Among other materials, the p-type Cu(In,Ga)Se2 (CIGS) alloy has attracted attention as the most efficient absorber in thin-film solar cells. The typical CIGS layer is deposited with a polycrystalline structure containing an amount of native defect states, which serve as carrier traps and recombination centers. These defect states in the CIGS layer can be easily changed after deposition of an n-type buffer layer, due to the formation of p-n junctions. To understand the influence of the p-n junction on these defect states, the behavior of photoexcited carriers, from the CIGS absorber to the buffer layer, is considered to be an important issue and is closely related to solar cell performance. In this study, we performed experiments to investigate the ultrafast carrier dynamics of CIGS-based solar cells, using optical pump terahertz (THz) probe (OPTP) spectroscopy, and demonstrated the correlation between solar cell performance and the behavior of photoexcited carrier dynamics.
Part of the book: Terahertz Spectroscopy