Part of the book: Properties and Applications of Silicon Carbide
Part of the book: Physics and Technology of Silicon Carbide Devices
A method of in situ observation using langasite crystal microbalance (LCM) is described for chemical vapour deposition (CVD). First, the frequency behaviour of the LCM is expressed using the equation having the optimized coefficients in a wide range of gas-phase conditions for the CVD. Next, by the LCM frequency behaviour, the existence of surface chemical reactions in a CVD reactor is determined. Additionally, the LCM can determine the lowest temperature for initiating the film deposition. In the last part, the temperature change related to the film formation process is described.
Part of the book: Chemical Vapor Deposition
Cost-effective and mass production of size-controlled wafers becomes one of the future trends for electronic devices. Herein, we design a Minimal Fab system for the growth of half-inch-diameter silicon wafer devices. Different from the conventional chemical vapour deposition (CVD) systems, a new-type of CVD reactor was designed and developed for the Minimal Fab. The minimal CVD reactor has a small reaction chamber for rapid growth processes. It employed (i) a vertical gas flow, (ii) heating modules using concentrated infrared light, (iii) chlorine trifluoride gas for quick reactor cleaning and (iv) optimized epitaxial growth conditions so that the reactor cleaning is not necessary. Reducing the total gas flow rate is an effective way to increase the wafer temperature. The heating process was further assisted by the absorption of infrared light by the precursor trichlorosilane. The slimly designed reflector could help in improving the heating speed.
Part of the book: Epitaxy