Mariano Aceves-Mijares

By J.A. Luna-López, M. Aceves-Mijares, J. Carrillo-López, A. Morales-Sánchez, F. Flores-Gracia and D.E. Vázquez Valerdi

Part of the book: Photodetectors

By Rosa López-Estopier, Mariano Aceves-Mijares and Ciro Falcony

Part of the book: Cathodoluminescence

By J. Alarcón-Salazar, R. López-Estopier, E. Quiroga-González, A. Morales-Sánchez, J. Pedraza-Chávez, I. E. Zaldívar-Huerta and M. Aceves-Mijares

Off stoichiometric silicon oxide, also known as silicon-rich oxide (SRO), is a light-emitting material that is compatible with silicon technology; therefore, it is a good candidate to be used as a light source in all-silicon optoelectronic circuits. The SRO obtained by low-pressure chemical vapor deposition (LPCVD) has shown the best luminescent properties compared to other techniques. In spite of LPCVD being a simple technique, it is not a simple task to obtain SRO with exact silicon excess in a reliable and repetitive way. In this work, the expertise obtained in our group to obtain SRO by LPCVD with precise variation is presented. Also, the characteristics of this SRO obtained in our group are revised and discussed. It is demonstrated that LPCVD is an excellent technique to obtain single layers and multilayers of nanometric single layers with good characteristics.

Part of the book: Chemical Vapor Deposition

By Santiago A. Cabañas-Tay, Liliana Palacios-Huerta, Mariano Aceves- Mijares, Antonio Coyopol, Sergio A. Pérez-García, Liliana Licea- Jiménez, Carlos Domínguez and Alfredo Morales-Sánchez

Luminescent silicon‐rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon‐rich nitride (SRN) and silicon‐rich oxide (SRO) films have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO films deposited by low‐pressure chemical vapor deposition are reviewed and discussed. SRN and SRO films, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emitting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO films as the dielectric layer. SRN‐LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO‐LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO‐LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

Part of the book: Luminescence

By Jesús Alarcón-Salazar, Liliana Palacios-Huerta, Alfredo Abelardo González-Fernández, Alfredo Morales-Sánchez and Mariano Aceves-Mijares

On the road to integrated optical circuits, the light emitting device is considered the bottleneck preventing us from arriving to the fully monolithic photonic system. While the development of silicon photonics keeps building momentum, the indirect bandgap nature of silicon represents a major problem for obtaining an integrated light source. Novel nanostructured materials based on silicon, such as silicon-rich oxide (SRO) containing silicon nanoparticles, present intense luminescence due to quantum phenomena. Using this material, electroluminescent devices have already been fabricated and even integrated in monolithic photonic circuits by fully complementary metal oxide semiconductor (CMOS) compatible techniques, opening the door to seamless electronic and photonic integration. The present work discusses some of the strategies used to improve the performance of SRO-based electroluminescent devices fully compatible with CMOS technology. Results from the characterization of devices obtained using different approaches are presented and compared.

Part of the book: Recent Development in Optoelectronic Devices