) MeV electron irradiation on Si‐SiO2 structures implanted with different ions (Ar, Si, O, B, and P) has been investigated by different methods, such as deep‐level transient spectroscopy (DLTS), thermo‐stimulated current (TSCM), Rutherford backscattering (RBS), and soft X‐ray emission spectroscopy (SXES). It has been shown that in double‐treated Si‐SiO2 structures, the defect generation by high‐energy electrons depends significantly on the location of preliminary implanted ions relative to the Si‐SiO2 interface as well as on the type (n‐ or p‐Si) of silicon wafer. SiO2 surface roughness changes, induced by ion implantation and high‐energy electron irradiation of Si‐SiO2 structures, are observed by the atomic force microscopy (AFM). Si nanoclusters in SiO2 of ion‐implanted Si‐SiO2 structures generated by MeV electron irradiation is also discussed.
Part of the book: Ion Implantation