For the next-generation nonvolatile memory material, the most promising candidate is resistive random access memory (RRAM) which is nonvolatile memory with high density, high speed, and low power consumption. Resistive switching (RS) behavior had been reported in various films including transition metal oxides, perovskite, and chalcogenide. For further application, it is still a challenge to fabricate nanostructures of RS material. Micro-fabrication method involves traditional lithography, chemical etching, electron beam direct writing, nano-imprint, and so on. However, the procedure and the cost of these methods are relatively complex and high for semiconductors process. In this chapter, we demonstrate a method for fabricating sub-micro ZrO2 lattice by using sol-gel method combined with laser interference lithography and micro-analysis with high-resolution transmission electron microscopy (HRTEM).
Part of the book: The Transmission Electron Microscope