Electronic devices are strongly influenced by their microstructures. In situ transmission electron microscopy (in situ TEM) with capability to measure electrical properties is an effective method to dynamically correlate electric properties with microstructures. We have developed tools and in situ TEM experimental procedures for measuring electronic devices, including TEM sample holders and sample preparation methods. The method was used to study metallic nanowire by electromigration, magnetoresistance of a ferromagnetic device, conductance quantization of a metallic nanowire, single electron tunnelling, and operation details of resistive random access memories (ReRAM).
Part of the book: The Transmission Electron Microscope