Graphene, the atomically thin sheet of sp2 hybridized carbon atoms arranged in honeycomb structure, is becoming the forefront of material research. The chemical vapor deposition (CVD) process has been explored significantly to synthesis large size single crystals and uniform films of monolayer and bilayer graphene. In this prospect, the nucleation and growth mechanism of graphene on a catalytic substrate play the fundamental role on the control growth of layers and large domain. The transition metals and their alloys have been recognized as the active catalyst for growth of monolayer and bilayer graphene, where the surface composition of such catalysts also plays critical role on graphene growth. CVD-synthesized graphene has been integrated with bulk semiconductors such as Si and GaN for the fabrication of solar cells, photodetectors, and light-emitting diodes. Furthermore, CVD graphene has been integrated with hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) for the fabrication of van der Waals heterostructure for nanoelectronic, optoelectronic, energy devices, and other emerging technologies. The fundamental of the graphene growth process by a CVD technique and various emerging applications in heterostructure devices is discussed in detail.
Part of the book: Graphene Materials