I am Ravindiran working as Associate professor with Saveetha University. I am currently working on Photovoltaic and group III-V Transistor research. At the moment i am working on DFT based calculation for the atomistic device modelling.
High electron mobility transistor (HEMT) is the futuristic development of the transistor in migration of the nm technology for integration of many devices in a single chip. Moving beyond the silicon‐based devices to reach out the bottlenecks in the scaling and sizing of transistors has become an interesting topic of research. This research area includes the novel approach towards new materials and device structures. Materials focus is on composites made of binary, ternary and quaternary elements. Nanostructures made of two‐dimensional electron gas (2DEG), quantum well and tunnel barrier make the electron transport in devices interesting. A similar approach is adopted in the present work to make the device more suitable for faster device operation with high frequency.
Part of the book: Different Types of Field-Effect Transistors