Comparison of Dielectric and Piezoelectric properties between Soft and Hard Piezoelectric Materials.
\r\n\tAnimal food additives are products used in animal nutrition for purposes of improving the quality of feed or to improve the animal’s performance and health. Other additives can be used to enhance digestibility or even flavour of feed materials. In addition, feed additives are known which improve the quality of compound feed production; consequently e.g. they improve the quality of the granulated mixed diet.
\r\n\r\n\tGenerally feed additives could be divided into five groups:
\r\n\t1.Technological additives which influence the technological aspects of the diet to improve its handling or hygiene characteristics.
\r\n\t2. Sensory additives which improve the palatability of a diet by stimulating appetite, usually through the effect these products have on the flavour or colour.
\r\n\t3. Nutritional additives, such additives are specific nutrient(s) required by the animal for optimal production.
\r\n\t4.Zootechnical additives which improve the nutrient status of the animal, not by providing specific nutrients, but by enabling more efficient use of the nutrients present in the diet, in other words, it increases the efficiency of production.
\r\n\t5. In poultry nutrition: Coccidiostats and Histomonostats which widely used to control intestinal health of poultry through direct effects on the parasitic organism concerned.
\r\n\tThe aim of the book is to present the impact of the most important feed additives on the animal production, to demonstrate their mode of action, to show their effect on intermediate metabolism and heath status of livestock and to suggest how to use the different feed additives in animal nutrition to produce high quality and safety animal origin foodstuffs for human consumer.
",isbn:"978-1-83969-404-2",printIsbn:"978-1-83969-403-5",pdfIsbn:"978-1-83969-405-9",doi:null,price:0,priceEur:0,priceUsd:0,slug:null,numberOfPages:0,isOpenForSubmission:!1,hash:"8ffe43a82ac48b309abc3632bbf3efd0",bookSignature:"Prof. László Babinszky",publishedDate:null,coverURL:"https://cdn.intechopen.com/books/images_new/10496.jpg",keywords:"Technological Feed Additives, Feed Industry, Quality of Compound Feed, Non-Antibiotic Growth Promoter, Product Quality, Additive Enzymes, Digestibility of Nutrients, NSP Enzymes, Farm Animals, Livestock, Immunity, Microbiome",numberOfDownloads:null,numberOfWosCitations:0,numberOfCrossrefCitations:null,numberOfDimensionsCitations:null,numberOfTotalCitations:null,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"November 24th 2020",dateEndSecondStepPublish:"December 22nd 2020",dateEndThirdStepPublish:"February 20th 2021",dateEndFourthStepPublish:"May 11th 2021",dateEndFifthStepPublish:"July 10th 2021",remainingDaysToSecondStep:"2 months",secondStepPassed:!0,currentStepOfPublishingProcess:4,editedByType:null,kuFlag:!1,biosketch:"Professor Emeritus from the University of Debrecen, Hungary who authored 297 publications (papers, book chapters) and edited 3 books. Member of various committees and chairman of the World Conference of Innovative Animal Nutrition and Feeding (WIANF).",coeditorOneBiosketch:null,coeditorTwoBiosketch:null,coeditorThreeBiosketch:null,coeditorFourBiosketch:null,coeditorFiveBiosketch:null,editors:[{id:"53998",title:"Prof.",name:"László",middleName:null,surname:"Babinszky",slug:"laszlo-babinszky",fullName:"László Babinszky",profilePictureURL:"https://mts.intechopen.com/storage/users/53998/images/system/53998.jpg",biography:"László Babinszky is Professor Emeritus of animal nutrition at the University of Debrecen, Hungary. From 1984 to 1985 he worked at the Agricultural University in Wageningen and in the Institute for Livestock Feeding and Nutrition in Lelystad (the Netherlands). He also worked at the Agricultural University of Vienna in the Institute for Animal Breeding and Nutrition (Austria) and in the Oscar Kellner Research Institute in Rostock (Germany). From 1988 to 1992, he worked in the Department of Animal Nutrition (Agricultural University in Wageningen). In 1992 he obtained a PhD degree in animal nutrition from the University of Wageningen.He has authored 297 publications (papers, book chapters). He edited 3 books and 14 international conference proceedings. His total number of citation is 407. \r\nHe is member of various committees e.g.: American Society of Animal Science (ASAS, USA); the editorial board of the Acta Agriculturae Scandinavica, Section A- Animal Science (Norway); KRMIVA, Journal of Animal Nutrition (Croatia), Austin Food Sciences (NJ, USA), E-Cronicon Nutrition (UK), SciTz Nutrition and Food Science (DE, USA), Journal of Medical Chemistry and Toxicology (NJ, USA), Current Research in Food Technology and Nutritional Sciences (USA). From 2015 he has been appointed chairman of World Conference of Innovative Animal Nutrition and Feeding (WIANF).\r\nHis main research areas are related to pig and poultry nutrition: elimination of harmful effects of heat stress by nutrition tools, energy- amino acid metabolism in livestock, relationship between animal nutrition and quality of animal food products (meat).",institutionString:"University of Debrecen",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"1",totalChapterViews:"0",totalEditedBooks:"0",institution:{name:"University of Debrecen",institutionURL:null,country:{name:"Hungary"}}}],coeditorOne:null,coeditorTwo:null,coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"25",title:"Veterinary Medicine and Science",slug:"veterinary-medicine-and-science"}],chapters:null,productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},personalPublishingAssistant:{id:"185543",firstName:"Maja",lastName:"Bozicevic",middleName:null,title:"Ms.",imageUrl:"https://mts.intechopen.com/storage/users/185543/images/4748_n.jpeg",email:"maja.b@intechopen.com",biography:"As an Author Service Manager my responsibilities include monitoring and facilitating all publishing activities for authors and editors. From chapter submission and review, to approval and revision, copyediting and design, until final publication, I work closely with authors and editors to ensure a simple and easy publishing process. I maintain constant and effective communication with authors, editors and reviewers, which allows for a level of personal support that enables contributors to fully commit and concentrate on the chapters they are writing, editing, or reviewing. I assist authors in the preparation of their full chapter submissions and track important deadlines and ensure they are met. I help to coordinate internal processes such as linguistic review, and monitor the technical aspects of the process. As an ASM I am also involved in the acquisition of editors. Whether that be identifying an exceptional author and proposing an editorship collaboration, or contacting researchers who would like the opportunity to work with IntechOpen, I establish and help manage author and editor acquisition and contact."}},relatedBooks:[{type:"book",id:"7144",title:"Veterinary Anatomy and Physiology",subtitle:null,isOpenForSubmission:!1,hash:"75cdacb570e0e6d15a5f6e69640d87c9",slug:"veterinary-anatomy-and-physiology",bookSignature:"Catrin Sian Rutland and Valentina Kubale",coverURL:"https://cdn.intechopen.com/books/images_new/7144.jpg",editedByType:"Edited by",editors:[{id:"202192",title:"Dr.",name:"Catrin",surname:"Rutland",slug:"catrin-rutland",fullName:"Catrin Rutland"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"1591",title:"Infrared Spectroscopy",subtitle:"Materials Science, Engineering and Technology",isOpenForSubmission:!1,hash:"99b4b7b71a8caeb693ed762b40b017f4",slug:"infrared-spectroscopy-materials-science-engineering-and-technology",bookSignature:"Theophile Theophanides",coverURL:"https://cdn.intechopen.com/books/images_new/1591.jpg",editedByType:"Edited by",editors:[{id:"37194",title:"Dr.",name:"Theophanides",surname:"Theophile",slug:"theophanides-theophile",fullName:"Theophanides Theophile"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"3092",title:"Anopheles mosquitoes",subtitle:"New insights into malaria vectors",isOpenForSubmission:!1,hash:"c9e622485316d5e296288bf24d2b0d64",slug:"anopheles-mosquitoes-new-insights-into-malaria-vectors",bookSignature:"Sylvie Manguin",coverURL:"https://cdn.intechopen.com/books/images_new/3092.jpg",editedByType:"Edited by",editors:[{id:"50017",title:"Prof.",name:"Sylvie",surname:"Manguin",slug:"sylvie-manguin",fullName:"Sylvie Manguin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"3161",title:"Frontiers in Guided Wave Optics and Optoelectronics",subtitle:null,isOpenForSubmission:!1,hash:"deb44e9c99f82bbce1083abea743146c",slug:"frontiers-in-guided-wave-optics-and-optoelectronics",bookSignature:"Bishnu Pal",coverURL:"https://cdn.intechopen.com/books/images_new/3161.jpg",editedByType:"Edited by",editors:[{id:"4782",title:"Prof.",name:"Bishnu",surname:"Pal",slug:"bishnu-pal",fullName:"Bishnu Pal"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"72",title:"Ionic Liquids",subtitle:"Theory, Properties, New Approaches",isOpenForSubmission:!1,hash:"d94ffa3cfa10505e3b1d676d46fcd3f5",slug:"ionic-liquids-theory-properties-new-approaches",bookSignature:"Alexander Kokorin",coverURL:"https://cdn.intechopen.com/books/images_new/72.jpg",editedByType:"Edited by",editors:[{id:"19816",title:"Prof.",name:"Alexander",surname:"Kokorin",slug:"alexander-kokorin",fullName:"Alexander Kokorin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"1373",title:"Ionic Liquids",subtitle:"Applications and Perspectives",isOpenForSubmission:!1,hash:"5e9ae5ae9167cde4b344e499a792c41c",slug:"ionic-liquids-applications-and-perspectives",bookSignature:"Alexander Kokorin",coverURL:"https://cdn.intechopen.com/books/images_new/1373.jpg",editedByType:"Edited by",editors:[{id:"19816",title:"Prof.",name:"Alexander",surname:"Kokorin",slug:"alexander-kokorin",fullName:"Alexander Kokorin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"57",title:"Physics and Applications of Graphene",subtitle:"Experiments",isOpenForSubmission:!1,hash:"0e6622a71cf4f02f45bfdd5691e1189a",slug:"physics-and-applications-of-graphene-experiments",bookSignature:"Sergey Mikhailov",coverURL:"https://cdn.intechopen.com/books/images_new/57.jpg",editedByType:"Edited by",editors:[{id:"16042",title:"Dr.",name:"Sergey",surname:"Mikhailov",slug:"sergey-mikhailov",fullName:"Sergey Mikhailov"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"371",title:"Abiotic Stress in Plants",subtitle:"Mechanisms and Adaptations",isOpenForSubmission:!1,hash:"588466f487e307619849d72389178a74",slug:"abiotic-stress-in-plants-mechanisms-and-adaptations",bookSignature:"Arun Shanker and B. Venkateswarlu",coverURL:"https://cdn.intechopen.com/books/images_new/371.jpg",editedByType:"Edited by",editors:[{id:"58592",title:"Dr.",name:"Arun",surname:"Shanker",slug:"arun-shanker",fullName:"Arun Shanker"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"878",title:"Phytochemicals",subtitle:"A Global Perspective of Their Role in Nutrition and Health",isOpenForSubmission:!1,hash:"ec77671f63975ef2d16192897deb6835",slug:"phytochemicals-a-global-perspective-of-their-role-in-nutrition-and-health",bookSignature:"Venketeshwer Rao",coverURL:"https://cdn.intechopen.com/books/images_new/878.jpg",editedByType:"Edited by",editors:[{id:"82663",title:"Dr.",name:"Venketeshwer",surname:"Rao",slug:"venketeshwer-rao",fullName:"Venketeshwer Rao"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"4816",title:"Face Recognition",subtitle:null,isOpenForSubmission:!1,hash:"146063b5359146b7718ea86bad47c8eb",slug:"face_recognition",bookSignature:"Kresimir Delac and Mislav Grgic",coverURL:"https://cdn.intechopen.com/books/images_new/4816.jpg",editedByType:"Edited by",editors:[{id:"528",title:"Dr.",name:"Kresimir",surname:"Delac",slug:"kresimir-delac",fullName:"Kresimir Delac"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}]},chapter:{item:{type:"chapter",id:"16863",title:"Single Wall Carbon Nanotubes in the Presence of Vacancies and Related Energy Gaps",doi:"10.5772/22654",slug:"single-wall-carbon-nanotubes-in-the-presence-of-vacancies-and-related-energy-gaps",body:'Carbon nanotube family is one of the most important elements in nanotechnology. High ratio of surface to volume of nano materials cause to appear nanotechnology. This matter is one of the most important properties of produced materials at nano scales. At this scale, materials begin replace their bulky behavior with surface one. Some of physical relations that are used for ordinary materials, also abandoned. In fact, at this scale, laws of quantum physics play a key role and it will be possible to control special properties of material such as melting point, magnetic behavier, charge capacitance and even colour of material with no change in their chemical properties. This text is concentrated on some most important carbon nanotubes.
Carbon atoms can form chemical bonds by hybridizing the atomic orbitals of their valence bonds and assume many structural forms such as graphite, diamond, carbon fibers, fullerenes, and carbon nanotubes. Carbon nanotubes (CNTs) discovered by Sumio Iijima in 1991 [Iijima,1991], are one of the most exciting quasi-1-D solids that exhibit fascinating electrical, optical, and mechanical properties such as high current density, large mechanical stiffness, and field emission characteristics [Choi et al., 1999; Saito & Dresselhaus,1998]. These properties of CNTs enable a wide range of applications in the various fields such as electron emission [Bonard et al., 1999; Dresselhaus et al., 2001; Poole et al. 2003], energy storage [Meyyappan, 2005, Chambers et al., 1998], composites [Dresselhaus et al., 2001; Meyyappan, 2005], solar cells [Lee, 2005; Pradhan et al., 2006; Wei et al., 2007], nanoprobes and sensors [Dai et al., 1996], and biomedicine [Sinha et al., 2005].
A single-wall carbon nanotube (SWCNT) is a graphene sheet rolled into a cylindrical shape with a diameter of about 0.7 - 2.0 nm [Saito et al.,1998], but A multiwall carbon nanotube (MWCNT) comprises a number of graphene sheets rolled concentrically with an inner diameter of about 5 nm [Harris, 2005 ]. Since the aspect ratio of the carbon nanotube cylinders (length/diameter) is as large as 104-105 [Saito et al.,1998], these nanotubes can be considered as one-dimensional nanostructures.
CNTs according to their structures are classified to three types of armchair, zig zag, and chiral [Saito et al.,1998]. The terms ‘zigzag’ and ‘armchair’ refer to the arrangement of hexagons around the circumference. Armchair and zigzag nanotubes are defined by a carbon nanotube whose mirror image has an identical structure to the original one. On the contrary, Chiral nanotubes in which the hexagons are arranged helically around the tube axis, exhibit a spiral symmetry whose mirror image cannot be superposed on to the original one [Saito et al.,1998& Harris, 2009].
SWCNTs can be either metallic or semiconducting, depending on their diameter and chirality. All (n, n) armchair nanotubes yield 4n energy subbands with 2n conduction and 2n valence bands. All armchair nanotubes have a degenerated band between the highest valence band and the lowest conduction band, where the bands cross the Fermi level. Thus, all armchair nanotubes are expected to be metallic. For a general (n, 0) zigzag nanotube, if n is a multiple of 3, the nanotube becomes metallic as the energy gap at k=0 becomes zero; however, if n is not a multiple of 3, the nanotube becomes semiconducting because an energy gap which is proportional to the nanotube diameter opens at k=0 [Saito et al., 1998].
One of the important things which plays essential role on electronic properties, is the energy gap which can inform us about metallic and semi-metallic properties of nanotubes. Variety of probes predict that armchair single-wall carbon nanotubes are always metallic [Dresselhaus et al., 1996] and all the other tubes (zigzag and chiral), depend on whether they satisfy n-m=3I or not (where I is an integer), are metallic or semi-metallic [Wildöer et al., 1998]. In the pervious dedicates, some calculations and experiments have been focused on how we can change the electronic properties of SWCNTs for achieving new nanoelectronic [Andriotis & Menon,2007; Lee et al.,2007; Tans et al., 1998] and spintronic [Meyyappan, 2005, Chambers, 1998; Lee,2005, Pradhan and Batabyal, 2006] devices. Some of them have used the external fields such as electric, magnetic, and radiation fields. In these works, the Probes have demonstrated that the presence of a magnetic field perpendicular to the nanotube axis induces a metal-in, 2005, ulator transition for the metallic (9, 0), (12, 0)... nanotubes in the absence of disorder and semiconducting nanotubes can become metallic with increasing magnetic strength [Wei et al., 2007]. Some other works showed that for zigzag tubules (n, 0), the gap varies linearly with stress and independently of diameter, so a uniaxial-stress applied parallel to the axis of carbon nanotubes can significantly modify the band gap and induce a semiconductor-metal transition [Dai et al., 1996].
Some other investigations used structural defects such as substitutional disorders, vacancies, and adatoms on SWCNTs [Dresselhaus et al., 1996; Harris, 2005; Sinha et al., 2005]. Among the various kinds of structural defects in SWCNTs, effects of vacancies have been studied more recently [Wildöer, 1998]. Experimental observations showed that carbon atoms in carbon nanotubes can be released under electron or ion irradiation [Ajayan et al., 1998; Zhu et al., 1999] effectively, leaving vacancies in SWCNTs behind. Lately, Yan Li et al. have showed that by symmetry breaking in armchair carbon nanotubes, metal-semiconductor transition can be occurred. They estimate the band gap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations [Li et al., 2004].
In addition, the recent probes have illustrated that vacancies can change the electronic properties of SWCNTs, converting some metallic nanotubes to semiconductors and semiconducting ones into metals, also for most of SWCNTs, the electronic properties strongly depend on the configuration of vacancies [Yuchen et al., 2004]. The influence of vacancy defect density on electrical properties of armchair SWCNTs was investigated and the results showed that there is no simple correlation between mono-vacancy defect density and band gap [Tien et al., 2008].
Quite recently, by considering the vacancies as substitutional disorders we investigate effects of vacancy percentage on the energy gap of different zigzag SWCNTs, by using Green’s function technique and self-consistent coherent potential approximation (CPA) method [Faizabadi, 2009].
The electronic density of states (DOS) is the number of available electrons for a given energy interval. DOS of a crystalline solid, which dramatically depends on the dimension of the system, is fundamental in describing the electronic transport, electrical, optical, thermal, and mechanical properties of the solid [Lu, Pan, 2004, Zhu et al., 1933]. The density of states enters in the experimental study, the application of the electronic properties, and computation of some useful quantities of a system such as electrical resistance and conductance.The helicity or local symmetry of CNTs, along with the diameter which determines the size of the repeating structural unit introduces significant changes in the electronic density of states, and hence provides a unique electronic character for the nanotubes [Hansson et al., 2000]. The DOS of semiconducting carbon nanotubes near the Fermi level located at E=0 is zero, but the DOS of metallic nanotubes near the E=0 is non-zero. In addition, the DOS of zigzag and armchair carbon nanotubes shows van Hove singularities whose numbers are consistent with the number of hexagons around the circumference of the (n, m) nanotube.
Generally, three techniques are being used to produce carbon nanotubes including the electric arc discharge, the laser ablation, and the chemical vapor deposition (CVD). In each of techniques it is possible we have some vacancies in produced carbon nanotube structures. In the next sections, the method of evaluating the effects of vacancies in the DOS of these structures are discussed, here a brief explanation on Synthesis methods of carbon nanotubes is presented.
The electric arc discharge method as one of the first methods to produce CNTs, employs a chamber filled with an inert gas, two electrodes of pure graphite rods, and a DC power supply. A current of about 50–100A passed though the electrodes causes carbon atoms are vaporized from the graphite anode in the form of crystallites and are deposited on the cathode electrode in the form of small carbon clusters. Next, these carbon clusters rearrange themselves into a tubular shape forming the MWCNTs, which drift toward the cathode and deposit on its surface. MWNTs are obtained when a pure graphite target is used and SWNTs when the target is a mixture of graphite and metallic catalysts such as Ni-Co or Ni-Y mixtures. However a cylindrical and homogenous deposit forms on the cathode with a quite high rate, the presence of “unwanted” graphite crystallites that do not form into nanotubes is the limiting factor for high yield CNTs [Peter, Harris, 2009, Dervish et al., 2009].
The laser ablation or the evaporation method was introduced by Smalley and his coworkers in 1995. In this technique, a powerful laser is used to ablate a carbon target in an inert atmosphere at low pressure. The laser beam incident results in evaporating carbon from the graphite. The carrier gas sweeps the carbon atoms from the high-temperature zone to a cold copper collector on which they condense into nanotubes. In order to generate SWCNTs using the laser ablation technique, it is necessary to impregnate the graphite target with transition metal catalysts. It is experimentally found that the SWCNT growth time in this technique is only a few milliseconds long. Generally, along with SWCNTs and MWCNTs, fullerenes, amorphous carbon, and other carbon by-products are produced while using the laser ablation technique. MWCNTs produced by this method have a number of layers varying from 4 to 24 and an inner diameter ranging between 1.5 and 3.5nm. Unfortunately, the laser ablation methode is very expensive because it involves high-purity graphite rods and high power lasers [Dervish, 2009; Loiseau et al., 2006].
Chemical vapor deposition (CVD) is a relatively slow method that produces long CNTs quantities. In this method, CNTs are synthesized by taking hydrocarbons (the commonly used sources are methane, ethylene, and acetylene) and using an energy source, such as electron beam or resistive heating, to impart energy to them. At first, the energy source heats The hydrocarbon at high temperatures, typically between 700 and 1000 ˚C, in the presence of catalytic systems (usually a first-row transition metal such as Ni, Fe, or, Co) and breaks it into hydrogen and carbon. Then, carbon atoms dissolve and diffuse into the metal surface and rearrange themselves into a network containing hexagons of carbon atoms and finally precipitate out in the form of CNTs. Higher yields of MWCNTs and SWCNTs are produced when the catalytic system is composed of two different metals. CNTs produced with the CVD method can be scaled up for large scale and high-quality at a relatively low cost. In addition, the growth of CNTs can be controlled by adjusting the reaction parameters such as the catalyst system, temperature, type of hydrocarbon, and the flow rate of the gases. Another advantage of the CVD method is that it enables the deposition of CNTs on pre-designed lithographic structures, producing ordered arrays of CNTs [Dervish, 2009].
In 1963, Davis, Langer and Klauder introduced the coherent potential approximation to solve the single-site scattering problem [Yoyozawa,1968]. Then, several authors [Onodera & Yoyozawa, 1968; Soven 1960] used it to calculate DOS in a disordered substitutional alloy in which random elements have short-range potential. In this approximation, random disordered system would be replaced by an effective ordered system which is chosen so that the average of the scattering amplitudes for the actual atoms placed in the effective medium vanishes. Besides, according to this theory, the behavior of a single site or cell specifies the manner of the whole system.
To calculate the averaged Green’s function, the single electron Green’s function can be expressed as follows,
here H is the Hamiltonian of the system. In order to use the multiple scattering theory, H is better to divide into the unperturbed or reference Hamiltonian K and the perturbation term v as,
Also, the reference Green’s function P is written as,
Using P, the t scattering matrix associated with the atom n in the effective medium becomes,
Next, the average of the total scattering matrix T related to the G given by
Can be expressed as
On the other hand, the effective Hamiltonian can be defined as,
Within the single site approximation, the condition of
The single-wall carbon nanotube in tight bonding model is described by [Economou, 2006, Heyd, 1997],
where α and β refer to the A or B sublattices, εiα refer to on-site energies, and γi,jαβ is the hopping integral between sites i and j in A or B sublattices. Since we consider the nearest neighbor interaction, the hopping integrals γi,jAA and γi,jBB take zero values while the off-diagonal hopping integrals, γi,jAB and γi,jBA, take a constant value γ0. The on-site energies associated with the two different sites A and B of a graphene sheet have the same values. We neglect the effect of wall curvature in Hamiltonian. The complete set of
Here, we just consider the electronic properties of π- bonds since every carbon atom has four valance electrons, one 2s electron and three 2p electrons and the overlap between the pz wave function with the s or the px and py electrons is strictly zero, we can treat the pz electrons, form π-bonds of graphene, independently of the other valance electrons. There are also some high symmetric points in Brillouin zone which are located near the Fermi level, so many of the electronic properties of SWCNTs are related to this bonds [Wallace, 1972]. The associated Green’s function operator can be described as [Economou, 2006],
So the local density of states can be written as
where m, the number of allowed band, is obtained by the half number of at0oms in the first Brillouin zone and s is an infinitesimal number for convergence. We present a schematic plot of our system which is a typical zigzag SWCNT in the presence of vacancies as substitutional disorders in Fig. 1.
The schematic plot of zigzag single-wall carbon nanotube with random vacancies
On the other hand, we suppose in the presence of vacancies the structure remain the same as in the absence of them except that some carbon atoms are replaced by holes.
By considering this assumption, in order to investigate effects of vacancy percentage on density of states of SWCNTs, we use coherent potential approximation. As mentioned before, in CPA, the Green’s function for a system of scatterers can be written in operator notation as [Györffy, 1972; Korringa & Mills, 1972]:
where
where Tik is the scattering-path operator which have been introduced by Györffy for the first time and ti is the t matrix that describes the scattering from the potential on the i-th site which can be written as,
Here, Vi is the extra potential that is caused the scattering i-th site with respect to an effective medium. The effective medium is introduced by the self energy ξ which can be determined by T = 0. Using the CPA, we impose the condition that for any site ti = 0 which means the extra effective scattering due to the atom at site i vanishes and the following self-consistent equations can be achieved [Datta & Thakur, 1994],
and
where εc is the on-site energy of carbon atoms, η is the vacancy percentage, and ξ(m) is the self-energy.
By using the method described above, we investigate the density of states of zigzag (12, 0) SWCNT. All calculations are performed at zero temperature and we use εc= 1 eV and γ0= 2.75 eV. The density of states of (12, 0) SWCNT as a function of energy in units of γ0 are depicted in Fig. 2 for η = 0. The energy gap of (12, 0) SWCNT in the absence of vacancy, η = 0, is Eg= 0.02 eV that is in agreement with local density approximation (LDA) calculations [Miyake & Saito,1998]. Saito et al. showed that by just using the π tight-binding method there is no gap in the band structure, but this is not shown in our calculations. The associated experimental probes showed that the energy gap of (12, 0) SWCNT is 0.04±0.004 eV [Ouyang et al., 2001]. The energy gap of three zigzag SWCNTs is compared in Table 1. In regard to Table 1, by increasing SWCNT’s index or increasing the diameter of SWCNTs, our results approach to the experimental results of Min Ouyang et al. The difference is as a result of neglecting the effect of wall curvature in Hamiltonian as mentioned before.
Comparison between our computational energy gaps with experimental energy gaps from Ref. [Ouyang et al., 2001].
Density of states for a pure (12, 0) SWCNT
Density of states for (12, 0) SWCNT in the presence of vacancy for η = 0.1(Solid line), η = 0.3 (Dot line).
The band gap opening is occurred, as it is depicted in Fig. 3 for η = 0.1, 0.3. According to this figure, the maximum value of the peak of one-dimensional (1D) Van Hove singularities in greater values of vacancy concentrations become less, also at greater values of vacancy concentrations, SWCNTs lose their 1D characteristics and become similar to a kind of 2D disordered graphene sheet. In realistic, by increasing the value of vacancy concentrations, the freedom of valance electrons becomes higher, so we expect the feature of 2D structure. Also there is a small shift in DOS because of influence of vacancy percentage on the on-site energy of carbon atoms. By increasing the value of vacancy concentrations, as it is depicted in Fig. 3, the number of peaks becomes less. In addition, by increasing vacancy percentage on (12, 0) SWCNT the energy gap is increased. This fact can be realized by considering the broken lattice symmetries. By breaking symmetry, the valance electrons do not obey Bloch order, so multiple scattering is occurred, then we have gap opening and metallic SWCNTs is changed to semi-metallic SWCNTs.
The variations of the energy gap versus vacancy percentage is shown in Fig. 4(a), 4(b), and 4(c) for (7, 0), (8, 0), (12, 0) SWCNTs, respectively. The results show that, by increasing vacancy percentage for all three types of zigzag SWCNTs, the energy gap is also increased. This treatment is realized by multiple scattering that is occurred in vacancies. Moreover, the slopes of the graphs for the small values of vacancy percentages are not the same and at low vacancy percentages, the growth of gap opening versus vacancy percentage for (12, 0) SWCNT is higher than the other ones. Also by considering Fig 4(a), 4(b), and 4(c), we realize that for η = 0, the energy gaps of (7, 0), (8, 0), and (12, 0) SWCNTs, are 1.19, 1.12, and 0.02 eV, respectively. Furthermore, in special vacancy percentage, the energy gap of (7, 0) SWCNT is higher than the other ones. We can realize this result by considering the number of carbon atoms in the unit cell of SWCNTs and the diameter of SWCNTs. The number of carbon atoms in the unit cell of (n, 0) SWCNTs, q, is derived by q = 2n, so the number of carbon atoms in the unit cell of (7, 0), (8, 0), (12, 0) SWCNTs are 14, 16, and 24, respectively. Thus the number of carbon atoms and diameter of (7, 0) SWCNT is less than the other ones, so in special vacancy percentage, the affects of breaking symmetries and backscattering are more dominant respect to the others.
The energy gap versus vacancy percentage for (a) (7, 0) SWCNT, (b) (8, 0) SWCNT, (c) (12, 0) SWCNT.
The energy gap of different kinds of zigzag SWCNTs as a function of nanotube index n for three different values of vacancy percentage 0, 0.01, and 0.15 is displayed in Fig. 5. This figure shows that for all zigzag SWCNTs the energy gap is also increased by increasing vacancy percentage. Thus metallic to semi-metallic transition is occurred for metallic zigzag SWCNTs that is considered by Yuchen Ma et al. [Yuchen, 2004] by using spin-polarized density functional theory. They investigated the influence of configuration mono-vacancy on electronic properties of zigzag SWCNTs and showed for six kinds of zigzag SWCNTs with n = 5… 10, the vacancies can change the electronic properties of SWCNTs, converting some metallic nanotubes to semiconductors. Also they found that only (5, 0) SWCNT is always semiconductor by changing configuration of mono-vacancy and here according to Fig. 5, we see that by increasing the value of vacancy percentage, (5, 0) SWCNT remain semiconductor. However, this treatment also occurs for all kinds of semiconductor zigzag SWCNTs such as (7, 0), (10, 0), and so on.
The energy gap versus the zigzag nanotube index for three values of vacancy percentage η = 0.0, 0.01, 0.15.
In summary by using CPA method, effects of vacancy percentage on the energy gap of zigzag SWCNTs were investigated. It is found that the energy gap of pure (12, 0) SWCNT is 0.02 eV that is in agreement with LDA calculations and the experimental work of M. Ouyang et al., Also by increasing the concentration of vacancies, the energy gap is increased and a metallic to semi-metallic transition is occurred for metallic (n, 0) zigzag SWCNTs. For semiconductor zigzag SWCNTs any transition does not appear. As mentioned before, at large enough vacancy concentrations, the SWCNTs lose their 1D characteristics and the associated density of states become similar to a kind of 2D disordered graphene sheet. In addition, our calculations show that the maximum energy gap is increased by decreasing zigzag nanotube index (n) which is due to decreasing diameter of SWCNT and therefore increasing the effect of vacancies in back scattering. Therefore by creation vacancies in the structure of zigzag SWCNTs the metallic to semi-metallic transition are occurred. In addition, it is possible to achieve the special semiconductor SWCNT with a predetermined energy gap in order to use in semiconductor industry.
Carbon nanotubes show promise for applications in future electronic systems, and the performance of carbon nanotube devices, in particular, has been rapidly advancing. Semiconducting nanotubes are suitable for transistors. In order to correctly treat carbon nanotube transistors, strong quantum confinement around the tube circumferential direction, quantum tunneling through Schottky barriers at the metal/nanotube contacts, and quantum tunneling and reflection at barriers in nanotube channel need to be considered by the non-equilibrium Green’s function (NEGF) formalism. We study the density of states of (n, 0) carbon nanotubes in which an atom has been removed to produce a vacancy [Faizabadi et al.,2009] (Fig 6). Vacancy is one of the most common defects in carbon nanotubes and affects the physical properties of them. The on-site energy of the vacancy element is equaled high value, essentially repelling the carriers from that particular site.
The schematic of a finite zigzag carbon nanotube in presence a single vacancy. The modes are aligned along the carbon nanotube axis and rings that are around the cylindrical circumference.
Our system consists of a carbon nanotube that coupled to the left L and right R lead described by the following Hamiltonian
where,
The total Hamiltonian for a system consist of a finite carbon nanotube which is connected into two leads, the left and right ones is
where,
here, r and a refer to retarded and advanced Green’s function. For an isolated non interacting system the Green function is obtained after the matrix inversion.
The Green function coupled to the leads is determined by the expression
where,
The density of states (DOS) as a function of the incident electron energy for a carbon nanotube is [Datta, 1995]
The density of states of finite zigzag carbon nanotubes (11,0) in presence of the single vacancy in a: 2th ring b: 3th ring c: 4th ring of 4th mode
The hopping parameter for the nearest neighbour is fixed to
By using this model the effect of vacancies on the density of states of finite zigzag carbon nanotubes (11, 0), is investigated. This kind of carbon nanotube is semiconductor with an energy gap around the Fermi energy.
In Fig 7 the density of states of finite zigzag carbon nanotubes (11, 0) in presence of the single vacancy is calculated. In these figures we consider the vacancy site in the same mode and different rings. The presence of vacancies breaks the symmetry of the system and creates available states around zero energy, in prohibited band gaps. The density of states around the Fermi level rises due to the broken bands at the vacancy site. These states filled with electrons around the Fermi level that in perfect carbon nanotubes there aren’t any states in Fermi energy.
In other work the density of states of finite zigzag carbon nanotubes in the channel of (11, 0) in presence of two vacancies is investigated that they are in different rings and modes (Fig 8 and Fig 9). The two vacancies are placed at different sites in the channel. In these figures the states that they are near the Fermi level filled with electrons. The vacancies decrease the density of states of finite semiconductor zigzag carbon nanotubes totally.
The density of states of finite zigzag carbon nanotubes (11, 0) in presence of two vacancies in 5th ring of 2th and 8th modes
The density of states of a finite zigzag carbon nanotube (11, 0) in presence of two vacancies in 2th and 7th rings of 6th mode
Here by using the method which described in the previous section the density of states of finite armchair carbon nanotubes for different finite length are probed [Orlikowski et al.,2007]. Besides the effect of two vacancies on different length of the finite armchair carbon nanotubes (6, 6), is investigated [Faizabadi & Heidaripour, 2010]
The finite armchair carbon nanotube with metallic leads in the presence of a vacancy.
Our Probes show that the presence of two vacancies that they are near each other has little affect on the density of states at Fermi energy (Fig 11). When two vacancies are far from each other, by breaking orbital of atoms, create available states around the Fermi energy and increase the density of states (Fig12).
The vacancies by breaking the system symmetry create available states around zero energy and omit the carbon atomic potential in carbon nanotube. The bands break at the vicinity of the vacancy site and density of states around the Fermi level rises and electrons filled the states.
Carbon nanotubes of different chiralities can be joined through a small number of pentagon heptagon defects, forming a nano scale metal/semiconductor or metal/metal carbon nanotube heterojunction (HJ). Carbon nanotube heterojunctions (HJs), which continuously connect nanotubes of different chiral structure using a small number of atomic scale defects, represent the ultimate scaling of electronic interfaces [Chico et al.,1996].
We consider a quantum dot (QD) that is built of zigzag
The junction between two single wall Carbon nanotubes is a pentagon–heptagon (p-h) pair that is the smallest topological defect with minimal local curvature and zero net curvature (Fig 14).
The density of states of an armchair carbon nanotube (6,6) in the presence of two vacancies which they are near each other for different length of carbon nanotube a: 3rings b: 5 rings c: 7 rings d: 9 rings e: 11 rings f: 13 rings
The density of states of an armchair carbon nanotube (6,6) in the presence of two vacancies which they are far from each other for different length of carbon nanotube a: 3 rings b: 5 rings c: 7 rings d: 9 rings e: 11 rings f: 13 rings
Schematic view of a carbon nanotube quantum dot.
Schematic representation of Armchair and zigzag modes and rings in real space, a pentagon-heptagon ring as a junction between zigzag and armchair carbon nanotubes quantum dots are shown.
We work in a single π-band tight-binding approximation. The Hamiltonian in the site representation is
where r, s denote carbon sites,
where, HOD is the Hamiltonian for the quantum dot where H C.L.R. refers to the Hamiltonian for left and right leads and the Hamiltonian for central region between two leads and there are some terms
The density of states of the system is
G r.a. are the retarded and advanced Green functions inside the system, taking into account the coupling with the electrodes via the self-energies ΣL and ΣR\n\t\t\t
We investigate, the density of states of a single wall Carbon nanotube
The density of states of a single wall Carbon nanotube quantum dot with several armchair length
The density of states of a single wall Carbon nanotube quantum dot with several armchair length.
Magnetoelectric [ME] particulate composites combine the magnetostrictive and the piezoelectric properties of materials, through product tensor properties [1]. Multiferroic magnetoelectric materials possess two or more ferroic properties such as ferroelectricity, ferromagnetism and ferroelasticity [2, 3, 4]. The spin lattice structure in a magnetoelectric composite can be directly related to (i) linear or non-linear shape change in magnetostrictive phase under alternative magnetic field, (ii) polarization change in piezoelectric phase through field induced alternating stress–strain and finally (iii) charge developed in the piezoelectric phase due to this alternating stress [1, 5, 6]. The interrelationship between ferroelectricity and magnetism allows magnetic control of ferroelectric properties and vice-versa. Single phase magnetoelectrics such as Cr2O3, BiFeO3, YMnO3 etc. exhibit poor combination of electric and magnetic properties at room temperature [7, 8, 9]. On the other hand, two-phase magnetoelectric (ME) materials provide large coupling and may play important role in future magnetoelectric devices [10]. Another important issue that can be very influential not only in nanostructures or multilayer structure but also in bulk ceramic composite is the interface chemistry. Migration of mobile atoms (from ferroelectric and magnetic phases) through the interface causes ferroelectric and magnetic instability and alters the interface chemistry, which affects the interface magnetoelectric properties [10, 11]. There are lot of advantages that sintered particulate offers, compared to in-situ composites (i.e. unidirectionally solidified of BaTiO3 – CoFe2O4), such as they are cost effective to produce, fabrication is easy and finally and most importantly the process parameters can be controlled much better. In terms of ME responses, laminate magnetoelectric composites gained a lot of popularity and can be fabricated by attaching piezoelectric layer between two layers of magnetostrictive discs or plates. Sintered particulate composites exhibits low resistivity, defects, diffusions at the interface and incompatibility of elastic compliances and mismatch in coefficient of thermal expansion. As a result, sintered composites show inferior ME responses compared to laminated composites. Therefore, it is essential to augment the composition, grain size, grain orientation, and sintering conditions in order to enhance the Magnetoelectric properties of the sintered composites.
The composites exploit the product property of the materials [12, 13, 14] where the ME effect can be realized by mixing individual piezomagnetic and piezoelectric phases or individual magnetostrictive and piezoelectric phases. In early 70s, researchers at Philips Laboratories demonstrated ME composites [15, 16, 17, 18] by unidirectional solidification of eutectic composition of BaTiO3 – CoFe2O4. The results showed a high ME voltage coefficient dE/dH of 50 mV/cm•Oe with 1.5 wt % of excess of TiO2 [15]. Later an even higher ME coefficient of 130 mV/cm•Oe was obtained in eutectic composition of BaTiO3-CoFe2O4 by unidirectional solidification [17]. Currently, various particulate composites consisting of piezoelectric and magnetostrictive materials with different connectivity schemes including “3-0” and “2-0” have been reported, using LiFe5O8, NiFe2O4, (Ni,Zn)Fe2O4, CoFe2O4, CuFe2O4 as magnetostrictive materials and BaTiO3, Pb(Zr,Ti)O3 as piezoelectric phase [15, 16, 17, 18, 19, 20, 21, 22, 23, 24].
The figure of merit for a ferromagnetic-ferroelectric composite is large magnetoelectric coefficient (i.e., susceptibility) given as:
Here μ = ferromagnetic permeability and ε is the dielectric permittivity. It is eminent from Eq. (1) that a high dielectric constant piezoelectric phase and a high permeability magnetic phase would produce a composite with optimum ME response if we can keep the high resistivity, low interface defects and lower rate of interface diffusion. Literatures and experimental review showed that the Nickel Ferrites are stable in PZT up to 1250°C and offers higher permeabilities. Also in terms of resistivity and loss, Ni based ferrite are preferable over Mn based ferrite, because Ni based Ferrites have higher electric resistivity and lower dielectric loss.
The thermodynamic consideration of magnetoelectric effect is obtained from the expansion of free energy of the system in terms of magnetic and electric field, such as.
where and are the electric field and magnetic field respectively. Differentiation of Eq. (2) gives us polarization and magnetization as following:
Here
Single phase multiferroic materials shows either low permeability or low permittivity or both. As a result, the magnetoelectric coupling is small. For high response dual phase magnetoelectric materials, combination between ferroelectric and ferromagnetic phase need to be established via strain. Piezoelectric coefficient (d33/d31) defines the materials property that converts applied stress in to proportional electric charge. The linear equations for a piezoelectricity and magnetostrictions are given as:
where
D = the dielectric displacement,
E = electric field,
T = stress,
S = strain,
ε = permittivity,
s = elastic compliance,
d = is piezoelectric charge constant.
B = magnetic induction.
q = piezo magnetic coefficient.
μ = permeability and.
H = magnetic field.
Magnetoelectric coefficient of a composite can be described in direct notation of tensors as:
where σ, c and K are the stress, stiffness constant at constant field and dielectric constant at constant strain respectively. It was found in the literatures that ME coefficient can be varied by piezoelectric and piezomagnetic coefficients. Elastic compliances (s) of piezoelectric and magnetostrictive phases are found to be another critical parameter that affects the ME coefficient. According to Srinivasan et al., the ME coefficient can be written as:
where
q11 = piezomagnetic coefficient of the magnetic phase and.
Further derivation for the magnetoelectric coefficient in T – T mode of Eq. (13) was done by Dong et al. and was expressed as:
where
n = the ratio of magnetostrictive layer thickness to the composite thickness,
d = the piezoelectric strain constant,
s = the elastic constant,
g = the piezoelectric voltage constant,
A = the cross-sectional area of the laminate and.
k = is the electromechanical coupling factor.
It is quite clear from the Eq. 14 that the ME coefficient is directly related to piezoelectric constant (d31) and piezomagnetic coefficient (q11).
As is well known that compared to BaTiO3, PZT has stronger piezoelectric and dielectric properties, higher Curie temperature, higher resistivity and lower sintering temperature. Doping in PZT can be done by adding acceptor dopants (Fe, Mn, Ni, Co) or donor dopants (La, Sb, Bi, W, Nb) in order to make it piezoelectrically hard or a soft. Hard piezoelectric materials can be characterized as decreased dielectric constant and loss, lower elastic compliance, lower electromechanical coupling factor, and lower electromechanical losses compared to undoped PZT. Soft piezoelectric materials exhibit increased dielectric constant, dielectric loss, elastic compliance, electromechanical coupling factor, and electromechanical losses. Table 1 shows a comparison chart how the physical, dielectric and piezoelectric properties vary between soft and hard piezoelectric materials.
Properties | Soft Piezoelectric | Hard Piezoelectric |
---|---|---|
Electrical Resistance | Higher | Lower |
Permittivity | Higher | Lower |
Dielectric Constants | Superior | Inferior |
Dielectric Loss | Higher | Lower |
Piezoelectric Constants | Superior | Inferior |
Coercive Field | Lower | Higher |
Mechanical Quality Factor | Lower | Higher |
Electromechanical Coupling Factor | Larger | Smaller |
Linearity | Poor | Better |
Comparison of Dielectric and Piezoelectric properties between Soft and Hard Piezoelectric Materials.
The open circuit output voltage (V), under an applied force of a ceramic is given as:
where
t = the thickness of the ceramic,
E = the electric field, and.
g = the piezoelectric voltage coefficient given as:
where εX is the dielectric constant under constant stress condition.
The charge (Q) generated on the piezoelectric ceramic is given by the relation:
where
It can be inferred from Eq. (17) that a piezoelectric plate can behave like a parallel plate capacitor at low frequencies. From here it can be derived that under ac stress, electric energy generated is given as:
or energy per unit volume,
Eq. (15) and (19) conclude that under a fixed AC mechanical stress, piezoelectric material with high (d.g) product and high piezoelectric voltage (g) constant will generate high voltage and high power for a fixed area and thickness. In the case of magnetoelectric composite, the force is applied on the piezoelectric phase due to magnetostriction through elastic coupling, therefore the high energy density piezoelectric material will lead to higher response.
Nickel and cobalt ferrites have the advantage of higher resistivity and increased permeability. Cobalt ferrite has higher magnetization but also has higher coercivity compared to nickel ferrite. In order to increase the resistivity, permeability, and magnetization, doping of zinc in to ferrite is beneficial but it also reduces its magnetic Curie temperature. The theory behind this is, Zn+2 replaces Fe+3 on the tetrahedral sites as it is added to the spinel structure and Fe+3 occupies the vacant octahedral sites emptied by Co+2. As a result, there will be no unpaired electrons for Zn+2, Co+2 has one and Fe+3 has five. Hence the outcome of it is increase in magnetization of Zn-doped ferrites.
Pb(Zr0.52Ti0.48)O3 (PZT), 0.85[Pb(Zr0.52Ti0.48)O3] – 0.15[Pb(Zn1/3Nb2/3)O3 [PZT (soft)], Pb(Zr0.56Ti0.44)O3 ─ 0.1 Pb[(Zn0.8/3 Ni0.2/3)Nb2/3]O3 + 2 (mol %) MnO2 [PZT (hard)], Ni(1-x)ZnxFe2O4 [NZF] (where x varies from 0 to 0.5) and Co(1-y)ZnyFe2O4 [CZF], were synthesized using mixed oxide route. PZT, NZF and CZF powders were calcined at 750°C for 2 hrs and 1000°C for 5 hrs, respectively in order to make sure that inorganic oxides react to each other. Powder X-ray diffractions patterns were taken using Siemens Krystalloflex 810 D500 diffractometer to make sure that the pure perovskite and pure spinel structure was formed out of PZT/PZT (soft)/PZT (hard) and NZF/CFO/CZF. The PZT and NZF powders were then mixed together as 0.8 PZT – 0.2 NZF and compacted. CFO/CZF powders were mixed in PZT with stoichiometric ratio of 3, 5, 10, 15 and 20 mole percents. After homogeneous mixing using ball mill, powder was pressed using a hardened steel die having diameter of 12.7 mm under a pressure of 2 ksi and then cold isostatically pressed under pressure of 40 ksi. This was followed by pressure-less sintering in air at 1150°C for 2 hrs, resulting in consolidated ceramic composites. XRD patterns of sintered samples showed only two phases (PZT and CFO/CZF). Ag/Pd paste was painted manually on top and bottom of the sintered disc using a paint brush and heated for an hour at 825o C. The polarization process was done in a heated (120°C) silicone oil bath. D.C. electrical field of 2.5 kV/mm for 20 minutes was applied for the poling process. Dielectric constant as a function of temperature was measured using HP 4274A LCR meter (Hewlett Packard Co. USA). Magnetization as a function of temperature was measured using Quantum Design physical properties measurement system from room temperature to 900 K. Transmission electron microscopy (TEM) was conducted by using JEOL 1200EX machine with an accelerated voltage of 120 kV.
Figure 1(a) [25] Compares the polarization of undoped, hard and soft PZT. The max polarizations observed were 14.61, 23.54 and 31.65 μC/cm2 respectively for these three groups. It was also recorded that elastic compliance (S11) of these three compositions are 1.74 x 10−11 (soft), 1.37 x 10−11 (hard) and 1.11 x 10−11 (undoped) m2/N respectively. Due to the presence of metal vacancies, soft PZT’s have higher polarizations per unit field applied, resulting in enhancement in both the dielectric and the piezoelectric susceptibilities.
(a) Polarization vs. electric field loop and (b) ME coefficient vs. DC bias of different compositions of PZT – 20 NZF composites [25].
An increase in piezoelectric constant (d33) (from 75 to 105 pC/N) and increase in dielectric constant (from 642 to 914) was observed when an undoped PZT was doped with PZN to make it soft. These increase in dielectric and piezoelectric properties clearly reflected in Magnetoelectric coefficient of PZT (soft) – 20 NZF composite
Microstructure of PZT (undoped) – 20NZF and PZT (soft) – 20NZF composites were dense with the measured densities of ≥95% [25]. And the average grain size of the PZT – 20NZF composite was about 800 - 850 nm, whereas that of PZT (soft) – 20 NZF was smaller and the average ranges between 650 and 700 nm. Doping of PZN in PZT reduces the grain size as both the composite were sintered at 1150°C for 2 hours. In one of our previous studies it was shown that above 600 nm, the ME coefficient does not change much with increase in grain size [26]. So, both PZT (undoped) – 20NZF and PZT (soft) – 20NZF composites have optimum grainsize in terms of ME coefficient. Besides the grainsize reduction, the resistivity of PZT increases upon doping with PZN, as lower leakage currents were observed after poling (Figure 2).
Microstructure of (a) PZT – 20 NZF and (b) (0.85PZT –0.15 PZN) – 20 NZF [25].
Figure 3 [25] shows the saturation magnetization (Ms), coercive field (Hc) and magnetic Curie Temperature of the PZT – 20NZF composite as a function of Zn doping in NZF. It is clearly observed that the coercive field starts to drop as we increase the Zn doping in NZF. On the other hand, saturation magnetization becomes optimum (0.72 emu/gm) at around 30% Zn doping in NZF and then starts to drop off with increase in Zn doping. In terms of Ferromagnetic Curie Temperature, it started to drop from 850 K to 549 K as the Zn concentration was increased from 0 to 50 mole %.
Magnetic properties as a function of Zn doping. (a) Ms and Hc vs. Zn concentration and (b) magnetization vs. temperature [25].
Figure 4(a) [25] Shows the hkl = (400) diffraction peak for NZF composites as a function of Zn concentration. The (400) peak started to shift towards lower Bragg angles as Zn concentration was increased which indicated an enlargement of lattice parameters. From Bragg’s law, we determine a 0.9% lattice expansion (8.32 Å for NiFe2O4 and 8.394 Å for Ni0.5Zn0.5Fe2O4) with this change in crystal chemistry. Figure 4(b) shows the ME voltage coefficient as a function Zn concentration in PZT – 20 NZF. 30 at% Zn concentration in NZF showed the maximum value of
Effect of Zn concentration on (a) peak shift of 400 peaks and (b) magnetoelectric coefficient of PZT – 20 NZF [25].
Figure 5 (a-c)show the density, dielectric constant and piezoelectric constant as a function of mole percent ferrite in the composite for two different compositions. It is clear that as the ferrite concentration increases, density, dielectric constant and piezoelectric constant decreases. All the compositions showed more than 98% of the theoretical density and the microstructural analysis confirmed this measurement. For PZT – CFO, there is a slight increase in density from 3–5% concentration which can be attributed to better sintering as the.
(a), (b) and (c) The density, dielectric constant and piezoelectric constant as a function of mole percent ferrite.
ferrite becomes more homogenized in the matrix. The density increase was also observed when the composition changed from 10–15% for CFO in PZT – CFO composite. This can be explained by grain coarsening of PZT. As the CFO content increases from 10–15% there is slight increase in dielectric constant and then with further increase in ferrite concentration, dielectric constant starts to drop. It is well-known that grain coarsening has direct effect on dielectric properties, whereby, dielectric constant increases with larger grain size. There was no significant difference in piezoelectric data between CFO and CZF based ferrite composites with ferrite concentration.
A comparison between PZT – CFO and PZT – CZF in terms of room temperature magnetic properties is presented in Figure 6(a) and (b) for 3% and 5% ferrite concentration. In both the cases, a considerable difference in coercivity between CFO and CZF particles was observed. For 3% ferrite concentration the saturation magnetization of CFO was slightly higher than CZF but the coercivity was much lower (33 Oe compared to 263 Oe). For 5% CFO and CZF concentration, coercive fields of 53 and 288 Oe were measured and the saturation magnetization of CFO particle (76.6 memu) was slightly lower than the CZF particle (88.54 memu). Figure 6(c) and (d) show the magnetization of PZT – 5 CFO and PZT – 5 CZF composites from 5 K to 300 K and from 310 K to 1000 K respectively. It is quite interesting to observe that the magnetization for both the composites start to drop from 5 K to 300 K. The drop for PZT – 5CFO is linear - 0.04 emu to 0.035 emu and for PZT – 5CZF is non –linear 0.075 to 0.065 emu respectively for 70 mg of sample weight. There is a slope change in the PZT – CZF magnetization curve at around 150 K – which is close to the curie temperature of ZnFe2O4. From 150 K to 5 K – an increased slope was observed. Below the curie temperature, Zn ferrite also contributed to the magnetization curve. Besides the increase in magnetization in subzero temperature for both the composites can also be explained by the atomic vibration of the crystal lattice. As the temperature starts to drop below the room temperature and approaches the absolute zero temperature, the atomic vibration is seized, resulting in much stable crystal lattice, which gives us accurate measurement of the magnetization. At high temperature (from 310 to 1000 K) the magnetization of PZT – CFO starts to increase and then decrease to zero at Curie.
(a) and (b). Hysteresis loop for PZT – CFO and PZT – CZF. (c) and (d): the magnetization of PZT – 5 CFO and PZT – 5 CZF composites.
temperature, which is almost 750 K. The PZT – CZF Curie temperature was recorded at 450 K. This drop in Curie temperature from 750 to 450 K is due to the substitution of Zn on the cobalt site. The substitution of Zn2+ for Fe3+ reduces the Curie temperature of the ferrite [6, 7, 9]. On the other hand, increasing the zinc content of cobalt-zinc ferrites increases their lattice parameter while decreasing the saturation magnetization above 50% Zn due to augmented B-B interaction followed by reduced A-B interaction. Also, the presence of Co2+ ion in the cobalt-zinc ferrite hastens the Co2+ + Fe3+⇔ Co3+ + Fe2+ exchange reaction in octahedral sites, while tetrahedral sites are preferentially occupied by zinc cations. Tetrahedral sites in the spinel structure are suitable for cationic radii in the range of 0.58 Å to 0.67 Å, while octahedral sites can accept cations with radii in the range of 0.70 Å to 0.75 Å [22]. Therefore, in the unit cell structure, Co2+ (0.72 Å) and Fe2+(0.75 Å) may replace Zn2+(0.74 Å), while Co3+(0.63 Å) can exchange sites with Fe3+(0.64 Å). This exchange in Co-Zn ferrite system, the substitution of non-magnetic zinc in place of ferromagnetic cobalt leads to a decrease in Curie temperature owing to diminishing A-B super exchange interaction.
Figure 7 shows the XRD pattern for CFO and CZF particles. Inset shows magnified 311 peaks for CFO and CZF particles respectively. The shift in peaks to lower angle for CZF particles is clearly noticeable which results in a larger unit cell size for CZF particles. The increase in unit cell can induce strain. Strain can be revealed as strain fields or cleavage or other defects inside the microstructure. Figure 8 shows the ME coefficient as a function.
XRD patterns for CFO and CZF particles.
ME coefficient as a function of ferrite concentration.
of ferrite concentration. For PZT – CFO the maximum ME coefficient of 25 mV/cm.Oe was recorded at 15% ferrite concentration, which drops again for 20% ferrite. The measured ME coefficient is quite low compared to the PZT – Nickel ferrite composites. Cobalt ferrite has a very high coercive field compared to the nickel ferrite composition. Thus, a high DC bias field is necessary to obtain the peak ME coefficient. Another contributing factor is the initial permeability. Cobalt ferrite has lower initial permeability than the nickel ferrite which contributes towards lower ME coefficient.
Figure 9(a) and (b) show the SEM images of the microstructure of the PZT-20CFO and PZT – 20CZF samples sintered at 1125°C respectively. Dense microstructures for both compositions were obtained and the sintered samples had grain size of 1 to 1.5 μm. Elemental analysis using the EDX showed that CFO and CZF grains are distributed in the piezoelectric matrix. Figure 10(a) and (b) shows the bright field TEM images of the sintered.
(a) and (b): SEM images of the microstructure of the PZT-20CFO and PZT – 20CZF.
(a) and (b): bright field TEM images of the sintered PZT – 20 CFO and PZT – 20 CZF.
PZT – 20 CFO and PZT – 20 CZF samples respectively. Compared to PZT – CFO, PZT - CZF sintered samples were found to consist of twin boundaries, cleavage, and strain fields at the interface of PZT and CZF grains. These defects develop to accommodate the mismatch in the PZT and CZF lattices, as ferrite (CFO/CZF) lattice parameters are more than double the lattice parameter of the PZT lattice. The lattice parameter increases by 0.2% for 40% Zn doped sample as observed in the XRD patterns. In the inset, diffraction pattern of a PZT grain is shown. No superlattice diffraction spots were observed near the first order diffraction spots, which indicate less intense diffusion level. From the SAED diffraction pattern the lattice parameter a and c are calculated as 4.05 and 4.132 Å, hence the c/a ratio is 1.02. Larger width domain patterns were also observed near the interface, which is characteristic of 90o domains. Besides that, intergranular heterogeneity in domain width is observed all over the structure especially near the interface. The observed defects in PZT - 5% CZF are in line with the SEM images. A finer scale domain structure, which usually has striation like morphology and periodically spaced was observed in this structure away from the interface. These finer domains appear when the stress is relieved from the structure. It can be inferred that near the ferroelectric – ferromagnetic interface, the stress is higher and defects are observed due to strain mismatch, whereas the area away from the interface has lower stress.
In summary, it is understood from the experimental studies that the magnetoelectric coefficient (
I would like to thank Prof. Shashank Priya of Penn State University for his technical guidance.
IntechOpen's Authorship Policy is based on ICMJE criteria for authorship. An Author, one must:
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