Abstract
The dimensional effect on ferroelectricity is a subject of long-understanding fundamental interest. While the low-dimensional finite ferroelectric structures are committed to the potential increase in electronics miniaturization, these anticipated benefits hinged on the existence of stable ferroelectric states in low-dimensional structures. This phenomenon can be understood from the point of basic physics. This chapter reviews the literature on the finite-size effects in ferroelectrics, emphasizing perovskite and polyvinylidene-based polymer ferroelectrics having technological importance. The reviewed data revealed that despite critical dimensionality being predicted in ferroelectrics, polarization switching phenomenon is possible in as thin as one monolayer film, at least in the case of P(VDF-TrFE) Langmuir–Blodgett thin film with stabilized functional properties. The roles of the depolarization field, electrode interfaces, domain wall motion, etc. in controlling the measured ferroelectric properties have been discussed. Further, the observed deviation from the bulk properties is explained based on both experimental and theoretical modeling.
Keywords
- perovskite ferroelectrics
- boundary conditions
- dimensional confinement
- polarization switching kinetics
1. Introduction
Ferroelectric materials have been recognized as one of the focal points in condensed matter physics and material science for over 50 years. This is the most exciting material used in the electronics industry possessing switchable spontaneous polarization with the direction of applied field stress. These ferroelectrics exhibit substantial piezoelectricity as well. Accordingly, these materials are widely exploited as ultrasonic devices, sensors, actuators, energy storage, memory components, and noticeably more consumer electronics products. At the next level up, modern electronics have taken the charge of electronics miniaturization with the nano-dimensional system including thin film and ultra-thin films precisely placed in the electronics circuit [1]. In the last few decades, the advancement in voltage-modulated scanning probe microscopy techniques, exemplified by piezoresponse force microscopy (PFM) and associated spectroscopies, opened a driveway to make use of ferroelectrics on a single-digit nanometer level. Current research in the United States and other nations is pushing the limits of miniaturization to the point that structures only hundreds of atom-thick will be commonly manufactured [2]. This high-precision microelectronics assembly is achieved by scaling down the materials in accord. Nevertheless, the performance of the ferroelectric material is related to the way they are structurally confined undoubtedly due to structure–property alliance. Whilst the dimensional downscaling of the ferroelectric materials from bulk to nanoscale boost the possibilities to endure the boxing up of increased numbers of components into single electronics integrated circuit, the functional properties are suppressed as the material goes down to the critical dimension. The theoretical studies on the nano-dimensional system including thin films and ultra-thin films have shown that ferroelectricity persists down to the nanoscale. However, the experimental approach at this scale revealed the disappearance of the ferroelectric switching phenomena as the critical size of the crystal in the ferroelectric system is reached. For example, 80% of the dielectric and piezoelectric properties of perovskite ceramics are suppressed compared to their bulk counterpart as the material is scaled down to ∼10 nm [3]. A bulk-like ferroelectricity with finite-size modifications has been observed in nanocrystals as thin as 25 Å crystalline ferroelectric polymer films [4, 5, 6], 100 Å perovskite films [7] and as small as 250 Å in diameter ultrafine nanoparticles [8]. These outcomes can be elucidated as the bulk ferroelectricity is stamped out by surface depolarization energies and inferred that the bulk transition is limited by minimum critical dimension. This is noted as the scaling effect. It occupies a prominent place in the research area as our limited intuition for the nanoworld and comprehensive knowledge of structure–property relations often lag behind technological advances. Since nanostructuring of ferroelectric materials ends up with the appearance of their critical size limit, below which the essential ferroelectric parameters cannot be sustained, a completely contrasting behavior has been observed in hafnium based thin films which displayed an unconventional form of ferroelectricity in thin films with a thickness of only a few nanometers. This allows the construction of nanometer-sized memories and logic devices. Until now, however, it is an unsolved mystery how ferroelectricity could turn-out at this scale. A study reported by scientists at the University of Groningen, Netherland revealed that migrating oxygen atoms (or vacancies) are supposed to be responsible for the distinguished polarization switching phenomena in a hafnium-based capacitor [9]. Likewise, Bune et al. [10] have reported the near-absence of finite-size effect in two monolayer crystalline Langmuir–Blodgett film of P(VDF-TrFE) ferroelectric polymer. This contrasting behavior of ferroelectrics increased the curiosity of the scientific community in this stream. Although, well-developed theories exist for bulk materials, the extrapolation of these theories to thin films and nanostructures is frequently ambiguous. Hence understanding the dimensional system and going into the issues with scaling and size effect is crucial and is the central challenge for the ferroelectrics-based electronics community.
The chapter is aspired to understand the fundamental mechanism underlying ferroelectric behavioral patterns in polymer and ceramics systems as it is scaled down to a critical dimensional range attractive for a variety of technological applications. This knowledge would be beneficial for the current ferroelectric materials as well as for designing new materials with even a cut above electroactive property. The chapter is divaricated into six sections. Section 1 introduces the topic of our discussion. Section 2 talks about the theoretical framework for the scaling effect in the ferroelectric system. Section 3 discusses about how material functional properties are depleted in nano-confined perovskite ferroelectric system including phase transition temperatures, spontaneous polarization, coercive field and piezoelectric coefficient. Next are the possible causes for the observed scaling effect. Section 5 explores the scaling effect in ferroelectric polymer thin films with special emphasis on PVDF and its copolymers. The fundamental ferroelectric polarization switching mechanism for nanostructures is introduced and the models for thin films at the nanoscale are reviewed in Section 6. The nucleation-limited-switching (NLS) model based on region-to-region switching kinetics for polymer thin films will be highlighted. Finally, the observed results will be summarized and the future outlook for ferroelectric nanostructures are discussed. We clarify here that the goal of this chapter is not to review all the work in the vast field of ferroelectrics but rather to provide a scholastic presentation for the readers through the use of select case studies and authors experience in the field.
2. Theoretical framework
The more is the challenge for developing nano-scaled devices, the more is the challenge to sustain their ferroelectricity at this scale. To capture the comprehensive knowledge in the versatility of ferroelectricity as the material is scaled down, particularly at the nanoscale, a theoretical framework is exceedingly advantageous. The first-principle density functional theory (DFT)-based modeling and simulations plays a significant role as the fundamental properties could be envisioned and act as guidelines in the design of ferroelectric nanostructures. For the last decade, it has been successfully implied to various ferroelectric bulk crystals as well as nanostructures. According to first-principle density functional theory, ferroelectricity is analyzed in two possible ways [11]: (a) calculation of total energy by solving ground state problem for a given potential, (b) computation of linear response (LR). This is done by discovering the lowest order changes in ground state energy as the potential changes. The former provides the knowledge about the parameters which is the first derivative of total energy such as stress or electric polarization while the latter computes the properties corresponding to the second and third derivatives of total energy such as phonons, dielectric, piezoelectric and other compliances. In the perovskite ferroelectrics oxides, the transition metal is in
3. Critical dimensional range for perovskite ferroelectrics
On the edge of the ferroelectrics class is the ABO3 oxides (where ‘A’ and ‘B’ are two cations, often of different sizes, and O is the oxygen atom that bonds to both ions) occurring in the perovskite structure. Typical materials that crystallize in the perovskite structure having technological importance are ferroelectric
where
Following the JKD scaling theory, Xu et al. [32] investigated the ferroelectric properties in 20–330 nm of (0 0 1)- and (1 1 1)-oriented PbZr0.2Ti0.8O3 ceramics system. The change in the spontaneous polarization and the coercive field by lowering the dimension of thin PZT thin-film is delineated in Figure 1. Likewise, Venkata et al. [33], Hong et al. [34] also confirmed the falling of field-induced polarization behavior with the downscaling in perovskite polycrystals and ferroelectric nano-thin films respectively (Figure 1). It has been observed that (0 0 1)-oriented PZT film followed the JKD scaling while (1 1 1)-oriented heterostructures (∼<165 nm) deviated from the expected scaling. The first principle DFT calculation attributed this deviation to the formation of a lower energy barrier phase for switching which eventually reduces the domain-wall energy and exacerbates the deviation.
However, defying the general hypothesis on the scaling effect in perovskite ceramics, an increase in long-range ferroelectric order is observed in NaNbO3 by Juriji et al. [35] in 2017 as the material was scaled down below 0.27 μm which was attributed to the existence of intra-granular stresses induced during the formation of non-180° domain walls as the grain dimension is reduced. Recently, Lorenzo et al. [36] successfully developed an unusual ferroelectric orthorhombic phase (
4. Genesis of scaling effect in perovskite ferroelectrics
Ferroelectric instability is a consequence of a delicate balance between short-range and long-range dipolar interactions. These interactions are definitely perturbed in nanostructures. With the downscaling of ferroelectrics to nanoscale, the surface to volume ratio is changed, the short-range forces are altered at the surfaces and interfaces while long-range character is influenced by the limitation in finite sizes of the material. One of the critical issues in downscaling the perovskite ferroelectrics is the distortion of the ferroelectric phase such as orthorhombic or tetragonality (c/a) in crystals. It is noted that tetragonality in PbTiO3 crystals were rapidly decreased to 1 as it was scaled down to 7 nm [24] following the relation:
However, this explanation was not appropriate as the theoretical calculations pushed the limit of fabrication of perovskite ferroelectrics as thin as ∼15 nm [10, 16]. The origination of scaling and size effect is still not realized although two important explanations were suggested: (a) the distinctive intrinsic properties of nanoparticles smaller than critical dimension, (b) generation of local depolarization field due to the surface ions arresting the ferroelectric phase. The development of the depolarization field is a consequence of extrinsic effects such as electrical boundary conditions and electrode screening effect. It is the key issue in analyzing the ferroelectric domain structures, Further, the strain and the electrical polarization in ferroelectrics are coupled phenomena, therefore any misfit strain affairs change the spontaneous polarization of the material. Hence the materials are responsive to mechanical boundary conditions as well. The boundary conditions cognate with the contact situation between the surface of the ferroelectric film and the electrode, play a prominent role in the scaling effect of thin-films. The suppression of spontaneous polarization by instigating the surface and interfacial charges offsetting the normal component of the polarization, creates a depolarization field [38]. In a few cases, the depolarization electrical energy guided the retention of polar crystals by electrode screening effect [39]. The latter is associated with the perfect screening of the electrode and depolarization phase, thereby stabilizing the ferroelectric phase and its resulting properties [13]. While in other cases, it is completely considered for destabilizing the ferroelectric domains [17, 21, 40]. The size of the ferroelectric crystals strongly influences the magnitude of the depolarization field. The scaling of ferroelectrics to their critical dimensional range, being the surface charge remains constant, increases the voltage developed per unit length which induces the depolarization-field-induced scaling effect. The latter is eminent in thin films, when present strongly influences the ferroelectric domains. Further, with the reduced film thickness, rational growth is promoted that leads to strong mechanical boundary conditions, contributes to the scaling effect in ferroelectrics. Factors such as lattice mismatch in epitaxial grown thin films, the difference in the properties of the substrate and the ferroelectric film or growth-related strain generated during the fabrication process creates mechanical boundary conditions. It is associated with the substrate-induced stress/strain that is not only coupled with the spontaneous polarization but strongly influences the array of ferroelastic domains, if present. For example, if the polarization vector switches ferroelastically between [0 0 1] and [1 0 0] directions, then biaxial compression perpendicular to the polar axis will stabilize that orientation and increases the phase transition temperature. However, when these strain effects are overlaid on the scaling effect, the process is supposed to be reversed [41, 42]. Therefore, it is notable that mechanical boundary condition functions along with the intrinsic scaling effect [3]. In bulk ceramics, mechanical boundary conditions are created at the grain boundaries and developed a spontaneous dipole. Apart from surface/ferroelectric film interfaces, the other factors that strongly influence the scaling effect in ferroelectrics are the volume of domain walls and grain boundaries in the lower-dimensional scale of ferroelectric system. The extreme reduction in thin-films/grain size lessen the number of stable domain configurations and eventually mobility of domain boundaries decreases which resulted in low permittivity of the system [3]. Besides, crystal imperfections, doping effect, grain boundaries, microstructures, etc., are interlinked to the processing condition [43] may influence the scaling effect in perovskite ferroelectrics and requires independent assessment.
5. Scaling effect in ferroelectric polymers
Ferroelectric polymers such as poly(vinylidene fluoride) and its copolymer systems have evinced the distinguishing properties in lower-dimensional structures. Their nanostructures are emphasized as electrospun nanofibers [44], anodic aluminum oxide-templated nanotubes [45] and the 2D Langmuir–Blodgett (LB) nanofilm [46]. Few reports have also described the PVDF-nanosphere [47]. For example, Zhengguo et al. [48] reported the formation of P(VDF-TrFE) nanoparticles with sizes of 60–100 nm using a solution method with the successful application in low band-gap polymer photovoltaic devices. Mostly, these polymers are analyzed in the form of thin films [49, 50, 51]. Unlike ferroelectric ceramics, the polymer ferroelectrics are semicrystalline (amorphous and crystal parts are intertwined) in nature, therefore the ferroelectricity in the polymer is strongly affected by the interaction between the crystalline and amorphous interface. This is known as the nanoconfinement effect [52], according to which the dipole switching in polymer ferroelectrics largely depends on the local electric field in the crystals. Definitely, these interactions are perturbed as the dimensionality of the polymer ferroelectrics goes down to the lowest possible range. As a consequence, the crystal orientations are varied that eventually influences the functional properties of the material. In the bulk form, P(VDF-TrFE, 70:30) exhibited the first-order ferroelectric to paraelectric phase transition temperature
6. Polarization switching kinetics for nanoscale ferroelectrics
Electric polarization is the first-order framework of ferroelectric transitions, whose non-zero value apprehends the ferroelectric phase from the paraelectric one. The phenomenon of macroscopic polarization reversal with the external field stress is termed polarization switching. The kinetics for the same was contrasting for the lower-dimensional system compared to its bulk counterpart. Ferroelectric materials including bulk ceramics, spin-coated epitaxial oxide thin film or the Langmuir–Blodgett polymer thin films, consist of widely distributed domains. Earlier studies have shown that polarization switching is a complex inhomogeneous phenomenon involving domain nucleation and growth. This process can be realized in terms of Kolmogorov–Avrami framework of inhomogeneous phase transformation, [72] where polarization is associated with the lower energy phase. At the macroscopic level, typically two frameworks have been observed in partially polarized ferroelectric materials: (a) the whole material may experience an identical polarization or (b) the presence of spatial inhomogeneous polarization. The second situation is practically observed in ferroelectric P(VDF-TrFE) thin films. Devonshire was the first scientist to develop a theory on polarization switching on barium titanate ceramics system based on Landau mean-field phase transition [73]. Later on, the theory was improved with the consideration of Ginzburg spatial inhomogeneity framework and termed as Landua–Ginzburg–Devonshire (LGD) theory [5, 74]. According to this theory, the free energy for macroscopic polarization which is considered as order parameter is expanded as Eq. (4).
where α, β and γ are the Landau coefficients and
In the computed P–E relation (Figure 3), the author theoretically explained an unstable region between point a and b and proposed that the polarization switching as a consequence of lowering the free energy of the system. Nevertheless, a gap always persists between the theoretical and experimental values. For example, the field for minimal polarization was computed in the order of magnitude in GV/m while it is typically 50 MV/m, as verified experimentally. The explanation of polarization switching based on nucleation and multidomain [75, 76], is labeled as
However, the nanosized polymer ferroelectric P(VDF-TrFE) LB thin films (within the critical thickness) exhibited a critical behavior, a homogeneous non-domain switching of polarization is observed [5]. Gaynutdinov et al. [71] demonstrated that polarization switching kinetics for 54 nm thick film of P(VDF-TrFE) copolymer were subjectively different from the 18 nm thick film. While bulk-like properties exhibited the nucleation and domain growth as the cause of polarization switching, 18 nm thick film exhibited purely intrinsic switching kinetics with a true threshold field. Vizdrik et al. [76] simulated the switching kinetics in P(VDF-TrFE) LB film with thickness of 30 monolayer. It was observed that the film experienced a pronounced slowing of polarization switching over six orders of magnitude in close proximity of coercive field which is distinct from the extrinsic switching that lacks true coercive field with increased field or temperature. The extrinsic switching is associated with the activation of nucleation and is a function of frequency. If the nucleation is non-existing, a very high coercive field is required to obtain the uniform polarization in ferroelectric crystal ideally, typically known as intrinsic switching and the associated threshold field is known as the intrinsic coercive field. Also, the intrinsic switching is not possible below the intrinsic coercive field as the constituent crystal dipoles are exceedingly harmonized and they tend to switch coherently or not at all. This type of switching is specifically observed in ultrathin P(VDF-TrFE) LB films. The reduced thickness of LB films apparently takes the edge off nucleation volume and therefore prohibits the occurrence of extrinsic switching. Notably, intrinsic switching process takes larger time (>1 s) as compared to extrinsic switching (works in microseconds) observed in thicker films and at lower field. Paramonova et al. [77] validated the intrinsic homogenous switching in PVDF/PVDF-TrFE Langmuir–Blodgett (LB) films using the molecular dynamic simulation method. Further, the intrinsic coercive field is independent of film thickness in PVDF-based LB film below ∼15 nm, evincing the absence of finite size scaling below 15 nm [78, 79]. However, critical thickness for the intrinsic switching may vary in different polymer films because of diverse molecular structures. Theoretical modeling is a constructing way in guiding research for the dimensional effects in ferroelectricity. The nanoscale ferroelectrics constituted the switching kinetics contesting between extrinsic and intrinsic switching mechanism. These mechanisms are associated with the film thickness, as the film thickness increases, domain mechanism carry the way, else the nucleation-independent switching mechanism is endured [80].
7. Summary and future outlook
Ferroelectrics with reduced dimension has exciting applications in modern electronics system, especially in medical engineering and material technologies [81]. The first challenge conveyed by nanoscale ferroelectrics for device application is the stability of ferroelectric properties at the desired ultralow-dimensional range. For the last few decades, tremendous effort, both theoretically and experimentally have been implied for finding stable ferroelectricity in nanoparticles at their maximum reduced dimensions. However, setting aside the academic cliché, the real scenario probably deals with the lacking of crucial steps toward the real-mass commercialization of nanoscale ferroelectrics. The science and technology of nano and ultra-nanoscale ferroelectrics is in infant stage. Numerous fundamental issues are still unsolved hampering the real-mass commercialization. It is expected that with the proper selection of material-system, minimizing intrinsic and extrinsic effects and the advancement in nanoscale characterization techniques, the possibility of scaling and size-effects could be minimized.
This chapter dealt with the ferroelectric phenomena emphasizing important functional parameters, such as phase transition temperature (
Acknowledgments
All authors gratefully acknowledge the financial support from the KIRAN Division, Ministry of Science and Technology, Department of Science and Technology (DST), Government of India through Project No. SR/WOS-A/PM-75/2018 (G) and Science and Engineering Research Board (SERB), Department of Science and Technology (DST), Government of India through Project No. EMR/2016/005281.
Conflict of interest
The authors declare that the research was conducted in the absence of any commercial or financial relationships that could be constructed as a potential conflict of interest.
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