Yogesh Kumar Sharma

Dr. Yogesh Sharma was born in Himachal, India, in 1983. He received the B.Sc. degree from Himachal Pradesh University, India in 2002 and the M.Sc degree in Physics from Punjab University, Chandigarh, India in 2004. Following this, he had worked as a lecturer for three years in a college, teaching mathematics and physics courses. Later, he moved to the USA to pursue his Ph.D in 2007. He started his integrated Ph.D. program at Auburn University, AL, US in wide band gap semiconductor technology, SiC and GaN. He completed his second Masters degree in applied physics in 2009 and Ph.D. degree in 2012. During his Masters he worked on GaN Schottky diodes and AlGaN/GaN HEMTs for bio sensing applications and later he focused on SiC devices for his Ph.D. His Ph.D work was to improve the SiO2/4H-SiC interface, which is crucial for SiC MOS technology advancement. He worked on two projects - thin PSG and nitrogen plasma to improve the interface, and successful execution of these projects resulted in peer-reviewed journal papers and presentations and invited talks at various international conferences. Immediately after finishing his Ph.D. in Dec 2012 he moved to University of Warwick, Coventry, U.K. as a Research Fellow and continued working on SiC technology. At Warwick University he was involved with two EPSRC funded projects - the development of 600 V–1200 V 3C-SiC power devices, and 10 kV MOSFETs on 4H-SiC for high power applications. Currently, he is based as a Principal SiC engineer at Dynex Semiconductor in the R&D department. He is responsible for all the SiC activities here at Dynex. In addition to that he is actively involved with UK government funded TSB (Technology Strategy Board) projects as well. He has been working on two TSB projects - SiCER and TraSiCa. He has authored/co-authored over 50 technical/conference papers. He is the holder of one patent and acted as a reviewer for IEEE Transactions on Power Electronics, Solid State Electronics, IEEE Electronic Device Letters, Electronics, Materials and the Materials Research Society. He is a member of IEEE and IET.

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Latest work with IntechOpen by Yogesh Kumar Sharma

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

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