Dr. Boualem Djezzar, PhD, received the Diplôme des Etudes Supérieures (DES) in solid-state physics from the Uty of Constantine, Algeria; the Diplôme des Etudes Approfondies (DEA) in microelectronics from Uty of Grenoble, France; the MSc degree in thin film from Uty of Algiers, Algeria; and the PhD degree in microelectronics from Uty of Boumerdès, Algeria. He is currently affiliated with CDTA research center. He is the team leader of the semiconductor component reliability group. His current research interests include CMOS technology reliability, especially electrical characterization and modeling of radiation and NBTI effects. He is the author and coauthor of more than 70 papers published in refereed journals and refereed conference proceedings on characterization, modeling, and simulation of MOS device reliability.