Vitalyi Igorevich Talanin

professor, vice-chief of dept.

Dr. V. I. Talanin was born in 1977 into a Russian noble family in Zaporozhye, USSR. He completed his MSc degree (2000) in Physics and Technology of Materials and Components in Electronic Technique, MSc degree (2006) in Software Engineering, and PhD degree (2002) in Physics of Semiconductors and Dielectrics. His PhD dissertation was on the mechanisms of grown-in microdefect formation in dislocation-free silicon single crystals. Dr. Talanin was an assistant professor (2002–2003) and an associate professor (2003–2006) and is a full professor (since 2006). Since 2012, he has been working as the full professor and vice chief of Computer Science and Software Engineering Department at the Zaporozhye Institute of Economics and Information Technologies. Dr. Talanin was awarded a scholarship at the Ukraine Ministry Cabinet (2002–2003) and President Grant for Scientific Researches (2007, 2008). He was awarded the title Doctor of Science, honoris causa (2012), and Full Professor (2013) at the Russian Academy of Natural History. Dr. Talanin has published extensively in material science and semiconductor physics and also in Russian history and genealogy (as hobbies). He has written 10 monographs and ca. 200 scientific papers. Dr. Talanin is a member of editorial board of the Journal of Crystallization Process and Technology (2011–present) and Journal of Science and Technology (2011–present). Dr. Talanin was a member of a program committee at the I (2013), II (2014), III (2015), and IV (2016) and is a member of a program committee at the V (2017) World Conference on Information Systems and Technologies. Dr. Talanin was a member of a Program Committee at the I (2015) and II (2016) International Conference on Semiconductor Physics and Devices.

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Latest work with IntechOpen by Vitalyi Igorevich Talanin

The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.

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