The chapter deals with the synthesis of graphene on metal/SiC substrates. The graphene synthesis is pursued at a relatively low temperature. The method can be used for the graphene transfer from SiC to dielectric materials. Annealing of the structure results in a chemical reaction of a metal with SiC forming silicides and carbon-rich products at the boundary between metal and silicon carbide. Carbon atoms segregate at the top of metal/metal silicide layer during the cooling period of the process. The chapter is divided into the following sections: Introduction, Structure preparation, Graphene preparation from the structure Ni/SiC, Graphene preparation from the structure Co/SiC, Application of other metals, Influence of additive materials, and Conclusion.
Part of the book: Graphene Materials