Yasuto Hijikata

Saitama University Japan

Dr. Yasuto Hijikata is an associate professor of electrical and electronics systems engineering in Saitama University, Saitama, Japan, where he has taught for 13 years. He was born in Tokyo on April 1971 and received his doctor degree of engineering in light-wave sensing technology from Tokyo Institute of Technology in 1999. After that he arrived at Saitama University as an assistant professor. He was previously in the national research institute (CNR) in Italy as a guest researcher from October 2005 to March 2006. He has been the current position since 2006. Dr. Hijikata has been interest in characterizations of surfaces and interfaces of SiC semiconductor material for its device applications, especially on characterizations and processing of MOS interfaces as well as on the oxidation mechanism of SiC.

1books edited

3chapters authored

Latest work with IntechOpen by Yasuto Hijikata

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

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