Vitalyi Igorevich Talanin

Khortytsia National Academy

Dr. V.I. Talanin was born into a Russian noble family in Zaporozhye (USSR). He completed a M.Sc. degree (2000) in Physics and Technology of Materials & Components in Electronic Technique, a M.Sc. degree (2006) in Software Engineering and a Ph.D. (2002) in Physics of Semiconductors and Dielectrics. His Ph.D. dissertation was on the mechanisms of grown-in microdefects formation in dislocation-free silicon single crystals. Since 2012 to 2019 he was the Full Professor and Vice-Chief of Computer Science & Software Engineering Dept. at the Institute of Economics & Information Technologies (Zaporozhye, Ukraine). Since 2019 he is the Full Professor and Scientific Concultant at the Khortytsia National Academy (Zaporozhye, Ukraine). Dr. Talanin was awarded a Scholarship at the Ukraine Ministry Cabinet (2002-2003) and President Grant for Scientific Researches (2007, 2008). He was awarded the title Doctor of Science, honoris causa (2012) and the title Full Professor (2013). Dr. Talanin has published extensively in material science & semiconductor physics and also in history & genealogy (as hobbies). He has written 13 monographs and ca. 200 scientific papers. Since 2018 Dr. Talanin is a Member of an International Union of Crystallography (IUCr). Dr. Talanin is a Member of Editorial Board of some scientific journals. Dr. Talanin was a Member of a Program Committee and Organizing Committee of many international conferences.

Vitalyi Igorevich Talanin

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Latest work with IntechOpen by Vitalyi Igorevich Talanin

The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.

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