\r\n\tBook, “Mites, Ticks and Humans", is written by keeping in vision non-availability of any standard text dealing in different aspects of acarology at one place. Separate chapters in this book are devoted to medical importance of mites and ticks; ectoparasites, endoparasites and disease transmitting mites; classification, biology and epidemiology of dust mites; manifestations, diagnostics and preventions of dust mites allergy; ticks transmission of disease causing pathogens; and measures to mitigate mites and ticks. Book will stimulate interest in the readers for more information about different mites and ticks affecting publics. The knowledge contained in the book may prove as best material for graduate and post-graduate level courses, teachers and researchers in entomology, pestss control advisors, professional entomologists, pesticide industry managers, policy planners, and other experts having interest in mites and ticks.
",isbn:null,printIsbn:"979-953-307-X-X",pdfIsbn:null,doi:null,price:0,priceEur:0,priceUsd:0,slug:null,numberOfPages:0,isOpenForSubmission:!1,isSalesforceBook:!1,hash:"1ab684433f948520e8e90a2e74e2801a",bookSignature:"Dr. Muhammad Sarwar",publishedDate:null,coverURL:"https://cdn.intechopen.com/books/images_new/8964.jpg",keywords:"Basic biology, Diversity of lifestyles, Scabies, Mange, Ecosystem, Soil mite, Dust mites allergy, Asthma, Vectors, Dispersal or spreading modes, Pest management, Detection and survey",numberOfDownloads:null,numberOfWosCitations:0,numberOfCrossrefCitations:null,numberOfDimensionsCitations:null,numberOfTotalCitations:null,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"March 28th 2019",dateEndSecondStepPublish:"September 16th 2019",dateEndThirdStepPublish:"November 15th 2019",dateEndFourthStepPublish:"February 3rd 2020",dateEndFifthStepPublish:"April 3rd 2020",remainingDaysToSecondStep:"3 years",secondStepPassed:!0,currentStepOfPublishingProcess:5,editedByType:null,kuFlag:!1,biosketch:null,coeditorOneBiosketch:null,coeditorTwoBiosketch:null,coeditorThreeBiosketch:null,coeditorFourBiosketch:null,coeditorFiveBiosketch:null,editors:[{id:"272992",title:"Dr.",name:"Muhammad",middleName:null,surname:"Sarwar",slug:"muhammad-sarwar",fullName:"Muhammad Sarwar",profilePictureURL:"https://mts.intechopen.com/storage/users/272992/images/system/272992.jpeg",biography:"Dr. Muhammad Sarwar, Principal Scientist, is in his thirtieth year of service with the Department of Agriculture, Government of Punjab. He is also currently working for the Pakistan Atomic Energy Commission. He completed his post doctorate in 2008, funded by the Higher Education Commission of Pakistan from the Institute of Plant Protection in the Chinese Academy of Agricultural Sciences, Beijing, China. He has several hundred published papers to his credit and is recipient of the Shield award, letters of appreciation, and certificates of performance from faculty members of the Chinese Academy of Agricultural Sciences, Beijing, China. In 2010, the Zoological Society of Pakistan presented him with the Prof. Dr. Mirza Azhar Beg Gold Medal. In 2011, the Pakistan Council for Science and Technology awarded him a Research Productivity Award.\n\nHis research activities focus on integrated pest management for rice, cotton, chickpea, and Brassica crops; predatory mites, ladybird beetles, Chrysoperla, Trichogramma, and parasitoids of fruit flies culturing as bio-control agents; integrated management of fruit flies and mosquitos; and other arthropod pest control methodologies. He has also researched vertebrate pest control, especially controls of rodents in field crops and storage. He was the first to explore thirty-six new species of stored grain mites belonging to eight genera, including Forcellinia, Lackerbaueria, Acotyledon, Caloglyphus, and Troupeauia in the Acaridae family; and Capronomoia, Histiostoma, and Glyphanoetus in the Histiostomatidae family. He also planned and designed research trials on the integrated management of cotton leaf curl virus (CLCV), pest scouting, pest monitoring, and forecasting. He conducted training of progressive farmers and field staff, and provided advisory services to the farmers regarding plant protection practices. He also trained pesticide dealers on the proper handling, distribution, and storing of pesticides.\n\nUnder a coordinated research program, Dr. Sarwar collaborated with other institutes to trace resistance sources for cotton, rice, gram, rapeseed, mustard plants, and stored cereals and pulses. He has supervised post-graduate research and is an external examiner for post-graduate studies. He has also organized various workshops, served as a reviewer for scientific journals, and is a member of various working committees. He is responsible for opening up a new avenue on rearing of predatory mites as bio-control agents of insects and mites pests in greenhouse and field crops.\n\t\nDr. Sarwar is an approved supervisor with the Higher Education Commission (HEC) of Pakistan. He completed a course in Basic Management organized by the Pakistan Institute of Engineering and Applied Sciences (PIEAS), Islamabad, in 2011. He has also completed trainings in Beijing, Bangkok, Havana, and Vienna. 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1. Introduction
\n
Since invention of solid-state electric junctions, charge carrier distribution has become the primary requirement of electronic device design to achieve desirable device performance. Typically, a spatial distribution of charge carriers in semiconductor devices is created by introduction of electronic impurity atoms with particular electron configuration allowing to donate a free electron to the host semiconductor (donor impurity) or to trap a valence electron (acceptor impurity) from the host material. Thus, the host semiconductor with donor impurity atoms has become a negative-charge (electrons) conductor and is called n-type. The host semiconductor with acceptor impurity atoms has become a positive-charge (holes) conductor and is called p-type. Typical semiconductor devices have concentration of impurity atoms in a range of 1015–1021/cm3, which is less than 1 % of total number of atoms. Defects and atom vacancy often behave like impurity atoms.
\n
Early days, charge carrier distribution was derived from spatial distributions of impurity atoms in semiconductor materials. Secondary ion mass spectrometry (SIMS) has been used to obtain a depth distribution profile of impurity atoms in semiconductor materials by sputtering with high-energy ions. As modern high-performance Si devices such as complementary metal-oxide-semiconductor (CMOS) transistors are less than 100 nm in size, and have complex material structures, the 1D SIMS profiling becomes inadequate. Figure 1 shows a typical structure of a metal-oxide-semiconductor field effect transistor (MOSFET) consisting of gate, channel, and source/drain regions with high impurity concentrations.
\n
Figure 1.
(a) A sketch of a MOSFET device in a cross-section. (b) 3D view of a charge distribution in a MOSFET measured by the STM gap modulation method. Charge concentration is emphasized by color: blue color for low charge concentration in p-Si channel and red color for high charge concentration in source (S), drain (D), and gate (G).
\n
Recently, a new technique of tree-dimensional (3D) atom mapping, which is called atom probe tomography, was introduced based on counting of atom ions ejected from a needle-like device specimen [1–6]. Aside from complexity of the sample preparation and 3D data reconstruction of the atom probe technique, the charge carrier distribution is assumed to be equal to that of impurity atoms. However, the carrier distribution deviates significantly from the impurity atom distribution as a result of internal electric field at material interfaces, trapped charges in oxide, and fractional activation of impurity atoms in areas of high impurity concentration. Therefore, techniques allowing to measure local distribution of charge carriers within the electronic device interior have been a focus of attention from scientific and practical points of view.
\n
Significant attention has been addressed to high-spatial resolution analysis of modern sub-100-nm electronic devices, nanowire devices which meet miniaturization to less than 10 nm in order to achieve new functions and energy-efficient operation. Last decade, various techniques have been developed for charge carrier mapping. A common high-resolution imaging technique, scanning electron microscopy (SEM), has been upgraded with an energy-filtering option, allowing us to obtain the image contrast as a function of the surface electrostatic potential [7–10].
\n
Scanning probe techniques are an important tool for local probing of electric properties and have played important roles in scientific research on electronic materials and in evaluations of device structures in fabrication processes. Scanning probe microscopy (SPM) techniques are based on the ability to position a sharp probe electrode in very close proximity with high precision to the sample surface under investigation [11]. Different physical quantities can be measured by the probe including electric tunneling current, atomic and electrostatic forces, or other types of probe-sample interactions. By moving the probe laterally over the sample surface and performing measurements at different locations, two-dimensional distributions of surface atomic structure, electric current, electrostatic potential, or other properties can be obtained.
\n
SPM techniques employed in local electrical measurements are atomic force microscopy with a conductive probe (c-AFM) [12], scanning spreading resistance microscopy (SSRM) [13], scanning Kelvin probe microscopy (SKPM) [14], and scanning tunneling microscopy (STM) [15]. These scanning probe techniques create two-dimensional (2D) maps of variations in the surface electric potential or electric current density along a cross-section of a semiconductor device, when the surface states, defects, adsorbates, and foreign particles on the cross-sectional surface do not affect the initial charge carrier distribution. In majority of cases, certain surface treatments of the cross-sectional surface are applied prior to measurements to eliminate undesirable surface effects. Quantitative impurity profiles by SSRM and SKPM have been demonstrated for high impurity concentrations, where a spatial resolution on the order of the probe tip radius (~5 nm) was obtained under optimum conditions [16–19].
\n
STM has been used for impurity distribution measurements in Si devices by analyzing current-voltage spectra [20–23]. To derive quantitatively variation in the charge carrier distribution from STM measurements, one must analyze complex dependence of the tunneling current on the bias voltage, the tunneling gap, and the band-bending potential beneath the STM probe tip on a semiconductor surface. Thus, simulations of STM operation are an essential part of the data analysis.
\n
In this chapter, we focus on advanced STM-based spectroscopy techniques as nanoscale methods for two-dimensional (2D) charge carrier analysis. It represents original development of scanning probe microscopy methods for Si device metrology with ultimate spatial resolution. We describe the principles of the advanced STM methods and give representative examples of applications to nanoscale analysis of Si CMOS devices and nanowires. Advantages, difficulties, and limitations of the advanced STM modes will be discussed in comparison with other techniques used in a field of device metrology.
\n
The chapter begins with description of device cross-section preparation methods and essential features of STM measurements on a semiconductor surface. Measurement principles of original STM-based techniques and application examples will be given. Current development in STM simulations will be outlined. Prospects toward research in new 2D materials will be elaborated.
\n
\n
2. Preparation of Si device cross-sections
\n
\nFigure 2 shows a common way for making solid crystal cross-sections. The process includes a number of steps. (1) Cleavage and/or dicing of a thin crystal wafer are used to define a desired location of the cross-sectional plane. (2) Chemical-mechanical planarization-polishing (CMP) and focus ion beam (FIB) techniques are applied to tune location of the cross-sectional plane with a sub-micrometer accuracy. (3) Chemical and electric passivation of the cross-sectional Si surface by hydrogenation or thin oxide is carried out to prevent distortion of original charge carrier distributions by surface states and contamination.
\n
Figure 2.
(a) Fabrication of a device cross-section for STM measurements. (b)–(c) STM images (a set-point: 300 pA, 2.0 V) of an oxide-passivated Si surface before (b) and after (c) 1 ML C60 film formation. Color scale is 0.8 nm (b) and 2.5 nm (c). Insert shows an image of 10 C60 molecules.
\n
Chemical and electric passivation of solid surfaces is the subject of extended research in catalysis to control on charge transfer process and chemical reactions in solid-liquid and solid-gas interfaces [24]. Moreover, chemical and electric passivation of semiconductor surfaces are a basic process in fabrication of modern Si devices, enabling to reduce off-state leakage current and photocarrier losses in solar cells [25]. Without passivation treatment, silicon surfaces have pronounced bands of surface states, which dominate the contrast of the STM images, so that it becomes difficult to characterize the underlying electrical interfaces. Therefore, passivation of Si surfaces by hydrogenation or oxidation has been employed in order to reproducibly prepare uniform surfaces of device cross-sections and to obtain very low density of surface states.
\n
2.1. Passivation by hydrogenation
\n
Hydrogenation of Si surfaces is achieved by etching in fluoric acid solutions. Etching removes the native Si oxide and terminates the Si dangling bonds with hydrogen atoms making a stable, passivated surface with very low density of surface states in the Si band gap [26]. A number of investigations have confirmed that tunneling spectra of such stabilized Si surfaces show variation with dopant type and concentration due to passivation of dangling bond states and the suppression of surface states [27–32].
\n\n
Si(111) surfaces can be atomically flattened by wet treatment in NH4F aqueous solutions [33]. In the procedure, the samples were dipped in a 5% HF solution to remove the residual oxide layer, then immersed in a 40% NH4F solution at room temperature, and rinsed in ultrapure water for 1 min. This treatment renders the Si surface mono-hydride, well suited for STM analysis. In this treatment, hydrogen also reacts with near-surface impurity atoms forming electrically inactive complexes, thus, changing the initial charge distribution. To reactivate the impurity atoms, heating of the samples around 200–250°C is necessary [33, 34].
\n
To prepare atomically flat Si(001) surfaces, a combined process is adopted, which consists of wet treatment using a fluoric acid solution and subsequent annealing in H2 atmosphere at ~600°C and a pressure of ~2 × 103 Pa [35]. The authors showed the formation of an atomically flat Si(001) surface that have well-ordered step-terrace structures in the active device area. The flattening was attributed to the enhanced migration of Si atoms when anisotropic etching was suppressed.
\n
\n
2.2. Passivation by an ultrathin oxide
\n
Hydrogenation of Si surfaces may not always be compatible with processing steps in a particular application, as Si surface etching usually introduces topographic contrast due to etching rate dependence on doping concentration, crystal orientation, and material composition. An alternative way to passivate Si surface is oxidation. The passivation of Si surfaces by controlled growth of ultra-thin oxide layer relies on the layer-by-layer oxidation kinetics at low oxygen pressure [36–38]. We adopted the preparation of cross-sectional surfaces of Si devices as follows [39, 40]. First, dicing and ultra-fine polishing are used to expose either (100) or (110) surfaces of the device. The polished surfaces are cleaned by few cycles of etching in dilute fluoric acid solution and wet-oxidation in H2SO4:H2O2 (3:1) solution to remove a damage layer. Finally, ultra-thin (~0.3 nm) oxide layer is grown at ~600°C under an O2 pressure of 3 × 10−3 Pa following etch-cleaning in HF:HCl (1:19). This procedure left a flat surface without any ordered structure as seen in Figure 2(b), where the atomically flat terraces are separated by atomic steps of 0.24–0.27 nm in height. The oxide thickness was 0.32–0.35 nm as determined by x-ray photoelectron spectroscopy, and by scanning reflection electron microscopy (SREM). The low-pressure oxidation process results in a residual density of surface state traps of ~1012 cm−2 for Si(100) surfaces [24, 41, 42], which is suitable for STM spectroscopy analysis.
\n
\n
2.3. Formation of C60 monolayer films
\n
When a well-defined mono-molecular layer is prepared on a passivated surface, its molecular level can be utilized to quantitatively analyze the electrical properties of the underlying substrate. We call this method as a molecule-assisted spectroscopy. For this purpose, monomolecular thick films of C60 (fullerene) were formed by vapor sublimation of C60 to the oxidized Si surfaces to a thickness of 3–5 molecular layers. The excess of C60 layers was removed by sample heating at 170–190°C for 10 min. Because electrostatic interaction between the molecule and the underlying Si is stronger than the Van der Waals interaction between molecules within the film, a C60 molecules adjacent to the Si surface remain at high coverage (~80%) as seen in Figure 2(c) [41].
\n
\n
\n
3. Tunneling microscopy: basics
\n
The STM operation principle is based on quantum mechanical phenomenon—electron tunneling through a potential barrier formed by a gap between the outermost atoms on the metal tip and the sample. When the gap is about 1 nm or less, electrons from the STM tip can penetrate into the sample with certain probability owing to the wave nature of the quantum particle.
\n
Under external electric field, electron tunneling creates a measurable electric current, the tunneling current. In the single particle approximation, the tunneling current density is given by a difference in the particle flow across the gap from the STM tip and that from the semiconductor and is expressed as an integral over particle’s energy
where T(Z, E, V), the transmission factor, is a function of gap width (Z), electron energy (E), and external gap voltage (Vgap). ρtip(E) and ρsample(E) are the density of electron states at the surface of the STM tip and the sample, respectively. f(E) is the Fermi function describing which energy states are occupied with electrons.
\n
Here, we outline the important features of the STM technique essential for analysis of charge carrier distribution in semiconductors. They are\n
tunneling barrier shape,
sharing of applied voltage between the tunnel gap and a surface band-bending region, and
surface charge density in the semiconductor beneath the STM probe electrode.
\n
Figure 3.
The principle of scanning tunneling microscopy of a semiconductor. (a) An STM setup, (b) an energy band diagram of a tunnel junction, and (c) a charge balance diagram.
\n
The tunneling barrier shape determines the electron transmission factor and the value of the tunneling current. Figure 3 shows an STM measurements setup and an energy band diagram of an ideal STM junction for n-type Si. Rectangular shape of the tunneling barrier is used in simple STM models. The actual potential barrier profile is different because of image potential lowering (Δϕ) owing to strong Coulomb interaction between charge and image charge in conductive materials [43–45]. Also, the tunneling gap may include an insulating layer such as ultrathin oxide and a molecular film with different dielectric properties. Therefore, the tunneling electrons experience an effective potential barrier of a barrier height (BH) given by
BH=ΦM+EF-qVgap/2-Δϕ,E2
\n
where ΦM is the work function of the metal tip and EF is the Fermi energy of the semiconductor, q is the elementary charge. For electron energy smaller than BH, the transmission factor is approximated by [46].
TEV=exp-α∙BH∙Z,E3
\n
The tunneling constant α = 10.2 when the gap width is in units of nanometer and BH – in eV.
\n\n
Because electric charge density in semiconductors is lower than that in metals, applied electric field penetrates deep beneath the semiconductor surface. To maintain the charge neutrality, a band-bending region is created beneath the STM probe. The applied voltage VS is shared between the gap and the band-bending region and is given by
VS=Vgap+Vbb+ϕMS,E4
\n
where last term ϕMS = (ΦM − EF) is an electrostatic potential difference between the work function of the STM tip and the semiconductor Fermi energy, and χ is the electron affinity of the semiconductor. In thermal equilibrium and VS = 0 , the charge neutrality is conserved, and the electric charge in the STM tip (QM) is equal to the local electric charge at the semiconductor surface beneath the STM tip. At VS = 0, the band-bending region is created owing to the electrostatic potential difference ϕMS. Figure 3 illustrates the case when an electron depletion region is formed for n-type Si under an external positive bias voltage VS > 0 to the sample. For n-Si, the surface charge (QSS) includes positive charge of impurity atoms (QN) and mobile carriers (holes) (Q+):
++QN,5QM=QSS=QE5
\n
According to the Gauss law [43, 47, 48], the voltage across the gap is given by
Vgap=QSSϵ0∙Z0,E6
\n
where ∈0, and ∈Si are the permittivity of the vacuum gap and Si, respectively. The depth of the band-bending region (w) depends on the electric field screening by the electric charge in the semiconductor and is given by
w≅2ϵSiVbbQSS.E7
\n
It is straightforward that the tunneling current strongly depends on the local electric charge at the semiconductor surface. When there were surface states and interface traps, these trapped charges would alter the initial charge carrier distribution, and great care must be taken to prepare clean, well-defined cross-sectional surfaces. In fact, conventional furnace oxidation produces a gap-state density of about 1010 cm−2 for Si(100) and less than 1012 cm−2 for Si(111) surfaces [47]. Low-pressure oxidation below 600°C results in a density of ~1012 cm−2 for Si(100) surfaces [26, 41, 42]. The surface oxidation effectively reduces density of surface states on Si surfaces, making that the current behavior becomes dependent on charge carrier concentration in the Si bulk beneath the STM probe.
\n
Topographic STM images of a sample surface are formed when the STM probe is moved along the surface while keeping pre-determined tunneling current value (Itun) at an applied voltage (VS) by adjusting the gap width with a piezoelectric scanning unit. The STM technique offers ultimate spatial resolution down to a sub-nanometer range because tunneling current is strongly localized around the outermost atom of the STM tip owing to exponential current decay with the tip-sample distance. Three advanced STM-based modes discussed below rely on measurements and analysis of the tunneling current and, thus, offer high spatial resolution. Details of the SPM system construction and operation have been reviewed in original papers and textbooks [11].
\n
\n
4. Advanced STM modes
\n
To study charge carrier distribution in semiconductor devices, we describe three STM-based techniques: a vacuum gap modulation method, a molecule-assisted probing method, and a dual-imaging method.
\n
4.1. Vacuum gap modulation method
\n
A vibrating electrode technique was used to measure the surface potential on solid surfaces by using the Kelvin method [49]. Present-day noncontact atomic force microscopy (nc-AFM) uses vibrating probes for detecting atomic, electrostatic and magnetic forces [50]. In metals, mechanical modulation of the tunnel barrier has been applied as a method to evaluate local work function of the sample [46, 51–54]. In semiconductors, a model of STM junction considering both transparency of the tunnel barrier and the band-bending potential was elaborated [22, 23].
\n
When the STM probe vibrates normal to the sample surface, the gap width changes as
Z=Z0-dz∙sinωt,E8
\n
where ω = 2π ∙ f is the angular frequency, dz is an amplitude of the vibration. For small vibration amplitude, dz ≪ Z0, the transmission factor periodically changes with the time-dependent change of both the gap width and the gap voltage. When the STM probe approaches toward the surface, Vgap is reduced while increasing the surface potential (Vbb). A change of the gap voltage Vgap is related to the mean charge QSS at the surface by the Gauss law [43, 47, 48] and is expressed as
dVgap=-dψ=-QSSϵ0∙dz,E9
\n
where dψ is a change of the band-bending potential.
\n
To determine the tunneling current response (dI) to a time-dependent variation of the gap width, the tunneling current is expressed as
Itunωt=I0+dI1∙sinωt,E10
\n
where I0 is the mean tunneling current. In the linear approximation [46], the current response is dominated by variation of the mean transparency of the vacuum gap. Thus, in-phase amplitude of the tunneling current response is given as
dI1∝I0∙QSSϵ0∙dz.E11
\n
In our experiments, the mean tunneling current I0 is held constant; thus, the quantity (dI1/dz) is proportional to the local charge density at the surface beneath the STM tip under the bias voltage. There is a 90°-phase-shifted current component representing a displacement current owing to change in the STM junction capacitance as discussed in details in Reference [55]. We used the capacitive signal for fine-tuning of the signal phase in the measurements of in-phase current by a lock-in technique.
\n
In the model above, terms due to the shape of the tunnel barrier and capacitance effects associated with modulation of the band-bending region beneath the STM probe are neglected, albeit the effects are essential at high frequency and low impurity concentration [55].
\n
When the modulation of band-bending region is taken into account, the tunneling current response is given by two terms (Appendix A)
dIdz∝I0∙K3;K3=αBH-αZ04BH+β∙QSSϵ0.E12
\n
The first term represents the contribution of the gap width modulation, and the second term accounts for variations of Vgap and Vbb .
\n
It is constructive to take a look at origin of charge QSS for n-type and p-type Si under positive bias voltage. In n-Si in Figure 3, the electric field from the STM probe repels mobile electrons deep into the bulk creating a surface depletion region, and QSS = QN + Q+ ≈ QN > 0. The larger the bias voltage, the larger the amount of positive charge accumulated beneath the STM probe. As a consequence, the amplitude of the current response (dI) depends predominantly on density of accumulated positive charge. On the contrary, in p-type Si under the same polarity bias, the electric field attracts mobile majority carriers (holes) to the surface reducing amount of negative charge of acceptor impurities (QP) beneath the STM probe. As a consequence, the amplitude of the current response (dI) depends predominantly on small amount of accumulated positive charge, and QSS = QP + Q+ ≈ Q+. At the position of electrical p-n junction, the balance of positive and negative charges exists, and QSS ≈ 0. Thus, we are able to derive position of electrical p-n junction through analysis of the (dI/dz) profiles. In addition, detection of charge centres near the Si surface at a depth of ~1 nm has been reported for epitaxial Si layers [56].
\n
Experimentally, differential tunneling current (dI/dZ) maps were obtained by vibrating the STM probe normal to the sample surface. The STM probe-sample gap was vibrated at a frequency of 12–50 kHz and an amplitude of 20–50 pm while keeping the vacuum gap at constant mean tunneling current I0 (the constant current mode). In-phase current response dI was measured with a lock-in amplifier at each point in the topographical image. The vibration frequency was selected sufficiently larger than the feedback circuit bandwidth (~10 kHz) and away from the electromechanical resonances of the STM measurement system.
\n
\n
\n
4.2. Molecule-assisted probing method
\n
The ability of specific molecules to selective reactions on the surface is well known in catalysis. Recently, functionalization of SPM probes by attaching functional groups to achieve the chemical selectivity in recognition of DNA sequences and biological molecules has been performed, for example, see [57–59].
\n
The method described here is different. A molecule-assisted probing method makes use of a discrete energy level of an adsorbed molecule as a marker of the local Fermi energy. It takes advantage of resonant electron tunneling (RET) to monitor the energy level of the marker molecule, such as fullerene C60, introduced into a tunneling barrier between the STM probe and the oxidized Si surface. The fact that the C60-derived conductance peaks shift in energy depending on dopant concentration in the underlying substrate makes this technique usable as a probing method of the charge carrier profiling on semiconductors [39, 41, 60]. The C60 molecule was selected as it satisfies the selection criteria: small size, chemical stability, and an energy position of molecular orbital outside of the Si energy band gap.
\n
A model of a double-barrier junction (DBJ) was elaborated based on the theory of planar resonant tunnel diodes [61] and alignment of molecular states [62]. Figure 4(a) and Figure 4(b) show the experimental setup and an energy band diagram of an ideal DBJ consisting of the vacuum gap (B1), the C60 layer and the thin oxide (B2) under a resonant injection bias VRET. EA is the electron affinity of the C60 layer, and Ei is the Fermi energy for intrinsic Si. At the resonance condition, the Fermi energy of the STM tip aligns with the lowest unoccupied molecular orbital (LUMO), and thus, the strength of electric field in the vacuum gap is given by F = (ΦM − EA)/Z0. For an ideal oxide and neutrality of C60, continuity of the electric displacement is preserved across the DBJ, and the RET voltage is given by
VRET=∈SiF∙Z0+dC60ϵC60+doxϵox+Vbb,E13
\n
where d60 and dox are the thickness of C60 molecule and the oxide, respectively. ∈C60 and ∈ox are the permittivity of C60 and oxide, respectively. Vbb voltage is obtained as a function of the electric field F at the Si surface by solving the 3D Poisson equation at quasi-equilibrium.
\n
To measure the RET voltage, mono-molecular fullerene films were prepared by vapor sublimation of C60 to the oxidized Si surfaces at room temperature followed by re-evaporation of excess molecules as described in Section 2.3. Differential conductance (dI/dV) − V spectra in Figure 4(c) were obtained at a constant probe-sample gap by using a lock-in technique where a small ac voltage (20 mVpp, 50 kHz) was superimposed on the sample bias voltage. The initial tunneling conditions were set with a tunneling current of 200 pA at a set-point voltage of 2.5 V. Each (dI/dV) − V spectrum was fitted to Lorentzian function to determine a voltage of the C60-derived conductance peak, the RET voltage [41, 64]. For high conductance of the tunnel gap, the STM tip is close to the molecule layer, and another transport mechanism, the single electron tunneling [66], becomes apparent and hinders the RET voltage detection. Thus, optimization of the gap width is required.
\n
Figure 4.
Molecule-assisted probing method. (a) A setup. (b) An energy band diagram of a double-barrier junction under the resonance conditions. B1 is the tunneling gap, and B2 is thin oxide. (c) (dI/dV) spectra of C60 on p-type Si substrates with a boron concentration of 8 × 1014 cm− 3 (curve 1), 4 × 1015 cm− 3(curve 2), 3 × 1018 cm− 3(curve 3), and without C60. (d) RET voltage as a function of the Si Fermi energy (EF − Ei) from measurements (symbols) and 3D numerical calculations for oxide thickness of 0.3 nm (broken line) and 0.7 nm (solid line) according to Eq. (13) and Reference [41].
\n
The measured RET voltage obtained for uniformly doped Si wafers with different dopant concentrations is shown in Figure 4(d). The data are well reproduced by the numerical calculations according to Eq. (13) where STM probe emitter was modeled as a cone with a hemispherical end and a radius of curvature of 10 nm, and Z0 = 1 nm, dC60 = 1 nm , and dox = 0.3 nm, ΦM = 4.5 eV for W(111) probes and EA = 2.6 eV. The good agreement between the calculated RET voltage and the experimental data for uniform-doped wafers verifies the calibration relationship for Si [41, 63].
\n
The spatial resolution of the method is restricted to the size of the marker molecule and to the electric field penetration length. It has been demonstrated by the (dI/dV) mapping that the RET peaks are localized within the C60 core (~1 nm) due to their origin in resonant tunneling mediated by one lowest unoccupied molecular orbital (LUMO+1) of C60 [41]. Since the LUMO+1 was localized at the pentagonal rings [65] and C60 molecule rotates at room temperature, the observed peak intensity represents the orientation-averaged orbital conductance of C60. The estimate of the penetration depth is a Debye length of ~1.5 nm for p-Si under large positive bias, though the length depends on the dopant concentration for n-Si [41, 63].
\n
\n
\n
4.3. A dual-imaging method
\n
STM technique is limited to conductive surfaces and is inapplicable to the imaging of novel device structures, including insulator surfaces such as silicon-on-insulator (SOI) devices. Strong interest to such measurements is stimulated by the fact that discrete dopant distribution enables attractive applications such as quantum computing [67] and single-electron devices [68]. Therefore, a dual-imaging method was developed to enable simultaneous measurements of electric current and interaction force acting on the scanning probe. It was achieved by attaching an STM metal tip to a special force sensor [67–76].
\n
\nFigure 5 shows the experimental setup for the simultaneous measurement of tunneling current (Itun) and force between the metal probe tip and the Si surface. In our technique, the interaction force gradient between the metal probe tip and the surface was detected as a shift in the resonance frequency (Δf) of a quartz length extension resonator (qLER) which vibrated at ~1 MHz (Q factor ~50,000) with an amplitude of 0.05–0.3 nm [67–70]. The probe tips were made of a tungsten wire with a diameter of 10 μm. The wire was attached to the quartz resonator and sharpened by the focused ion beam technique (FIB). Typically, the probe tips had a diameter of Ø30 nm and the aspect ratio of more than 10, resulting in small stray capacitance. Detection of the frequency shift by electric means makes such sensors suitable for measurements in ultra-high vacuum environment and at different temperature, which are often required in nanomaterial and nanoscale device research.
\n
The advantages of our multimode scanning probe microscopy (MSPM) system are\n
tunneling current and forces acting on the probe tip are measured simultaneously at a mean probe-sample gap of about 1 nm in constant current (CC) or constant force (CF) operation modes;
small vibration amplitude (0.1–0.2 nm) enables us to drastically reduce the probe-sample gap, leading to better spatial resolution;
the sensitivity to electrostatic forces is increased at an optimal gap;
the force detection is performed in a noncontact manner, which is suitable for measurements of solid crystals and thin films.
\n
In the CC mode, a force gradient map is measured while the mean gap (Z0) maintains a set-point tunneling current. Typically, the measurement condition corresponds to a gap of approximately 1 nm, as estimated from the distance dependence of the tunneling current [72]. The spatial variation of the frequency shift (Δf) reflects variations in the interaction force caused by charge carriers, impurity charges, and surface imperfections as illustrated in Figure 5(b). When a donor is present in proximity to the STM tip, the attractive force acting on the tip increases owing to Coulomb interaction between the donor charge and the image charge induced in the STM tip, leading to measurable change in the Δf value [75, 76]. The interaction strength depends on the depth of the donor location and the electrostatic screening by mobile carriers. Experimentally, lateral extent of 5–10 nm and a detection depth of ~1 nm have been reported for phosphorus and boron atoms in Si [32, 33, 76]. Change in the interaction force on grains with different work function was employed for recognizing crystal orientation of sub-10-nm-size grains in nano-crystalline TiN films [77].
\n
Figure 5.
Dual-imaging method. (a) A measurement setup. (b) A sketch of interaction force acting on a vibrating STM probe. (c) (Itun-Z) and (Δf-Z) spectra showing ranges of repulsive interaction (1–2) and attractive Coulomb interaction (2–3) for an oxide-passivated Si(111) surface (a set-point: 30 pA, 2.0 V). (d) A measured (Δf-VS) spectrum at position 3(blue curve), and a result of fitting to Eq. (14) (red curve).
\n
In the CF mode, a tunneling current (Itun) map is measured while the mean gap (Z0) is maintained at a constant frequency shift. There are two ranges in distance dependences of ItunandΔf as indicated in Figure 5(c) for an oxide-passivated Si(111) surface. At short distances (range 1–2), repulsive interaction dominates, and current exponentially grows when the STM tip approaches the surface. At longer distances (range 2–3), the electrostatic Coulomb interaction dominates. There is an optimal distance indicated as position 2 in Figure 5(c) where the sensitivity to electrostatic force is maximum [72]. At this distance, the (Δf − VS) spectrum has the largest curvature.
\n\n
Under the applied voltage VS, the electrostatic force gradient between the probe tip and the sample is expressed according to the theory in References [73, 78] for small vibration amplitude
Δf∝∂F∂z=-12VS-CPD2∙∂2C∂z2,E14
\n
where C is the effective tip-sample capacitance. CPD, the contact potential difference, refers to the difference between the work function of the metal probe (ΦM) and the Fermi energy of the underlying Si (EF), and is given by
CPD=1qEF-ΦM,E15
\n
where q is the elementary charge. A local value of the CPD voltage, which is determined by local charge concentration in the underlying Si, can be obtained by fitting of the spectrum to Eq. (14). In the example in Figure 5(d), a CPD voltage of +0.8 V was obtained for an oxidized p-Si(111) surface. The CPD voltage mapping was employed in 2D analysis of the built-in potential in small Si MOSFET devices [79] and p-n junctions [72] showing the attainable spatial resolution better than 3 nm. Particular applications of the CF mode also include analysis of impurity distribution profiles from Itun maps measured at different bias voltage [80], non-uniform distribution of photocarrier in Si stripes [81], and nanoscale conductance switching in phase-change GeSbTe thin films [82].
\n
\n
\n
\n
5. Application examples
\n
\n
5.1. Channel length in small MOSFET
\n
For STM measurements, cross-sections of Si MOSFETs were prepared by ultra-fine polishing to expose (110) surfaces and were passivated by ultra-thin oxide layer as described in Section 2.2. Si n-type MOSFET with nominal gate lengths (LG) in the range of 20–150 nm were fabricated according to a process described in Reference [83]. The measurements were done with W(111) crystal probes in an ultrahigh vacuum (~4 × 10−9 Pa) at room temperature.
\n
Figure 6.
(a) Topographic image of a cross-section containing two small Si MOSFET devices. (b) A (dI/dZ) map of a device with a gate length of 31 nm (a set-point: 230 pA, 3.4 V, dz = 20 pm). (c)–(d) Line profiles measured at 12 nm depth beneath the gate electrodes showing the electric channel length (LS-D). (e) Profiles calculated by Eq. (12) for expected impurity distribution. (f) Measured electric channel length (symbols) as a function of gate length. Line is the calculation result.
\n
Topographic image of two small MOSFET is shown in Figure 6(a), where the gate electrodes are surrounded by two black cavities produced by sidewall oxide etching during the surface preparation. The source/drain (S/D) extensions on the left- and right-hand sides of the gate electrode are seen as bright stripes in the (dI/dZ) map in Figure 6(b). Depletion regions separate the S/D extensions from the p-type channel beneath the gate electrode and the Si bulk. The extension depth is ~18 nm as measured from the gate oxide. The electric channel length (LS − D) was determined as the distance between 2 minima in (dI/dZ) line profiles measured at a depth of 12 nm beneath the gate oxide as indicated in Figure 6(c, d). Calculated profiles of the K3 factor in Figure 6(e) reproduce the measured (dI/dZ) profiles, confirming that each minimum in (dI/dZ) signal represents the position of the electric p-n junction. LG was determined from STM topographs. Results summarized in Figure 6(f) give an overlap value of 6 ± 1 nm, which is in excellent agreement with a transverse straggle of 7 nm for an implanted ion energy of 25 keV. An accuracy of the channel measurements was about 1 nm at 3.4 V, while the measurements were affected by random positions of individual ionized dopant atoms in the extension regions.
\n\n
\n
\n
5.2. Super-junction devices fabricated by the channeling ion implantation
\n
The C60-assisted probing technique has been actually applied to quantitative analysis of charge carrier profiles on cross-sections of power MOSFET, where the precise control over the doping profile is essential to obtain low ON-state resistance and high breakdown voltage [39, 40]. Figure 7(a) depicts a schematic structure of a super-junction power MOSFET. Two p-type islands were formed by multiple boron ion implantations into the low-doped n-type epitaxial layer with a carrier density of ~1 × 1016 cm3. In Figure 7(b), we clearly see that two p-type islands are separately formed with the same peak concentrations, confirming the anticipated dopant concentration. Moreover, the experimental data revealed an extension of island 1 beyond the expected depth, which is attributed to a scatter-less travel of boron ions through Si crystal at high implantation energy, the ion channeling effect[84].
\n
Figure 7.
(a) Schematic structure of a super-junction device showing two p-Si islands made by boron ion implantation. (b) Depth profiles of the RET voltage along center of the device: measured data (symbols) taken with 20-nm steps. Profiles (lines) were calculated for the two boron density profiles shown in (c). Reproduced with the permission from Reference [39].
\n
\n
\n
5.3. Length-dependent resistivity of Si nanowires
\n
The ability of the dual-imaging method for characterization of modern silicon-on-insulator (SOI) devices is illustrated by analysis of the structure and electric conductance of SOI nanowires (NW) with different surface passivation. Note that the NW is the promising structure for sub-10-nm MOSFETs and for such functional devices as chemical sensors. Figure 8 shows high-resolution measurements of a Si NW with a cross-section area of 20 × 20 nm2 acquired at a set point of Δf = 0.6 Hz, dz = 95 pm, VS = − 1.5 V. We see in Figure 8(c) the current gradually decreases in the NW interior with the distance from the Si pad owing to the dependence of the NW resistivity on its length. We note that an apparent NW width in the current map is about 2-fold of that in the topograph. As the NW is protruded above the buried oxide (BOX) by 20 nm, a side surface of the sharp tip touches the NW as illustrated in the insert of Figure 8(c), and this results in a so-called “sidewall” current outside the Si NW body. The current value and fluctuations were reduced for the NW passivated with an ultrathin oxide layer compared to the hydrogen passivation. The tunneling current decreased within a distance of ~300 nm from the Si pad electrode for both types of surface termination. At the negative voltage, the tunneling current is defined by electrons traveling from large Si pad through the SOI nanowire, and the current value is determined by resistivity of the NW volume and the surface conduction. The macroscopic conduction model including the conductance contributions of the nanowire volume and the surface states confirmed the length-dependent conductance of thin Si nanowires [85].
\n
Figure 8.
(a) An experiment setup. (b) Topographic image of silicon-on-insulator nanowire with a cross-section of 20 × 20 nm2, and (c) corresponding current map acquired at -1.5 V and Δf = 0.6 Hz, dz = 95 pm. (d) Current profiles along A-A line for Si nanowires after hydrogen-passivation (curve 1), oxide passivation (curve 2), and along B-B line (curve 3). Adopted from Reference [85] (Copyright 2013 Trans. Mat. Res. Soc. Japan).
\n
\n
\n
5.4. Wavelength-dependent photocarrier distribution across strained Si stripes
\n
Photo-carrier generation in semiconductors is a fundamental process utilized in solar cells and photo-detectors. For reduced size of modern detectors, the role of structural elements in carrier accumulation and transport has been increasing [86]. In particular, photocarrier distribution on textured surfaces of Si can be a factor to improve the efficiency of solar cells. Analysis of spatial distribution of photocurrent (PC) in strained Si stripes under tilted illumination gives an insight into photocarrier behavior near the stripe edges with an effective spatial resolution of ~10 nm [81].
\n
\nFigure 9 shows the sample structure and the measurement setup, where inhomogeneous light intensity profile was created under tilted (50° off-normal) illumination and different light wavelength (λ). Strained Si stripes of 50–1000 nm in width and 300 nm in height were fabricated on Si(001) wafer, and separated by SiO2. The stripe surface was passivated by an ultrathin oxide as described in Section 2.2. The light intensity was mechanically modulated at frequency of ~3 kHz, and the PC signal was measured by a lock-in unit. Topographs and PC maps were measured by the dual-imaging method where the tip-sample gap was set by a set-point of Δf = 1.2 Hz, dz = 130 pm, and VS = − 0.8 V, using the CF mode.
\n\n
Topographic image in Figure 9(b) shows uniform surface of the Si stripe. The PC signal was not uniform, and large at a distance of ~50 nm from the stripe edge on the light illumination side, when stripes were illuminated with laser light and an intensity of 12 mW/cm2 as seen in Figure 9(c). Large PC signal at stripe edges was observed irrespective of the scanning directions, when light with λ = 405 and 364 nm was used as seen in line profiles in Figure 9(d, e). In contrast, illumination with red light (λ = 675 nm) produced uniform PC distribution. As the absorption depth in Si is ~11 nm for λ = 364 nm, ~130 nm for λ = 405 nm, and ~4000 nm for λ = 675 nm [87], the respective illumination produces different light intensity profiles. Calculated PC profiles in Figure 9(f) reproduced the observed PC distributions when a rectangular bar geometry, non-coherent light, and a photocarrier diffusion length of 100 nm were used [81].
\n
Figure 9.
(a) Photocurrent (PC) measurement setup. (b) A topograph and (c) corresponding PC map of a Si stripe under illumination with λ = 405 nm. (d)–(e) Measured line profiles of height (black lines) and PC (dotted lines) across the stripe edge under tilted illumination for two wavelengths (λ). (a set-point: Δf = 1.2 Hz, dZ = 130 pm, VS = − 0.8 V). (f) PC line profiles calculated for a rectangular bar exposed to light at top and side surfaces. Adopted from Reference [81] (Copyright 2012 The Japan Society of Applied Physics).
\n
We note that the relative intensity of a PC peak at a position of ~30 nm for λ = 364 nm is ~3.2-fold the signal in the stripe interior. Enhancement of light intensity by ~3.5-fold at strained Si stripe edges has been reported for λ = 364 nm [88, 89]. The enhancement mechanism may be related to increased photocarrier generation owing to interference of coherent laser light [81], narrowing of the Si energy gap under stress [90] or increase in the tunneling probability through electromagnetic field coupling to the sharp STM tip [91].
\n
\n
\n
\n
6. Simulations of tunneling current spectra
\n
STM has the capability to 2D impurity profiling by employing advanced STM methods as shown above. Although, accurate analysis of charge carrier distributions in actual 2D and 3D device structures has been a substantial challenge. STM tunneling current is a complex function of structural, material, and electronic parameters of the system consisting of a 3D probe tip and a semiconductor. On the basis of fundamental theory, there have been theoretical discussions of 1D and 2D treatments for the STM junction geometry. A 3D numerical simulator has been reported that solves the 3D potential distribution of the sample STM probe system and calculates the tunneling current, so-called the potential-based model [23, 92, 93]. However, to describe the precise physics of STM measurements, the charge carrier flow in the sample must be included, as evidenced by the NW measurements in Figure 8. Recently, new model evolves solving the charge carrier transport between a probe tip and a sample consistently with the current continuity equation, so-called the current-continuity model. The current-continuity model accounts for charge carrier transport between states in an STM probe and the conduction and the valence band of Si and was implemented on the basis of a technology computer-aided design (TCAD) semiconductor device simulator code [94]. It is a significant advancement in the field.
\n
An analysis based on the current-continuity model has been applied successfully to extracting impurity distribution profiles in a MOSFET from experimental current maps measured by the dual-imaging method [80], and for evaluating photocarrier dynamics in Si nanowires with a cross-section of 10 × 10 nm2 [95].
\n
The remaining challenge is to include the effect of single impurity scattering on charge carrier transport in nanoscale devices. The impurity scattering for a thin semiconductor wire has been solved using the 3D Green function approach and the numerical Monte-Carlo method [96]. An atomistic view into an impurity atom appearance in STM images has been elaborated within the framework of a self-consistent-charge density functional tight-binding method (SCCDFTB), for example, see [97, 98].
\n
\n
\n
7. Conclusion
\n
Advanced STM-based methods for 2D analysis of charge carrier distributions in semiconductor devices with high spatial resolution represent the substantial development of scanning probe microscopy. The described methods rely on detection and analysis of tunneling current which is strongly localized within an atomic dimension. This leads to significant improvement in the sensitivity and spatial resolution for measuring local electric characteristics of Si devices and nanowires, when effects of surface states are suppressed by adequate surface treatment.
\n
The gap modulation method can attain an ultimate spatial resolution comparable to that of STM topographic images in p-n junction regions, and can detect individual charged impurity atoms along the surface at a depth of few nanometers. Quantitative evaluation of charge distributions can be derived by comparing experimental data and simulations of the underlying charge concentration. The accuracy relies on the ability of the simulation to account for quantum phenomena, and further development of simulations based on the current-continuity model will be essential.
\n
The capability of the molecule-assisted probing method has been demonstrated with the use of C60 molecules. A spatial resolution of ~1 nm is determined by the size of the molecule. However, the C60 film on oxidized Si surfaces leaves ~20% uncovered areas. The coverage can be increased by the use of chemically modified C60 or other small molecules those formed a monomolecular-thick film on SiO2 surface. For high conductance of the tunnel gap, another transport mechanism, the single electron tunneling [66], becomes dominant and obscures the RET voltage measurements. Thus, optimization of the gap width is required.
\n
The presented methods can be used for measuring on rough surfaces, but careful data analysis should be performed to discard “artifacts.” In the gap modulation method, the tip vibration amplitude (dz) varies with tilt angle of the underlying surface, causing changes in the (dI/dZ) signal. In the dual-imaging method, large “sidewall” current such as shown in Figure 8 must be considered in data analysis. Also, atomically ordered surfaces can be obtained by cleavage, yet, to attain ultimate spatial resolution, STM measurements in well-controlled environment such as in an ultrahigh vacuum are necessary, where we can avoid undesirable effects caused by absorption of charged particles and molecules from air.
\n
To summarize, specific features of the presented 2D STM-based methods are (a) noncontact, stress-free measurements allowing analysis of delicate sample structures; (b) high spatial sensitivity to electrostatic field, which is substantial advancement in comparison with scanning Kelvin probe microscopy; (c) the ability to study nanoscale structures with a lateral size of 20 nm and below, which are inaccessible by other techniques.
\n
Further applications of the advanced STM methods will contribute to high-spatial resolution analysis of modern sub-100-nm electronic devices, functional nanowire devices, and novel devices incorporating two-dimensional materials such as graphene and topological superlattices. It will advance our understanding of charge carrier transport at nanoscale and encourage inventing novel energy-efficient devices.
\n
\n
\n
8. Appendix A
\n
The tunneling current is described as a periodic function as
The mean tunneling current is given in terms of the thermionic emission approximation including the vacuum tunneling term according to Reference [99] as
The area charge concentration at the Si surface (QSS) is obtained by solving the Poisson equation. An analytic solution for a 1D abrupt junction is given by [47]
Λ is the extrinsic Debye length, and volume densities of positive (p0) and negative (n) charge are in the Si bulk. The factor β = 1/kBT, and kB is the Boltzman constant, T is temperature.
\n
For 3D structures, a charge concentration at the semiconductor surface (QSS) is obtained by numerically solving the Poisson equation.
\n
\n
Acknowledgments
\n
The authors would like to thank colleagues of Nanoelectronics Research Institute (AIST, Japan) for valuable discussions and constructive comments motivating the research works.
\n
\n',keywords:"scanning tunneling microscopy, semiconductor devices, charge carrier distribution, resonant electron tunneling, silicon-on-insulator, photocarrier profiling, fullerene molecule",chapterPDFUrl:"https://cdn.intechopen.com/pdfs/50344.pdf",chapterXML:"https://mts.intechopen.com/source/xml/50344.xml",downloadPdfUrl:"/chapter/pdf-download/50344",previewPdfUrl:"/chapter/pdf-preview/50344",totalDownloads:2145,totalViews:364,totalCrossrefCites:1,totalDimensionsCites:1,totalAltmetricsMentions:0,impactScore:0,impactScorePercentile:11,impactScoreQuartile:1,hasAltmetrics:0,dateSubmitted:"November 6th 2015",dateReviewed:"February 17th 2016",datePrePublished:null,datePublished:"September 21st 2016",dateFinished:"April 15th 2016",readingETA:"0",abstract:"Significant attention has been addressed to high-spatial resolution analysis of modern sub-100-nm electronic devices to achieve new functions and energy-efficient operations. The chapter presents a review of ongoing research on charge carrier distribution analysis in nanoscale Si devices by using scanning tunneling microscopy (STM) employing advanced operation modes: a gap-modulation method, a molecule-assisted probing method, and a dual-imaging method. The described methods rely on detection and analysis of tunneling current, which is strongly localized within an atomic dimension. Representative examples of applications to nanoscale analysis of Si device cross-sections and nanowires are given. Advantages, difficulties, and limitations of the advanced STM methods are discussed in comparison with other techniques used in a field of device metrology.",reviewType:"peer-reviewed",bibtexUrl:"/chapter/bibtex/50344",risUrl:"/chapter/ris/50344",book:{id:"5201",slug:"microscopy-and-analysis"},signatures:"Leonid Bolotov and Toshihiko Kanayama",authors:[{id:"181405",title:"Dr.",name:"Leonid",middleName:null,surname:"Bolotov",fullName:"Leonid Bolotov",slug:"leonid-bolotov",email:"bolotov.leonid@aist.go.jp",position:"senior research scientist",profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:null},{id:"181408",title:"Prof.",name:"Toshihiko",middleName:null,surname:"Kanayama",fullName:"Toshihiko Kanayama",slug:"toshihiko-kanayama",email:"kanayama.t@aist.go.jp",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:null}],sections:[{id:"sec_1",title:"1. Introduction",level:"1"},{id:"sec_2",title:"2. Preparation of Si device cross-sections",level:"1"},{id:"sec_2_2",title:"2.1. Passivation by hydrogenation",level:"2"},{id:"sec_3_2",title:"2.2. Passivation by an ultrathin oxide",level:"2"},{id:"sec_4_2",title:"2.3. Formation of C60 monolayer films",level:"2"},{id:"sec_6",title:"3. Tunneling microscopy: basics",level:"1"},{id:"sec_7",title:"4. Advanced STM modes",level:"1"},{id:"sec_7_2",title:"4.1. Vacuum gap modulation method",level:"2"},{id:"sec_8_2",title:"4.2. Molecule-assisted probing method",level:"2"},{id:"sec_9_2",title:"4.3. A dual-imaging method",level:"2"},{id:"sec_11",title:"5. Application examples",level:"1"},{id:"sec_11_2",title:"5.1. Channel length in small MOSFET",level:"2"},{id:"sec_12_2",title:"5.2. Super-junction devices fabricated by the channeling ion implantation",level:"2"},{id:"sec_13_2",title:"5.3. Length-dependent resistivity of Si nanowires",level:"2"},{id:"sec_14_2",title:"5.4. Wavelength-dependent photocarrier distribution across strained Si stripes",level:"2"},{id:"sec_16",title:"6. Simulations of tunneling current spectra",level:"1"},{id:"sec_17",title:"7. Conclusion",level:"1"},{id:"sec_18",title:"8. Appendix A",level:"1"},{id:"sec_19",title:"Acknowledgments",level:"1"}],chapterReferences:[{id:"B1",body:'\nMüller E. W, Panitz J. A., and McLane S. B.: The atom probe field ion microscope. Review of Scientific Instruments. 1968; 39: 83–86. DOI:10.1063/1.1683116\n'},{id:"B2",body:'\nKelly T. F. and Miller M. K.: Atom probe tomography. Review of Scientific Instruments. 2007; 78: 031101. DOI:10.1063/1.2709758\n'},{id:"B3",body:'\nMiller M. K., Cerezo A., Hetherington M. G., and Smith G. D. W. Atom Probe Field Ion Microscopy. New York: Oxford University Press; 1996. 509 p. 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Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling. Japanese Journal of Applied Physics. 2014; 116: 023701. DOI:10.1063/1.4884876\n'},{id:"B95",body:'\nFukuda K., Nishizawa M., Tada T., Bolotov L., Suzuki K., Sato S., Arimoto H., and Kanayama T.: Simulation of light-illuminated STM measurements. In: Proceedings of the International Conference on Simulation of Semiconductor processes and Devices (SISPAD 2014); 9–11 September 2014; Yokohama, Japan; 2014. pp. 129–132\n'},{id:"B96",body:'\nSano N. Impurity-limited resistance and phase interference of localized impurities under quasi-one dimensional nano-structures. Journal of Applied Physics. 2015; 118: 244302. DOI:10.1063/1.4938392\n'},{id:"B97",body:'\nAdvanced Algorithm and Systems. [Internet]. 2016. Available from: https://www.aasri.jp/pub/spm/pdf/spm_concept_eng.pdf [Accessed 2016-02-10].\n'},{id:"B98",body:'\nFrauenheim T., Seifert G., Elsterner M., Hajnal Z., Jungnickel G., Porezag D., Suhai S., and Scholz R.: A self-consistent charge density-functional based tight-binding method for predictive materials simulations in physics, chemistry and biology. Physica Status Solidi (b). 2000; 217(1): 41–62. DOI:10.1002/(SICI)1521-3951(200001)217:1<41::AID-PSSB41>3.0.CO;2-V\n'},{id:"B99",body:'\nCard H. C. and Rhoderick E. H. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D. 1971; 4: 1589–1605. DOI:10.1088/0022-3727/4/10/319\n'}],footnotes:[],contributors:[{corresp:"yes",contributorFullName:"Leonid Bolotov",address:"bolotov.leonid@aist.go.jp",affiliation:'
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1. Introduction
Since 1962, there have been numerous reports on the metallurgical applications of lasers, including welding. The first laser welding operation was reported in 1963 for the butt welding of steel sheets using a pulsed ruby laser. In 1965, laser systems were developed to be used for welding electronic circuits, vacuum tubes interior, and other special applications that conventional technologies at the time could not provide. Due to the limited power source, until 1970, laser welding was limited to welding low-thickness materials at low speed. Later, high-power continuous laser sources were employed for welding procedures. In 1971, the presence of high-penetration welding or keyhole welding via laser beam welding (LBW) and electron beam welding (EBW) was reported. In other words, by this technique at high laser intensities (MW/cm3), it is possible to make keyholes in metals, which is not practical for pulsed laser welding because the formation of keyholes needs prolonged times to form and does not occur simply [1, 2]. Since 1972, the use of continuous CO2 lasers changed this direction and high-thickness stainless steel joints with full penetration were welded similar to those welded by the EBW process using the keyhole mode. These investigations were conducted in Japan, Germany, and the United Kingdom. Subsequent advances in CO2 laser welding were focused on further optimization of laser resources, laser beam quality, and understanding the interaction of joint design, welding speed, radiation concentration, and the plasma effects on weldability. Studies in this field have continued using sources with the power of up to 12-15 kW. Using the neodymium-doped yttrium aluminum garnet (Nd:YAG) sources can be more applicable than CO2 lasers due to their short wavelength and reduced radiance from the metallic materials (Figure 1). Currently, laser sources have many applications in the field of material processing. LBW as a new technology in recent years has found wide applications in various industries such as automotive, military, aerospace, shipbuilding, electronics, etc. Based on the assessments, it has been estimated that in the near future, the practice of diode lasers will have made great strides in LBW [3, 4].
Figure 1.
Schematic of the laser beam production.
The laser welding technique differs from conventional fusion welding methods in terms of equipment and operation. In laser welding, a thin and deep weld pool is achieved and the applied heat input to the joint is very low compared to conventional methods. This property allows the LBW to be used in certain applications where the welding depth requires a high width. The penetration depth and welding width can be adjusted by controlling the laser power, changing the focal position of the beam, welding speed, distribution mode of energy transfer (pulsed or continuous mode), and shielding gas parameters. This enables the LBW to join and fabricate critical components with minimum risk. Features such as low welding width, high penetration depth, excellent joint strength, and low workpiece distortion in addition to fulfilling the need for low-weight joints with high corrosion resistance, proper weld appearance, low electrode consumption, eradicating machining process, and ability to weld unreachable areas have made industries interested in this technique.
There are two main methods for laser welding. The first is to move the workpiece rapidly underneath the beam to obtain continuous welding. The second route, which is more common, is to weld by irradiating a series of beams. Since during LBW both the melting and solidification processes occur in a few microseconds, almost no reactions take place between the melt and the surrounding atmosphere; therefore, generally using shielding gas is not necessary.
The most optimum joint design for LBW is the butt joint, however, due to the thickness limit, T-joints or corner joints are also desirable.
Hybrid processes that use a combination of laser and gas metal arc welding (GMAW) are also developed to be used in a fixed position. In addition, the equipment used to prepare the joint design is no longer needed. The alloys of the filler metals are specifically designed to make the joint physically uniform. In addition, the hybrid processes can significantly increase the production speed. Moreover, they also affect the penetration depth and sealing of the joint. Recent exclusive advances in the fabrication of laser diodes have provided a new opportunity to solve persistent industrial problems. These processes must be modified to be assimilated with the desired purposes [3, 4].
2. Laser welding process
LBW is one of the innovative methods of fusion welding. By irradiating a high-energy laser beam to the intended gap, the heat required to melt the edges and fill them is provided and the joining process is achieved. It should be noted that the equipment and operation of the LBW are dissimilar to the conventional fusion welding methods. In LBW, a thin and deep joint is achieved, and the heat input applied to the workpieces is so much lower than the conventional welding methods. This property allows LBW to be widely used in certain applications in which a high ratio of penetration depth to joint width is required [5, 6, 7].
LBW is a balance between heating and cooling in a certain volume of one or two solids, leading to the melting and solidification of a material. LBW is characterized by the creation of a molten region by the absorption of intensified radiation, which allows the molten pool to expand into the solid interface region, resulting in a continuous joint between the components. Failed joints occur when the molten area is too large, too small, or the material is excessively evaporated. Weld quality is analyzed according to the evaporation of alloying elements and the thermal gradient of the phenomena leading to the crack formation [8, 9, 10, 11]. An imbalance in the volume and scale of the weld area leads to porosity. Achieving a balance between the heat input and output depends on the constant absorption of laser radiation and the uniform distribution of heat in the workpieces. The path of the laser beam to the weld pool is often disrupted by the accumulation of hot fumes at the beam focus point. In certain conditions, these hot fumes can turn into a plasma cloud that strongly affects the beam and absorbs and disperses it (Figure 2). The first stage in studying LBW is to determine the parameters affecting the heating/cooling balance, molten pool, welding area, reproducibility of the process, and the development of methods to control these parameters [5, 6, 7].
Figure 2.
The keyhole formation and laser welding using keyhole mode.
3. Advantages of laser beam welding
Proper joining rate, excellent welding quality, very high accuracy, high automation capability, and exceptional appearance of the welded joint are included as beneficial factors, leading to the application of LBW in various industries. Economically, the reduced production costs and low consumption of consumables have made this method one of the finest joining methods. To recognize why LBW is one of the best welding solutions, the top five advantages of this technique are listed below [5, 6, 7]:
3.1 Ability to join complex joints and high accuracy
LBW can weld complex joints successfully, especially it can join dissimilar materials or areas very difficult to reach using traditional welding techniques.
One of the main advantages of LBW is that it can offer a high level of accuracy and control, i.e. it can be used to join the smallest workpieces together without damaging them.
Strong potentials can be proposed for weight reduction and joint design opportunities. Typically edge welding is carried out by direct fusion of two base metals. Using this tactic, it is vital to maintain an almost zero gap between the workpieces to ensure suitable joining. Using the LBW, high fusion depth can be gained while reducing flange length by more than 50% of current standards. This can be obtained by employing hybrid features of integrated clamping, optical seam tracking, and beam oscillation capabilities (known as laser welding optic).
Like other welding processes, during LBW it is challenging to guarantee the accurate positioning of the energy at the joint. But a combination of process robustness, workpiece tolerances, and robot accuracy results in obtaining proper welds. Finding the joint by optical seam tracking and laser triangulation provides accurate positioning for the laser spot during the process. This seam tracking data is then sent back to the optic controller, translating the required data for repositioning of the head galvo motors to point the laser beam to the desired coordinates. The system is capable of providing several inclination angles to accommodate the adjustments of joint position for two and three-layer joints as flange heights variation relative to one another. By adding an integrated clamping unit to the head not only the workpiece can be fixed at the desired position, but also provides the tooling costs to clamp the seam can be reduced (Figure 3).
Figure 3.
Joining of edge seams by LBW: (a) flanged butt joint and (b) flare-V groove.
The clamping unit design allows the reaching into flanges openings or structures and rapid open/close clamping mechanism (200 ms), providing a good foundation for high-volume applications. The innovative technologies offer extra advantages to meet the welding requirements for base metals such as ultra-high-strength steels, aluminum, and boron. By utilizing oscillation motors along with those directly tied to beam location two-axis oscillation can be obtained at frequencies up to 1 kHz, which eliminates the oxide layers, extra time for the gas to exist the weld pool, or post-weld annealing of brittle microstructures. An instance of the cleaning of the welding area can be seen during the zero-gap welding of galvanized materials. To this end, a gap (−0.1 mm) is characteristically required to provide a place for evaporation of the zinc at temperatures higher than 0.5 Tm of the base material. If not correctly set up, the gas expulsion can be trapped within the solidifying melt and form porosity in the final weld. The oscillation feature grants a remelting phenomenon for the weld pool and allows the zinc to escape to the surface and leave the weld. For structural applications, it is frequently necessary to join dissimilar materials for example boron steels to electrolytically or hot-dipped galvanized steels. According to the beam location control feature using oscillation, a melt pool is formed, which floats on the workpiece. However, a distortion in the workpiece is not essentially attributed to the adaptive nature of the process.
3.2 Low heat input
LBW method uses a low heat input rate that minimizes the joint distortion. Hence, it is the preferred method for those who wish to make luxury products such as custom jewelry. Laser sources employ tremendously localized energy and allow non-contact use, which applies lower heat input on the workpieces. This method is ideal for non-contact applications, which protects other areas of the parent material from the adverse effects of heat.
The feature ‘line energy’ is commonly used as a denominator to compare welding processes carried out in 1F and 2F positions. Moreover, heat input determines the joint geometry, which can be controlled via the modification of the welding parameters. In other words, the heat input is directly correlated to the laser power (or arc power) and the welding speed. The heat input for the LBW process is calculated according to Eq. (1).
Qlaser=PL/vtE1
where Qlaser is the laser heat input (kJ/mm), PL is the output power of the laser source (kW), and vt (mm/s) is the travel speed. The heat input of the hybrid laser-arc welding (HLAW) considers the additional energy delivered by the arc and is determined by Eq. (2).
QT=Qarc+Qlaser=UI60vt+PL60/vQtE2
where Qlaser is the LBW heat input (kJ/mm), PL is the source output power (kW), vt (m/min) is the travel speed, QT is the HLAW heat input (kJ/mm), Qarc is the arc welding heat input (kJ/mm), U is the arc voltage (V), and I is the arc current (A).
3.3 Compatibility and replicability
LBW can provide continuous and repeatable component fabrication. This helps industries to reduce their manufacturing costs significantly. LBW is far more quickly and much more versatile than the conventional methods. Laser welding can also be used for cutting and drilling.
When a lap fillet is the functional joint, which should be processed, similar issues are apparent as well as the joint location and overlap. To resolve the issues optical seam tracking and beam oscillation are employed. However, gap bridging technology can also be used instead of clamping equipment. In most LBW applications, zero-gap is a similar challenge as well as the joint location and ideal fusion between sheets. In lap edge configurations gaps should be seen; hence, options are currently developed to produce sound joints in this configuration.
If a filler wire is required for modification of the chemical composition or other gap-related conditions, options are developed to use the tactile seam tracking system and utilize the filler metal to bridge the gaps (Figure 4). But, using remote laser welding, it is not practicable to insert the wire into the melting pool when optical seam tracking is employed for beam placement. Additionally, it is possible to weld the gap automatically without filler metal. Remote laser welding – adaptive (RLWA) is a unit, utilizing a real-time seam finding and tracking by internal controlling of the head, which is called gap bridging. The final result is the dynamic control of the laser spot position relative to the seam, not only irradiating a predetermined point in coordinates. When the beam is accurately placed into the seam, joining a lap point with high reliability is possible. This issue is attributed to gaps in the material, which typical laser processes struggle to accommodate. With gap bridging algorithms, which are predefined in the system controls, the LBW optic can identify gaps in the joint via the seam tracking package and adjust various conditions automatically to process the joint.
Figure 4.
Laser welding using brazing filler metal.
By modulation of laser power, y offset of the beam relative to the joint edge, spot size, and using beam oscillation in the x and y directions, the melt can bridge the joint. Gaps with 50% or less of the upper sheet thickness can easily be addressed with both aluminum and steel materials, while recent studies show capabilities beyond that in certain situations (Figure 5).
Figure 5.
Different LBW gaps and RLAW equipment.
3.4 High-strength joints
Since the heat input rate is significantly lower than the conventional methods, the heat affected zone (HAZ) of laser-welded joints is very small that allowing manufacturers to perform high-strength welds.
The laser beam machining (LBM) parameters such as laser intensity, beam distribution, scanning speed, spot size, and relative motion between the laser beam and workpiece can be adjusted according to different base materials. Currently, lasers are substituting conventional machining equipment because of their superior advantages. Major advances have been made in this area to shorten the pulse time for various machining processes. Prolonged pulse durations increase the HAZ and induce high thermal stresses, which result in the formation of cracks, voids, and surface debris. Short pulse times decline the thermal conduction, provide accurate machining operation, and proper surface finish. Figure 6 reveals the difference between the properties of long and short pulse times [6].
Figure 6.
Difference between the properties of (a) long-pulsed and (b) short-pulsed durations.
3.5 Appearance, precision, and cleanliness
Since there is no need for filler metals in LBW, it provides an excellent welding quality and clean processing, so that it gains attention especially in the medical engineering industry where the quality of medical devices and components is very important.
The feature of weld optics focuses the beam down to a spot size range of 200-300 μm. On the contrary, larger spot sizes are rarely used, when low-shift welding is desired. However, large weld spots are not beneficial since they require higher overall energy and a larger heat input rate. The weld heads function with a collinear charge-coupled device (CCD) camera. Different focal planes of the beam are corrected in the visible and infrared spectra. During this modification process, a sharp CCD image indicates the proper adjustment of the weld head to its correct focal position. Moreover, a projected crosshair is centered to the position of the weld spot to be perfectly superimposed with the beam (Figure 5). Thus, machine vision algorithms are employed for automated precise adjustment of the welding optics to desired coordinates so that the beam is exactly irradiated to the gap between the workpieces to be joined.
To keep the power density constant, LBW should be always carried out using the waist of the beam with an accuracy of 10 μm. If the irradiated beam is not focused, the power density rapidly increases and causes an uneven weld pool. Since the strength of the contact between the joining surfaces is one of the key parameters of low-shift welding, the welding design should be consistent with this parameter. To adjust cylindrical parts to the most parallel state, a dome-shaped air bearing is used. A preset force moves the parts in contact with each other, which are self-adjusted as floating on an air bearing. When the surfaces are positioned parallel to each other, the angular position is fixed to activate the alignment. Predetermined offsets can compensate for the predicted weld shift in a planar setup. By optimizing the tolerance of the parts, the accuracy of the offset can be improved.
If a welded component shifts during the nano-welding process, additional employment of the weld energy in an opposite direction bends the workpiece back into the desired location. During this process, the effect of the unavoidable shrinkage is exploited. Careful experimenting should be carried out to determine the proper power and time of the corrective pulse. This procedure is known as laser-induced micro-adjustment (LIMA). Forming nanostructured weld joints requires a weld design, which is optimized for LBW. The LBW system has to consider the specific aspect ratio of the workpiece. To obtain an optimal result, it is suggested that the nanostructure designer and the manufacturer of the welding system work together from the beginning.
4. Laser welding limitations
Although LBW can be an amazing technology, it also has minor limitations. One of the most common disadvantages of LBW is the high cost of the process. LBW machines are very expensive and complicated so they are not accessible to many manufacturers. The other disadvantage is that it requires a highly-skilled workforce. Otherwise, LBW is almost perfect [5, 6, 7].
5. Laser sources and stimulated emission
Laser is a monochromatic light source (sometimes visible) and coherent with very high orientation and brightness. A comparison of the conventional light source and laser light source is given in Figure 7 [6, 7].
Figure 7.
The comparison between a plain light source and a laser source.
The energy levels used in the laser radiation process are generally of two categories of atomic and molecular energy levels. Under normal conditions, atoms are generally in the ground state until they are excited by an external stimulus (pumping system). Then they return to the ground state in a very short time (nano/microseconds) by emitting a photon having an energy equal to the difference between the two levels. This return is possible in two ways [6, 7, 12], spontaneous emission and stimulated emission. Stimulated emission is considered in laser. When an atom is in the excited state, if a photon with an energy equal to its excitation energy passes by that atom, the photon induces it to be sunk. The photon is a laser photon if it is produced under the influence of another photon. Otherwise, it is the spontaneous emission [6, 7, 12].
6. Optical resonator
Each laser optical resonator consists of two mirrors and a pumping chamber, containing the active laser medium. Generally, one of the mirrors is a full reflector (input coupler), while the other is a partial reflector (output coupler). Photons, which are moving in the direction of the resonator axis are resonated to form the laser beam. Photons in other directions are destructed by adsorption on the walls of the active medium (Figure 8) [3, 4, 5, 6, 7].
Figure 8.
The function of the optical resonator during laser beam production.
7. Laser welding procedure
The principles of the LBW process are not complicated. The procedure schematic is presented in Figure 9. (1) A pump, which is the energy source provides the energy required for the process. The pump stimulates the laser to such an extent that the electrons held by the atoms are moved to higher energy levels. (2) Electrons reduce their energy levels dramatically, releasing photons. The spontaneous emission of photons is what leads to the production of the laser beam. (3) Spontaneously emitted photons collide with the ones having higher energy levels. The collision reduces the energy levels of the electrons, leading to the emission of another group of photons. Both groups are now having the same wavelength and moving at the same speed. (4) Photons are emitted in all directions. However, they are all limited to travel in the same medium and hit the resonator before reflecting from the medium. The intensifying mirror then determines the level and direction of emission. To perform any type of amplification, the fraction of atoms must be higher than that of low-energy photons. (5) The laser beam is targeted and focused on the workpieces to be welded. Highly-focused light energy is converted to heat energy at the workpiece surface. (6) During a process known as surface conductivity, the generated heat melts the material surface. The generated heat is controlled to be below the boiling point of the parent material. This technique is an ideal solution when welding materials that have high thermal conductivity. Apart from welding, other procedures such as drilling, cutting, and stripping can be carried out using laser beam energy [3, 13, 14, 15, 16].
Figure 9.
The key components of laser welding procedure.
By combining the LBW and GMAW techniques, the laser-GMAW hybrid welding is developed. This combination is an attractive tool with a great potential for welding lightweight structures, especially aluminum alloys. This hybrid welding technique is generally acknowledged for its efficiency, robustness, and flexibility. By combining a deep-penetrating laser beam with high filler feeding of GMAW the primary applications of LBW and GMAW can be improved significantly. The main benefits of this technique are high gap-bridging ability, deep and stable weld penetration, facile addition of the filler metal, and low distortion. This hybrid method allows much wider groove tolerance in comparison with LBW of specific alloys such as aluminum alloys. Furthermore, the distortion reduction decreases the required post-welding treatments and facilitates the assembling process because the hybrid-welded components are more dimensionally precise. Moreover, if very accurate metallurgical factors are needed, the hybrid process can be easily balanced with the filler metal, which declines the susceptibility to hot cracking, especially for specific aluminum alloys. This combined process can also enhance the weld bead shape appearance and quality (e.g. by elimination of undercut), reducing the porosity and increasing the welding speed.
Since hybrid laser arc welding (HLAW) apparatuses are influenced by each of the two processes, the weld geometry of HLAW is controlled by the heat input of each process as presented in Figure 10. For instance, by increasing the power of GMAW, the width to depth ratio of the weld is increased. Nevertheless, due to the contribution of both techniques, the HLAW-welded joints are usually similar to LBW at the bottom and similar to GMAW on the top of the joints.
Figure 10.
Hybrid laser GMAW welding process.
In addition, due to the involvement of a high-density laser beam, keyhole formation is a characteristic of the HLAW process in most cases. On the other side, a conduction-like process without the formation of the keyhole is obtained if the beam is not focused or its power is insufficient. A previous study regarding the aluminum LBW showed that initially, the Nd:YAG laser beam absorption by the base metal surface could be as low as 10%. But, when the base metal was molten, the beam absorption greatly increased up to almost 100%, especially when the keyhole was formed. Interestingly, it has been reported that the arc stability of GMAW is increased when it is coupled with a laser beam. This enhancement is achieved when the arc is close enough to the beam and they share the same melting pool. For example, since the aluminum melt has a lower electrical resistance than that of the solid-state or oxide layer, the arc favors the path with the lower resistance. Besides, the interaction between the keyhole and arc plasmas increases the arc stability. The energy from the formed keyhole creates a metal plasma, ionizing the shielding gas of the GMAW process that facilitates the strike and stabilizes the arc. Furthermore, the HLAW arc has a finer geometry, a higher electrical conductivity, and a higher current density (up to 500% of the GMAW arc). On the other side, since in HLAW, the metal plasma is originated from both the base metal and the filler metal, more metal vapor is produced than that of the LBW. Consequently, the keyhole formation is much easier and process failure is prevented. The penetration of this technique is higher than the LBW due to the higher plasma pressure. Since the molten pool is larger during this process, the weld pool is in the liquid state for a longer time compared to the LBW. This is beneficial in the case of welding aluminum alloys due to the high hydrogen solubility in the molten aluminum. Hence, a larger melting pool gives more time to hydrogen bubbles to escape from the weld, resulting in the formation of fewer gas pores.
Because of the interaction between the two processes, the advantages are more than the drawbacks. For welding aluminum alloys, these advantages depend on the welding parameters, the alloy composition, and the joint type. A majority of the authors stated that the welding speed is increased by using the hybrid technique. Moreover, it improves the penetration of the weld seam, which is 10-20% and 20-50% higher than the LBW and GMAW, respectively. Additionally, many studies have expressed that the stability during aluminum welding is higher in comparison with LBW or GMAW processes. Additionally, the applied heat input is lower due to the elevated speed and high energy density of HLAW. By lowering the heat input the distortion of the welded components is directly decreased. Since the GMAW process generates a large welding seam, gap bridging is improved during HLAW compared to the LBW. It has been reported that the HLAW can increase the gap bridging from 1.05 to 1.19 mm compared to the GMAW, while the maximum gap tolerance of the autogenous LBW is around 0.3 mm. Another benefit of this process is its higher wire feed alignment compared to the LBW. Since in the HLAW process the feeding wire does not have to intersect with the laser beam and the weld pool, the addition of filler metal is more facile than that of the cold wire fed LBW. The reduction in the component distortion, high gap bridging, filler application, and wire misalignment tolerance are the main important aspects of automated HLAW that increase the robustness of this process for industrial applications compared to the primary original processes of LBW and GMAW.
8. Types of laser welding based on laser sources
Several types of lasers can be utilized for LBW. These include fiber lasers, Nd:YAG pulsed lasers, and Nd:YAG continuous-wave lasers. However, one should know that the type of employed laser source for LBW depends on the application [3, 6, 7, 13, 17].
Fiber lasers can be used for a wide range of applications, from joining very small components used by medical engineering and electronics industries to welding thick components in the automotive and aerospace industries. Fiber lasers are versatile and inexpensive, which are suitable for achieving high-quality spot welds [3, 6, 7, 13, 17].
Laser sources are generally classified based on the state of matter of their active medium and their temporal modes. Hence, according to physics, lasers are categorized into solid-state, semiconductor, gas, and liquid dye lasers [4]. According to the temporal modes, they are classified into two modes of continuous-wave (CW) and pulsed mode. In the CW mode, the beam is continuously irradiated without interruption, whereas in the pulsed mode the beam is irradiated periodically. Table 1 displays the laser types and their wavelengths.
Solid-sate lasers
Gas lasers
Semiconductor lasers
Liquid dye lasers
Ruby
ArF
AlGaInP
Stilbene
Alexandrite
KrF
AlGaAs
Coumarin 102
Ti-sapphire
XeCl
InGaAs
Rhodamine 6G
Nd-YLF
XeF
InGaAsP
Nd:YAG
Argon
Nd:glass
Krypton
Er-YAG
HeCd
Copper vapor
Gold vapor
HeNe
CO2
Table 1.
Solid-sate, semiconductor, gas, and liquid dye lasers.
These medium-power lasers use continuous-wave mode during the welding process. Therefore, the average power of the source must be higher than a certain limit. Continuous-wave lasers are ideal for high-speed and deep penetration welding. They produce joints with a very low heat input rate. Hence, they create a smaller HAZ [3, 6, 7, 13, 17]. Nd:YAG pulsed lasers generate discrete pulses of controllable energy that can be used for ideal welds. Although the average power of these lasers is often low, they employ high-power peaks for welding. They can be properly utilized for joining large spot welds as well as deep spot and seam welds.
The laser active medium is doped by a few numbers of impurity ions in solid-state layers. Among the solid-state lasers, Nd:YAG lasers are mostly employed for LBM applications. The solid-state sources (e.g. Nd:YAG, ruby, and Nd-glass lasers are vastly utilized for the machining of metals. However, Nd:YAG lasers can also be used for ceramic materials. Gas lasers are categorized into three types according to their composition (i.e. neutral atom, ion, and molecule). In general, gas lasers can be used in either CW or pulsed modes. They are also used with the transverse flow, axial flow, and folded axial flow for construction applications. Among them, CO2 lasers are most commonly employed for machining ceramics, plastics, nonmetals, and even organic materials.
Although semiconductor lasers are made of solid materials, their functioning principles are different from solid-state sources. The function is based on the radiative recombination of charge carriers. These sources can produce wide beam divergence angles (around 40°).
In comparison with other lasers, liquid-state sources are easier to fabricate. Their main advantages are the simple cooling procedure and replacement of the laser cavities. Unique properties of liquid organic molecules allow the liquid dye lasers to be adjusted over a wide range of wavelengths (200-1000 nm).
9. Types of laser welding based on welding method
LBW is divided into three types of welding, conduction mode, conduction/penetration mode, and penetration or keyhole mode (Figure 11) [5].
Figure 11.
Different modes of laser welding.
9.1 Conduction welding
During the conduction mode of LBW, heat is transferred to the metal through thermal conductivity. In this mode, low energy is transferred per unit area (∼0.5 MW/cm2), which is often used for shallow joints to create a wide and shallow weld (Figure 8). Due to the low penetration depth in this mode, the gas absorption in the weld pool is low. It is also completely soundless. Typically, this mode can be utilized for applications, which require a high-quality weld e.g. battery sealing applications. The conduction mode is carried out in four steps [3, 5, 6, 7, 13, 17], (I) heating of the workpiece surface by the laser radiation, (II) formation of the molten pool, (III) no melt evaporation during the process, and (IV) determination of weld pool shape by the thermal conductivity (Figure 12).
Figure 12.
The effect of thermal conductivity on the weld pool shape (a) heating, (b) surface melting, (c) surface vaporization, (d) plasma formation, and (e) ablation.
9.2 Conduction/penetration welding
This mode occurs at medium energy density per unit area (∼1 MW/cm2) and leads to greater penetration than the conduction state (Figure 11) [3, 5, 6, 7, 13, 17]. In this case, the keyhole exists with shallow penetration that provides a characteristic aspect ratio (depth/width) of ∼1. This mode is carried out almost exclusively via pulsed Nd:YAG laser for various spot and seam welding applications.
9.3 Keyhole welding
By increasing the peak power density (>1.5 MW/cm2) the welding mode is shifted to the keyhole, i.e. deep narrow welds with an aspect ratio higher than 1.5. The laser beam heats up and melts the material quickly upon irradiation. If the intensity is high enough, a key-shaped cavity filled with the base metal vapor is formed, reflecting the generated heat into the material bulk that is sealed by the molten material behind the laser beam (Figure 13). In this case, welding is often performed by high-energy laser sources to join thick workpieces or fill cavities. This mode is called keyhole welding and it is accompanied by a muffled sound [3, 5, 6, 7, 13, 17]. Keyhole formation improves the laser heat absorption via two major mechanisms; first, through Fresnel absorption mechanism, absorbing the beam by successive reflections of the beam on the keyhole walls (Figure 13), and second, through the absorption of the laser energy into a vapor-filled cavity caused by a phenomenon called inverse Bremsstrahlung process [5, 17].
Figure 13.
Absorption of the laser beam due to successive radiations from the wall of the keyhole.
In the keyhole mode, the weld can be accomplished at either very high travel speeds (up to 20″/s with short depth welds, or very deep welds (i.e. up to 0.5″). The high-power density of the laser beam forms a thread of vaporized material, called a keyhole, extending into the bulk and providing a channel for the beam to be efficiently delivered into the joint. This direct energy delivery into the workpiece maximizes the weld depth and minimizes the heat input to the base metal, minimizing the HAZ and workpiece distortion. This mode is used for the production of many automotive and train components such as torque converters and gearboxes, which require up to 0.25″ penetration. The keyhole is surrounded by the melt, which tries to close it. Under steady-state conditions (optimized welding), the vapor pressure confined within the keyhole prevents the melt from collapsing in on itself permanently, which would interrupt the welding. But even during an optimized weld localized collapses of the keyhole may take place.
The main difference between these modes of LBW is that in the first mode the surface of the weld pool is not broken, but in the case of penetration welding, the surface of the weld is opened so that the laser beam penetrates the molten pool. Conduction welding is not prone to gas absorption during the process, which is due to the lack of penetration of the laser beam into the material bulk. In penetration welding, discontinuous closure of the keyhole increases the susceptibility to porosity formation in the weld pool (Figure 14) [3, 5, 6, 7, 13, 17].
Figure 14.
The schematic of different modes of laser welding (a) conduction mode, (b) transition keyhole mode, and (c) keyhole/penetration mode.
Since LBW is a high energy density method, it does not require thermal conduction to achieve a deep penetration, which is in contrast to the conventional methods of arc welding and gas welding that obtain penetration via increasing the heat input. In conduction LBW, the weld width is often greater than the depth and the heat input is greater than the amount required for penetration. Moreover, in penetration or keyhole welding, the laser heat is transferred from the surface into the joint and creates a deep and thin weld pool (Figure 14) [4, 18].
10. Variables affecting laser welding
Achieving optimal conditions is a necessary and sufficient condition to achieve an ideal weld with a suitable appearance. Therefore, it is necessary to study the variables and parameters affecting LBW [3, 4, 5, 6, 7, 13, 17, 19, 20, 21].
10.1 Parameters
10.1.1 Parameters related to the laser source
The type of laser source that determines the laser wavelength (CO2, Nd:YAG, etc).
Continuous (CW) or pulsed laser
Medium laser power
The energy of each laser pulse
Pulse time width
Pulse frequency
Laser beam quality
Optical specifications of the laser beam focusing system in the focus
10.1.2 Parameters related to the operation of the system and the welding process
The parent material and its chemical composition
The distance from the center of the beam to the surface of the workpiece
Welding speed
Conditions for starting and finishing welding
Gas shielding type
Gas discharge
Nozzle geometry
The geometry of the joint of the two sheets includes the distance between the two edges and the matching of the two edges
Plasma plume or bubble formation when laser radiation on the metal surface
10.2 Effect of laser source type
The function basis of a laser source is depended on the state of matter of the source active medium (gas or solid-state). The most well-known gas lasers are CO2 lasers, employing a combination of helium, nitrogen, and carbon dioxide gases with a ratio of 1:1:18. The sources operate based on the molecular energy levels of the gas. Hence, they are considered molecular lasers. The most important factor in optimizing the performance of a CO2 laser is efficient cooling of the gas and prevention of decomposition and failure of the gas molecules. The new generation industrial CO2 lasers are fabricated with low-power ranges (10-20 watts) to high-power ranges (about 6000 watts), using radio frequency (RF) waves as the pumping source called RF-excited lasers. The advantage of these lasers over other gas lasers is the possibility of operating in high-frequency pulse mode and the extended life span of the sealed-off tubes. Another type of gas laser is the gas dynamic laser. Since the function of these lasers is based on the sudden decrease of the gas pressure, the gas type of the source is very determinative during the pressure reduction and the sudden cooling mechanism of the active medium. This type of source is widely used for military purposes.
Nd:YAG lasers are the most widely used solid-state sources, having higher optical and physical properties, and greater efficiency compared to gas lasers. In Nd:YAG lasers, the active medium is a Y3Al5O12 crystal, where some of the Y3+ ions have been replaced by Nd3+ ions, resulting in the formation of Nd:YAG crystal and providing a promising active medium with several high-intensity wavelengths in the infrared region. Another solid-state source is used in diode lasers (semiconductor lasers), resulting in the fabrication of sources with ultrahigh efficiency and great tunability. However, the main limitation of these lasers is their high divergence.
Nd:YAG laser welding can be used more than CO2 due to its shorter wavelength (1.06 mm) which allows displacement using optical fibers and also reduces the reflection of metal surfaces [3, 4, 5, 6, 7, 13, 17, 19, 20].
10.3 Pulse shape
In most cases, LBW uses a square pulse shape (Figure 15). But two other types of pulse shapes are also used in special welds. The first type (Spike pulse) is used for light-reflecting materials such as copper and aluminum (Figure 15). The second type (Annealing pulse) is used to minimize the radiant heat cycle during welding for crack-sensitive materials (Figure 15) [3, 4, 5, 6, 7, 13, 17, 19, 20].
Figure 15.
Different pulse modes.
It should be noted that the capability of pulse shaping in some lasers such as Nd:YAG sources can facilitate operations such as drilling and cutting. So that a chain of very short pulses with a higher peak power than the main pulse is descended immediately after the main pulse to form a quick coupling by the laser beam or numerous pre-pulses with a lower peak power before the main pulse (a pre-pulse should have lower power than the main pulse) are descended on thin foils to prevent the welding area from being punctured.
10.4 Peak power
The peak power of a laser source is the maximum power that the source can provide in either continuous welding (CW) or pulsed welding modes. It is measured in watts (W) or kilowatts (kW).
One of the important parameters of pulsed laser welding is pulse peak power. In fact, with this peak power, penetration welding can be created with a low-power laser. The peak power of a square pulse (Pp, (J/ms)) is equal to the pulse energy (J) divided by the pulse time or width (Pulse duration (ms)) (Eq. (3)) [3, 4, 5, 6, 7, 13, 17, 19, 20].
Pp=Pulse energyPulse durationE3
Obviously, by significantly reducing the pulse time in a low-power laser, a high pulse peak power can be achieved to create penetration welding.
An optimum peak power creates the deepest penetration in the given energy without the expulsion of materials. Welded joints, which are made with high peak power and short pulse widths are narrow and deep and require a high heat cycle.
10.5 Time width or pulse width
Pulse width is the duration of each laser pulse (ms). During the pulse on time, the workpiece senses the pulse power, and in the distance between the two laser pulses (pulse off), the parent material is cooling. The pulse width controls the heat input to the workpiece, the welding width, and the heat cycle. Increasing the pulse width expands the welding and HAZ dimensions due to the increased heat transfer time (Figure 16) [3, 4, 5, 6, 7, 13, 17, 19, 20].
Figure 16.
Schematic of the pulse width and power peak effects on the weld shape.
In other words, the pulse width is a fine-tuning parameter, which is used to adjust the penetration and width of the weld and, if necessary, to stabilize the weld. By increasing the pulse width and prolonging the thermal transfer time, the weld dimensions (penetration, width, and HAZ). To increase the weld width, reduce the thermal cycle, and minimize depth variation, the pulse width must be increased.
It should be mentioned that the optimization of maximum power (peak power) and pulse width during LBW highly affect the joint quality. So that a very high maximum power causes spraying and improper joining. On the other hand, very small pulse width can cause spraying or lack of penetration.
10.6 Pulse energy
From the point of view of the irradiated material, each laser pulse acts as a package of energy called pulse energy (pulse energy, (E, J)) and its relationship with the power peak (Pp, (J/ms), and pulse width (T, (ms)) (pulse width or pulse duration) (Eq. (4)) is in Figure 17 [3, 4, 5, 6, 7, 13, 17, 19, 20].
Figure 17.
Visual relationship between the frequency, pulse width, and energy level.
E=Pp×TE4
10.7 Frequency
Frequency (f) indicates the number of pulses of the flash lamp and therefore the number of laser pulses per second (Eq. (5)). Frequency is expressed in Hertz (Hz) or pulse per second (PPS) as given in Eq. (1). On the other hand, the frequency inverse (1/f) is equal to the interval between two consecutive pulses. By knowing the amplitude of the laser pulse (T), we can estimate the time between two pulses, i.e. the laser extinction time. It also controls the heat input to the workpiece and the heat cycle [3, 4, 5, 6, 7, 13, 17, 19, 20].
f=1Pulse periodE5
10.8 Average power
The importance of this parameter is for welds using more than one pulse. In fact, the average power (Pave) of a laser source is obtained by multiplying the energy of each pulse by its frequency (Eq. (6)) [3, 4, 5, 6, 7, 13, 17, 19, 20].
Pave=E×FE6
Medium power is applied when more than one pulse is required for welding. As the average power increases, the heat input rate increases; hence, with increasing the heat input, the penetration depth and weld width increase. In general, at constant power, the smaller the beam diameter, the more concentrated the heat and the smaller the weld pool. The diameter of a laser beam output can be increased by increasing the power. For instance, lasers with 1, 5, 10, and 25 kW powers have diameters of 10, 25, 40, and 70 mm, respectively. The average power density of these diameters is between 6 and 13 W/cm2.
10.9 Power intensity or density
The density or power intensity (I) at any given moment is equal to the amount of direct power equal to the cross-sectional area of the beam (D) at the parent material surface (Eq. (7)). The diameter of the laser spot in the focus depends on the type of laser and its beam quality and the beam focusing system. Power density is a function of the beam focusing tool and the maximum laser output power [3, 4, 5, 6, 7, 13, 17, 19, 20].
I=PowerπD24E7
In short, the amount of beam intensity determines the state of the welding process and the formation or non-formation of the keyhole. On the power peak, the penetration rate of the weld, the pulse width usually controls the heat input to the workpiece, and the power density controls the penetration rate of the weld.
10.10 Optical specifications of the laser beam focusing system in the center
The choice of laser beam focusing system depends on the type of process, the type of laser, and the workpiece material. In fact, the cross-sectional area of the laser beam at the focus, which is one of the two main factors in determining the laser intensity at the focus, depends on the choice of the focal length of the laser beam focusing system. The relationship between the laser spot diameter at focus (DF) and the focal depth or Rayleigh length (RL) with the focal length of the beam focusing system is given in Eqs. (8) and (9).
DF=M24πλfDLE8
RL=DFfDLE9
where f is the focal length of the beam focusing system, λ is the laser wavelength and M2 is the quality factor of the laser beam. Rayleigh length is the distance at which the laser intensity reaches 70.7% of the maximum intensity at the focus and is considered as the focal depth or effective focal length. The larger the focal length of the focus system, the smaller the diameter of the laser spot in the focus (Figure 18) [3, 4, 6].
Figure 18.
Schematic of the laser beam focusing system.
The intensity distribution due to the optical nature of lasers depends on the properties of the resonator, active medium, and pumping system. Although the intensity distribution at the cross-section of the beam is not uniform, it can be predicted according to the properties of the resonator, active medium, and pumping system and is considered as an intrinsic feature of each source. The best mode for intensity distribution is Hermite-Gaussian mode or TEM00, having the highest intensity in the center of the beam with an M2 factor of 1. High-power industrial lasers usually have a combination of TEM00 mode and higher modes in the beam. Therefore, the higher the share of higher modes, the larger the M2 factor, the greater the divergence, and the lower the optical quality of the laser beam. To reduce the divergence and correct the beam of lasers with low optical beam quality, such as solid-state Nd:YAG sources, a special optical tool called a beam expander is used.
11. Joint and adaptation design (fit-up)
LBW is in most cases without metal fillers. Therefore, to have an ideal laser weld, the edges must fit perfectly at the joint. If the distance between the weld surfaces is too great, there will not be enough melt to fill the gap and an undercut will be created on the weld surface. To create the desired weld, the gap distance must be very small. Normally it should not be more than 10% of the material thickness [3, 4, 6].
12. Seam welding
Sequential irradiation of laser pulses on the workpiece, while the workpiece is moving at a slight velocity perpendicular to the axis of the radiation, creates a continuous chain of welding cones. Sometimes their overlapping extends to the lower sections and the depth of the workpiece (Figure 19). The percentage of overlap is a function of the speed, frequency, and diameter of the laser spot. This parameter is used to determine the most suitable laser conditions for work and to determine the total time of the welding cycle [3, 4, 6].
Figure 19.
Schematic of linear welding with a pulsed laser.
If a balance is struck between the parameters of pulse penetration, welding speed, and pulse frequency, seam welding has reached the desired state. Usually, at first, the laser parameters such as pulse width and power are selected and the welding speed is determined by considering the spot diameter and the overlap required (Figure 20). The overlap factor (Qf) is given in Eq. (10) [3, 4, 6].
Figure 20.
The effect of overlap on penetration depth in seam laser welding.
QF=1−V/f/S+VT×100E10
where V (mm/s) is the travel speed of the workpiece (Travel speed) below the welding head, f is the working frequency of the laser (Hz), φ is the beam spot size (mm) and T is the pulse width of the laser (ms)) [3, 4, 6].
The best conditions are obtained when complete and defectless welding is created with the least energy and number of pulses and with a reasonable speed [3, 4, 6].
13. Applications of laser welding
The application of laser beam welding (LBW) in the industry is increasingly expanding, from microelectronics to shipbuilding can use this welding process. This user potential can be attributed to the following factors [3, 4, 5, 6, 7, 13, 17, 19, 20, 21]:
Limited heat input
Small accepted heat area
Slight unevenness
High welding speed
Potential of dissimilar joining
Some of these features make LBW the preferred option for some industries that have previously used the resistance welding process. The LBW process can also be combined with an electric arc welding process with a wire used in neutral shielding gas or the MIG welding process. These process combinations are designed to be placed on the surface to be welded. In addition, the special equipment used significantly reduces the tools needed to prepare the desired edge for welding. The existing filler wires with the appropriate chemical composition have provided the necessary conditions for the uniformity of the mechanical properties of the welding area. In addition, the combined processes can significantly increase the speed of work, are also effective in deep penetration and the overall sealing. Recent advances in laser diodes have provided a new opportunity to solve industry problems.
Powerful CO2 lasers (2-10 kW) are currently used in automobile structure welding, heat exchangers, etc. For years, ruby lasers less than 500 W have been used to weld small workpieces such as small, delicate parts of medical instruments, electronic packs, and even razors. High-power ruby lasers use optical fibers to transfer the beam. This was done simply by robots and made possible a wide range of 3D applications such as cutting and laser welding automobile structures.
The laser beam is focused on a small point and creates at that point, it causes the metal to melt and even evaporate. To focus the power of powerful CO2 lasers, water-cooled mirrors are used instead of lenses.
Fiber laser welding stands out as a robust technique when the joining of dissimilar materials is considered using the LBW in medical devices, electronics, automotive, and aerospace applications. It can simultaneously reduce manufacturing costs and offer design flexibility.
Theoretically, any material that can be joined by conventional methods, can be also welded by LBW. However, when welding dissimilar materials due to their different physical and chemical properties (e.g. melting point, boiling point, density, thermal conductivity, and coefficient of thermal expansion) various difficulties can occur, which makes the joint unacceptable. Moreover, good solid solubility is vital for the production of sound welds of dissimilar metals. This is only achieved when the materials have compatible melting points. If the vaporization temperature of a material is close to the melting point of the other one, the weldability is low, which results in low-quality joint and/or formation of brittle intermetallic phases.
Formerly, most dissimilar welds were performed by flashlamp pulsed Nd:YAG lasers. Lamp-pumped sources can produce multi-millisecond pulses, which have peak powers much higher than the average source power (with a low duty cycle). High peak power of the lamp-pumped Nd:YAG sources along with the pulse shaping capabilities results in an ideal option for welding dissimilar materials. Penetration depth is too deep during this technique, which may lead to defective joints. However, insufficient weld depths can be prevented by adjusting the initial and final powers based on the base metals and the joint geometry.
Researchers have developed various pulse shapes to improve weld quality and decrease cracks and porosity. These attempts have provided valuable solutions to join dissimilar materials in the absence of welding defects.
LBW is a versatile method that can be used for various types of metals (Table 2). Some of the metals commonly used in LBW are:
Further advances have been made in this technology to expand its scope. It can now be used for many other types of metals and even dissimilar materials.
14. Conclusions
This chapter is focused on the fundamentals, parameters, and applications of laser beam welding. Currently, laser sources have many applications in the field of material processing. Laser beam welding as a new technology in recent years has found wide applications in various industries such as automotive, military, aerospace, shipbuilding, electronics, etc. An energy source provides the energy required for laser production. This source stimulates the electrons held by the atoms to move to higher energy levels. Electrons reduce their energy levels dramatically, releasing photons. The spontaneous emission of photons is what leads to the production of the laser beam. In LBW, a thin and deep joint is achieved, and the heat input applied to the workpieces is so much lower than the conventional welding methods. This property allows LBW to be widely used in certain applications in which a high ratio of penetration depth to joint width is required. LBW has a great power density (in the range of megawatts per cubic centimeter), which offers a very small HAZ due to its high heating/cooling rate. The weld pool size may vary between 0.2 and 13 mm. though only smaller sizes are used for welding. Different sources include fiber lasers, Nd:YAG pulsed lasers, and Nd:YAG continuous-wave lasers are used for LBW based on the application. LBW employs three types of modes including conduction mode, conduction/penetration mode, and penetration or keyhole mode to join the materials. The main difference between these modes is in the type of heating mode, weld pool filling, depth of penetration, and shape of the weld pool. Different parameters affect the LBW process such as the chemical composition of the parent material, welding gap, welding speed, gas shielding type, beam shape (geometry), joint type, etc. Many equations are suggested to determine the LBW parameters, pulse energy, frequency, power and power density, and beam focusing adjustments, which are described in detail in the chapter.
Conflict of interest
The authors declare no conflict of interest.
\n',keywords:"laser welding, CO2 laser welding, laser micro-welding, solid-state laser welding",chapterPDFUrl:"https://cdn.intechopen.com/pdfs/80478.pdf",chapterXML:"https://mts.intechopen.com/source/xml/80478.xml",downloadPdfUrl:"/chapter/pdf-download/80478",previewPdfUrl:"/chapter/pdf-preview/80478",totalDownloads:73,totalViews:0,totalCrossrefCites:0,dateSubmitted:"December 4th 2021",dateReviewed:"January 3rd 2022",datePrePublished:"February 16th 2022",datePublished:null,dateFinished:"February 15th 2022",readingETA:"0",abstract:"Among novel techniques, laser welding is considered an adaptable and rapidly evolving method, finding innumerable applications in engineering industries. It is capable of welding narrow and impassable joints precisely, which can be operated under computer control. This chapter of the welding Handbook reviews the most recent developments in the field of laser welding, which are used for different applications. The first section provides an overview of laser welding basics and then moves on to the developments such as high-power CO2 laser welding, laser micro-welding, and solid-state laser welding technologies. The second section underlines laser welding instruments used for joining different materials such as titanium, aluminum, and magnesium alloys, ceramics, and plastics. The third section highlights the advances in innovative laser welding methods with discussions on the applications of laser welding robots to improve the modeling and simulation of this technique. Lastly, the fourth section focuses on the use of laser welding technology in various industries including aerospace, automotive, railway, etc. The present Handbook is a practical reference for scholars, engineers, and professionals using laser welding techniques or requiring an understanding of the field of laser welding technologies.",reviewType:"peer-reviewed",bibtexUrl:"/chapter/bibtex/80478",risUrl:"/chapter/ris/80478",signatures:"Morteza Tayebi, Hedayat Mohammad Soltani and Ali Rajaee",book:{id:"11080",type:"book",title:"Engineering Principles - Welding and Residual Stresses",subtitle:null,fullTitle:"Engineering Principles - Welding and Residual Stresses",slug:null,publishedDate:null,bookSignature:"Dr. Kavian Omar Cooke and Prof. Ronaldo Cozza",coverURL:"https://cdn.intechopen.com/books/images_new/11080.jpg",licenceType:"CC BY 3.0",editedByType:null,isbn:"978-1-80355-385-6",printIsbn:"978-1-80355-384-9",pdfIsbn:"978-1-80355-386-3",isAvailableForWebshopOrdering:!0,editors:[{id:"138778",title:"Dr.",name:"Kavian",middleName:"Omar",surname:"Cooke",slug:"kavian-cooke",fullName:"Kavian Cooke"}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"}},authors:null,sections:[{id:"sec_1",title:"1. Introduction",level:"1"},{id:"sec_2",title:"2. Laser welding process",level:"1"},{id:"sec_3",title:"3. Advantages of laser beam welding",level:"1"},{id:"sec_3_2",title:"3.1 Ability to join complex joints and high accuracy",level:"2"},{id:"sec_4_2",title:"3.2 Low heat input",level:"2"},{id:"sec_5_2",title:"3.3 Compatibility and replicability",level:"2"},{id:"sec_6_2",title:"3.4 High-strength joints",level:"2"},{id:"sec_7_2",title:"3.5 Appearance, precision, and cleanliness",level:"2"},{id:"sec_9",title:"4. Laser welding limitations",level:"1"},{id:"sec_10",title:"5. Laser sources and stimulated emission",level:"1"},{id:"sec_11",title:"6. Optical resonator",level:"1"},{id:"sec_12",title:"7. Laser welding procedure",level:"1"},{id:"sec_13",title:"8. Types of laser welding based on laser sources",level:"1"},{id:"sec_14",title:"9. Types of laser welding based on welding method",level:"1"},{id:"sec_14_2",title:"9.1 Conduction welding",level:"2"},{id:"sec_15_2",title:"9.2 Conduction/penetration welding",level:"2"},{id:"sec_16_2",title:"9.3 Keyhole welding",level:"2"},{id:"sec_18",title:"10. Variables affecting laser welding",level:"1"},{id:"sec_18_2",title:"10.1 Parameters",level:"2"},{id:"sec_18_3",title:"10.1.1 Parameters related to the laser source",level:"3"},{id:"sec_19_3",title:"10.1.2 Parameters related to the operation of the system and the welding process",level:"3"},{id:"sec_21_2",title:"10.2 Effect of laser source type",level:"2"},{id:"sec_22_2",title:"10.3 Pulse shape",level:"2"},{id:"sec_23_2",title:"10.4 Peak power",level:"2"},{id:"sec_24_2",title:"10.5 Time width or pulse width",level:"2"},{id:"sec_25_2",title:"10.6 Pulse energy",level:"2"},{id:"sec_26_2",title:"10.7 Frequency",level:"2"},{id:"sec_27_2",title:"10.8 Average power",level:"2"},{id:"sec_28_2",title:"10.9 Power intensity or density",level:"2"},{id:"sec_29_2",title:"10.10 Optical specifications of the laser beam focusing system in the center",level:"2"},{id:"sec_31",title:"11. Joint and adaptation design (fit-up)",level:"1"},{id:"sec_32",title:"12. Seam welding",level:"1"},{id:"sec_33",title:"13. Applications of laser welding",level:"1"},{id:"sec_34",title:"14. Conclusions",level:"1"},{id:"sec_38",title:"Conflict of interest",level:"1"}],chapterReferences:[{id:"B1",body:'Svenungsson J, Choquet I, Kaplan AFH. Laser welding process – A review of keyhole welding modelling. Physics Procedia. 2015;78:182-191'},{id:"B2",body:'Stavridis J, Papacharalampopoulos A, Stavropoulos P. Quality assessment in laser welding: A critical review. International Journal of Advanced Manufacturing Technology. 2018;94:1-23'},{id:"B3",body:'Katayama S. Handbook of Laser Welding Technologies. Elsevier Science, Woodhead Publishing; 2013'},{id:"B4",body:'Milonni PW, Eberly JH. Laser Physics. Hoboken, New Jersey: John Wiley & Sons, Inc.; 2010'},{id:"B5",body:'Dawes CT. Laser Welding: A Practical Guide. Elsevier Science, Woodhead Publishing; 1992. ISBN: 9781855730342'},{id:"B6",body:'Katayama S. Fundamentals and Details of Laser Welding. 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Characterization of laser beam offset welding of titanium to steel with 38Zn-61Cu alloy filler. Optics and Laser Technology. 2020;127:106195'},{id:"B62",body:'Fang Y, Jiang X, Song T, Mo D, Luo Z. Pulsed laser welding of Ti-6Al-4V titanium alloy to AISI 316L stainless steel using Cu/Nb bilayer. Materials Letters. 2019;244:163-166'},{id:"B63",body:'Zhang Y, Chen Y, Zhou J, Sun D, Li H. Experimental and numerical study on microstructure and mechanical properties for laser welding-brazing of TC4 titanium alloy and 304 stainless steel with Cu-Base filler metal. Journal of Materials Research and Technology. 2020;9(1):465-477'},{id:"B64",body:'Chattopadhyay A, Muvvala G, Sarkar S, Racherla V, Nath AK. Mitigation of cracks in laser welding of titanium and stainless steel by In-situ nickel interlayer deposition. Journal of Materials Processing Technology. 2022;300:117403'},{id:"B65",body:'Gook S, Krieger S, Gumenyuk A, El-Batahgy AM, Rethmeier M. 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Based on your preferences and the stage of your scientific projects, you have multiple options for publishing your scientific research with IntechOpen:
The Open Access publishing model followed by IntechOpen eliminates subscription charges and pay-per-view fees, thus enabling readers to access research at no cost to themselves. In order to sustain these operations, and keep our publications freely accessible, we levy an Open Access Publishing Fee on all manuscripts accepted for publication to help cover the costs of editorial work and the production of books.
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\r\n\t4. Climate Change and Environmental Sustainability comprising SDG 13 on Climate Action, SDG 14 on Life Below Water, and SDG 15 on Life on Land
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\r\n\t5. Urban Planning and Environmental Management embracing SDG 7 on Affordable Clean Energy, SDG 9 on Industry, Innovation and Infrastructure, and SDG 11 on Sustainable Cities and Communities.
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Since November 2009 she is working as a Teaching Assistant at the Faculty of Pharmacy, Department of Clinical Biochemistry. In 2011 she completed part of her research and PhD work at Institute of Genetics and Molecular Medicine, University of Edinburgh. She finished her PhD entitled The influence of the proinflammatory cytokines on the RANK/RANKL/OPG in bone tissue of osteoporotic and osteoarthritic patients in 2012. From 2014-2016 she worked at the Institute of Biomedical Sciences, University of Aberdeen as a postdoctoral research fellow on UK Arthritis research project where she gained knowledge in mesenchymal stem cells and regenerative medicine. She returned back to University of Ljubljana, Faculty of Pharmacy in 2016. She is currently leading project entitled Mesenchymal stem cells-the keepers of tissue endogenous regenerative capacity facing up to aging of the musculoskeletal system funded by Slovenian Research Agency.",institutionString:null,institution:{name:"University of Ljubljana",country:{name:"Slovenia"}}},{id:"357453",title:"Dr.",name:"Radheshyam",middleName:null,surname:"Maurya",slug:"radheshyam-maurya",fullName:"Radheshyam Maurya",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/357453/images/16535_n.jpg",biography:null,institutionString:null,institution:{name:"University of Hyderabad",country:{name:"India"}}},{id:"311457",title:"Dr.",name:"Júlia",middleName:null,surname:"Scherer Santos",slug:"julia-scherer-santos",fullName:"Júlia Scherer Santos",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/311457/images/system/311457.jpg",biography:"Dr. Júlia Scherer Santos works in the areas of cosmetology, nanotechnology, pharmaceutical technology, beauty, and aesthetics. Dr. Santos also has experience as a professor of graduate courses. Graduated in Pharmacy, specialization in Cosmetology and Cosmeceuticals applied to aesthetics, specialization in Aesthetic and Cosmetic Health, and a doctorate in Pharmaceutical Nanotechnology. Teaching experience in Pharmacy and Aesthetics and Cosmetics courses. She works mainly on the following subjects: nanotechnology, cosmetology, pharmaceutical technology, aesthetics.",institutionString:"Universidade Federal de Juiz de Fora",institution:{name:"Universidade Federal de Juiz de Fora",country:{name:"Brazil"}}},{id:"219081",title:"Dr.",name:"Abdulsamed",middleName:null,surname:"Kükürt",slug:"abdulsamed-kukurt",fullName:"Abdulsamed Kükürt",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRNVJQA4/Profile_Picture_2022-03-07T13:23:04.png",biography:"Dr. Kükürt graduated from Uludağ University in Turkey. He started his academic career as a Research Assistant in the Department of Biochemistry at Kafkas University. In 2019, he completed his Ph.D. program in the Department of Biochemistry at the Institute of Health Sciences. He is currently working at the Department of Biochemistry, Kafkas University. He has 27 published research articles in academic journals, 11 book chapters, and 37 papers. He took part in 10 academic projects. He served as a reviewer for many articles. He still serves as a member of the review board in many academic journals. His research interests include biochemistry, oxidative stress, reactive species, antioxidants, lipid peroxidation, inflammation, reproductive hormones, phenolic compounds, female infertility.",institutionString:"Kafkas University",institution:{name:"Kafkas University",country:{name:"Turkey"}}},{id:"178366",title:"Associate Prof.",name:"Volkan",middleName:null,surname:"Gelen",slug:"volkan-gelen",fullName:"Volkan Gelen",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/178366/images/system/178366.jpg",biography:"Volkan Gelen is a Physiology specialist who received his veterinary degree from Kafkas University in 2011. Between 2011-2015, he worked as an assistant at Atatürk University, Faculty of Veterinary Medicine, Department of Physiology. In 2016, he joined Kafkas University, Faculty of Veterinary Medicine, Department of Physiology as an assistant professor. Dr. Gelen has been engaged in various academic activities at Kafkas University since 2016. There he completed 5 projects and has 3 ongoing projects. He has 60 articles published in scientific journals and 20 poster presentations in scientific congresses. His research interests include physiology, endocrine system, cancer, diabetes, cardiovascular system diseases, and isolated organ bath system studies.",institutionString:"Kafkas University",institution:{name:"Kafkas University",country:{name:"Turkey"}}},{id:"418963",title:"Dr.",name:"Augustine Ododo",middleName:"Augustine",surname:"Osagie",slug:"augustine-ododo-osagie",fullName:"Augustine Ododo Osagie",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/418963/images/16900_n.jpg",biography:"Born into the family of Osagie, a prince of the Benin Kingdom. I am currently an academic in the Department of Medical Biochemistry, University of Benin. Part of the duties are to teach undergraduate students and conduct academic research.",institutionString:null,institution:{name:"University of Benin",country:{name:"Nigeria"}}},{id:"192992",title:"Prof.",name:"Shagufta",middleName:null,surname:"Perveen",slug:"shagufta-perveen",fullName:"Shagufta Perveen",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/192992/images/system/192992.png",biography:"Prof. Shagufta Perveen is a Distinguish Professor in the Department of Pharmacognosy, College of Pharmacy, King Saud University, Riyadh, Saudi Arabia. Dr. Perveen has acted as the principal investigator of major research projects funded by the research unit of King Saud University. She has more than ninety original research papers in peer-reviewed journals of international repute to her credit. She is a fellow member of the Royal Society of Chemistry UK and the American Chemical Society of the United States.",institutionString:"King Saud University",institution:{name:"King Saud University",country:{name:"Saudi Arabia"}}},{id:"49848",title:"Dr.",name:"Wen-Long",middleName:null,surname:"Hu",slug:"wen-long-hu",fullName:"Wen-Long Hu",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/49848/images/system/49848.jpg",biography:"Wen-Long Hu is Chief of the Division of Acupuncture, Department of Chinese Medicine at Kaohsiung Chang Gung Memorial Hospital, as well as an adjunct associate professor at Fooyin University and Kaohsiung Medical University. Wen-Long is President of Taiwan Traditional Chinese Medicine Medical Association. He has 28 years of experience in clinical practice in laser acupuncture therapy and 34 years in acupuncture. He is an invited speaker for lectures and workshops in laser acupuncture at many symposiums held by medical associations. He owns the patent for herbal preparation and producing, and for the supercritical fluid-treated needle. Dr. Hu has published three books, 12 book chapters, and more than 30 papers in reputed journals, besides serving as an editorial board member of repute.",institutionString:"Kaohsiung Chang Gung Memorial Hospital",institution:{name:"Kaohsiung Chang Gung Memorial Hospital",country:{name:"Taiwan"}}},{id:"298472",title:"Prof.",name:"Andrey V.",middleName:null,surname:"Grechko",slug:"andrey-v.-grechko",fullName:"Andrey V. Grechko",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/298472/images/system/298472.png",biography:"Andrey Vyacheslavovich Grechko, Ph.D., Professor, is a Corresponding Member of the Russian Academy of Sciences. He graduated from the Semashko Moscow Medical Institute (Semashko National Research Institute of Public Health) with a degree in Medicine (1998), the Clinical Department of Dermatovenerology (2000), and received a second higher education in Psychology (2009). Professor A.V. Grechko held the position of Сhief Physician of the Central Clinical Hospital in Moscow. He worked as a professor at the faculty and was engaged in scientific research at the Medical University. Starting in 2013, he has been the initiator of the creation of the Federal Scientific and Clinical Center for Intensive Care and Rehabilitology, Moscow, Russian Federation, where he also serves as Director since 2015. He has many years of experience in research and teaching in various fields of medicine, is an author/co-author of more than 200 scientific publications, 13 patents, 15 medical books/chapters, including Chapter in Book «Metabolomics», IntechOpen, 2020 «Metabolomic Discovery of Microbiota Dysfunction as the Cause of Pathology».",institutionString:"Federal Research and Clinical Center of Intensive Care Medicine and Rehabilitology",institution:null},{id:"199461",title:"Prof.",name:"Natalia V.",middleName:null,surname:"Beloborodova",slug:"natalia-v.-beloborodova",fullName:"Natalia V. Beloborodova",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/199461/images/system/199461.jpg",biography:'Natalia Vladimirovna Beloborodova was educated at the Pirogov Russian National Research Medical University, with a degree in pediatrics in 1980, a Ph.D. in 1987, and a specialization in Clinical Microbiology from First Moscow State Medical University in 2004. She has been a Professor since 1996. Currently, she is the Head of the Laboratory of Metabolism, a division of the Federal Research and Clinical Center of Intensive Care Medicine and Rehabilitology, Moscow, Russian Federation. N.V. Beloborodova has many years of clinical experience in the field of intensive care and surgery. She studies infectious complications and sepsis. She initiated a series of interdisciplinary clinical and experimental studies based on the concept of integrating human metabolism and its microbiota. Her scientific achievements are widely known: she is the recipient of the Marie E. Coates Award \\"Best lecturer-scientist\\" Gustafsson Fund, Karolinska Institutes, Stockholm, Sweden, and the International Sepsis Forum Award, Pasteur Institute, Paris, France (2014), etc. Professor N.V. Beloborodova wrote 210 papers, five books, 10 chapters and has edited four books.',institutionString:"Federal Research and Clinical Center of Intensive Care Medicine and Rehabilitology",institution:null},{id:"354260",title:"Ph.D.",name:"Tércio Elyan",middleName:"Azevedo",surname:"Azevedo Martins",slug:"tercio-elyan-azevedo-martins",fullName:"Tércio Elyan Azevedo Martins",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/354260/images/16241_n.jpg",biography:"Graduated in Pharmacy from the Federal University of Ceará with the modality in Industrial Pharmacy, Specialist in Production and Control of Medicines from the University of São Paulo (USP), Master in Pharmaceuticals and Medicines from the University of São Paulo (USP) and Doctor of Science in the program of Pharmaceuticals and Medicines by the University of São Paulo. Professor at Universidade Paulista (UNIP) in the areas of chemistry, cosmetology and trichology. Assistant Coordinator of the Higher Course in Aesthetic and Cosmetic Technology at Universidade Paulista Campus Chácara Santo Antônio. Experience in the Pharmacy area, with emphasis on Pharmacotechnics, Pharmaceutical Technology, Research and Development of Cosmetics, acting mainly on topics such as cosmetology, antioxidant activity, aesthetics, photoprotection, cyclodextrin and thermal analysis.",institutionString:null,institution:{name:"University of Sao Paulo",country:{name:"Brazil"}}},{id:"334285",title:"Ph.D. Student",name:"Sameer",middleName:"Kumar",surname:"Jagirdar",slug:"sameer-jagirdar",fullName:"Sameer Jagirdar",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/334285/images/14691_n.jpg",biography:"I\\'m a graduate student at the center for biosystems science and engineering at the Indian Institute of Science, Bangalore, India. I am interested in studying host-pathogen interactions at the biomaterial interface.",institutionString:null,institution:{name:"Indian Institute of Science Bangalore",country:{name:"India"}}},{id:"329795",title:"Dr.",name:"Mohd Aftab",middleName:"Aftab",surname:"Siddiqui",slug:"mohd-aftab-siddiqui",fullName:"Mohd Aftab Siddiqui",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/329795/images/15648_n.jpg",biography:"Dr. Mohd Aftab Siddiqui is currently working as Assistant Professor in the Faculty of Pharmacy, Integral University, Lucknow for the last 6 years. He has completed his Doctor in Philosophy (Pharmacology) in 2020 from Integral University, Lucknow. He completed his Bachelor in Pharmacy in 2013 and Master in Pharmacy (Pharmacology) in 2015 from Integral University, Lucknow. He is the gold medalist in Bachelor and Master degree. He qualified GPAT -2013, GPAT -2014, and GPAT 2015. His area of research is Pharmacological screening of herbal drugs/ natural products in liver and cardiac diseases. He has guided many M. Pharm. research projects. He has many national and international publications.",institutionString:"Integral University",institution:null},{id:"255360",title:"Dr.",name:"Usama",middleName:null,surname:"Ahmad",slug:"usama-ahmad",fullName:"Usama Ahmad",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/255360/images/system/255360.png",biography:"Dr. Usama Ahmad holds a specialization in Pharmaceutics from Amity University, Lucknow, India. He received his Ph.D. degree from Integral University. Currently, he’s working as an Assistant Professor of Pharmaceutics in the Faculty of Pharmacy, Integral University. From 2013 to 2014 he worked on a research project funded by SERB-DST, Government of India. He has a rich publication record with more than 32 original articles published in reputed journals, 3 edited books, 5 book chapters, and a number of scientific articles published in ‘Ingredients South Asia Magazine’ and ‘QualPharma Magazine’. He is a member of the American Association for Cancer Research, International Association for the Study of Lung Cancer, and the British Society for Nanomedicine. Dr. Ahmad’s research focus is on the development of nanoformulations to facilitate the delivery of drugs that aim to provide practical solutions to current healthcare problems.",institutionString:"Integral University",institution:{name:"Integral University",country:{name:"India"}}},{id:"30568",title:"Prof.",name:"Madhu",middleName:null,surname:"Khullar",slug:"madhu-khullar",fullName:"Madhu Khullar",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/30568/images/system/30568.jpg",biography:"Dr. Madhu Khullar is a Professor of Experimental Medicine and Biotechnology at the Post Graduate Institute of Medical Education and Research, Chandigarh, India. She completed her Post Doctorate in hypertension research at the Henry Ford Hospital, Detroit, USA in 1985. She is an editor and reviewer of several international journals, and a fellow and member of several cardiovascular research societies. Dr. Khullar has a keen research interest in genetics of hypertension, and is currently studying pharmacogenetics of hypertension.",institutionString:"Post Graduate Institute of Medical Education and Research",institution:{name:"Post Graduate Institute of Medical Education and Research",country:{name:"India"}}},{id:"223233",title:"Prof.",name:"Xianquan",middleName:null,surname:"Zhan",slug:"xianquan-zhan",fullName:"Xianquan Zhan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/223233/images/system/223233.png",biography:"Xianquan Zhan received his MD and Ph.D. in Preventive Medicine at West China University of Medical Sciences. He received his post-doctoral training in oncology and cancer proteomics at the Central South University, China, and the University of Tennessee Health Science Center (UTHSC), USA. He worked at UTHSC and the Cleveland Clinic in 2001–2012 and achieved the rank of associate professor at UTHSC. Currently, he is a full professor at Central South University and Shandong First Medical University, and an advisor to MS/PhD students and postdoctoral fellows. He is also a fellow of the Royal Society of Medicine and European Association for Predictive Preventive Personalized Medicine (EPMA), a national representative of EPMA, and a member of the American Society of Clinical Oncology (ASCO) and the American Association for the Advancement of Sciences (AAAS). He is also the editor in chief of International Journal of Chronic Diseases & Therapy, an associate editor of EPMA Journal, Frontiers in Endocrinology, and BMC Medical Genomics, and a guest editor of Mass Spectrometry Reviews, Frontiers in Endocrinology, EPMA Journal, and Oxidative Medicine and Cellular Longevity. He has published more than 148 articles, 28 book chapters, 6 books, and 2 US patents in the field of clinical proteomics and biomarkers.",institutionString:"Shandong First Medical University",institution:{name:"Affiliated Hospital of Shandong Academy of Medical Sciences",country:{name:"China"}}},{id:"297507",title:"Dr.",name:"Charles",middleName:"Elias",surname:"Assmann",slug:"charles-assmann",fullName:"Charles Assmann",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/297507/images/system/297507.jpg",biography:"Charles Elias Assmann is a biologist from Federal University of Santa Maria (UFSM, Brazil), who spent some time abroad at the Ludwig-Maximilians-Universität München (LMU, Germany). He has Masters Degree in Biochemistry (UFSM), and is currently a PhD student at Biochemistry at the Department of Biochemistry and Molecular Biology of the UFSM. His areas of expertise include: Biochemistry, Molecular Biology, Enzymology, Genetics and Toxicology. He is currently working on the following subjects: Aluminium toxicity, Neuroinflammation, Oxidative stress and Purinergic system. Since 2011 he has presented more than 80 abstracts in scientific proceedings of national and international meetings. Since 2014, he has published more than 20 peer reviewed papers (including 4 reviews, 3 in Portuguese) and 2 book chapters. He has also been a reviewer of international journals and ad hoc reviewer of scientific committees from Brazilian Universities.",institutionString:"Universidade Federal de Santa Maria",institution:{name:"Universidade Federal de Santa Maria",country:{name:"Brazil"}}},{id:"217850",title:"Dr.",name:"Margarete Dulce",middleName:null,surname:"Bagatini",slug:"margarete-dulce-bagatini",fullName:"Margarete Dulce Bagatini",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/217850/images/system/217850.jpeg",biography:"Dr. Margarete Dulce Bagatini is an associate professor at the Federal University of Fronteira Sul/Brazil. She has a degree in Pharmacy and a PhD in Biological Sciences: Toxicological Biochemistry. She is a member of the UFFS Research Advisory Committee\nand a member of the Biovitta Research Institute. She is currently:\nthe leader of the research group: Biological and Clinical Studies\nin Human Pathologies, professor of postgraduate program in\nBiochemistry at UFSC and postgraduate program in Science and Food Technology at\nUFFS. She has experience in the area of pharmacy and clinical analysis, acting mainly\non the following topics: oxidative stress, the purinergic system and human pathologies, being a reviewer of several international journals and books.",institutionString:"Universidade Federal da Fronteira Sul",institution:{name:"Universidade Federal da Fronteira Sul",country:{name:"Brazil"}}},{id:"226275",title:"Ph.D.",name:"Metin",middleName:null,surname:"Budak",slug:"metin-budak",fullName:"Metin Budak",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/226275/images/system/226275.jfif",biography:"Metin Budak, MSc, PhD is an Assistant Professor at Trakya University, Faculty of Medicine. He has been Head of the Molecular Research Lab at Prof. Mirko Tos Ear and Hearing Research Center since 2018. His specializations are biophysics, epigenetics, genetics, and methylation mechanisms. He has published around 25 peer-reviewed papers, 2 book chapters, and 28 abstracts. He is a member of the Clinical Research Ethics Committee and Quantification and Consideration Committee of Medicine Faculty. His research area is the role of methylation during gene transcription, chromatin packages DNA within the cell and DNA repair, replication, recombination, and gene transcription. His research focuses on how the cell overcomes chromatin structure and methylation to allow access to the underlying DNA and enable normal cellular function.",institutionString:"Trakya University",institution:{name:"Trakya University",country:{name:"Turkey"}}},{id:"243049",title:"Dr.",name:"Anca",middleName:null,surname:"Pantea Stoian",slug:"anca-pantea-stoian",fullName:"Anca Pantea Stoian",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/243049/images/system/243049.jpg",biography:"Anca Pantea Stoian is a specialist in diabetes, nutrition, and metabolic diseases as well as health food hygiene. She also has competency in general ultrasonography.\n\nShe is an associate professor in the Diabetes, Nutrition and Metabolic Diseases Department, Carol Davila University of Medicine and Pharmacy, Bucharest, Romania. She has been chief of the Hygiene Department, Faculty of Dentistry, at the same university since 2019. Her interests include micro and macrovascular complications in diabetes and new therapies. Her research activities focus on nutritional intervention in chronic pathology, as well as cardio-renal-metabolic risk assessment, and diabetes in cancer. She is currently engaged in developing new therapies and technological tools for screening, prevention, and patient education in diabetes. \n\nShe is a member of the European Association for the Study of Diabetes, Cardiometabolic Academy, CEDA, Romanian Society of Diabetes, Nutrition and Metabolic Diseases, Romanian Diabetes Federation, and Association for Renal Metabolic and Nutrition studies. She has authored or co-authored 160 papers in national and international peer-reviewed journals.",institutionString:null,institution:{name:"Carol Davila University of Medicine and Pharmacy",country:{name:"Romania"}}},{id:"279792",title:"Dr.",name:"João",middleName:null,surname:"Cotas",slug:"joao-cotas",fullName:"João Cotas",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/279792/images/system/279792.jpg",biography:"Graduate and master in Biology from the University of Coimbra.\n\nI am a research fellow at the Macroalgae Laboratory Unit, in the MARE-UC – Marine and Environmental Sciences Centre of the University of Coimbra. My principal function is the collection, extraction and purification of macroalgae compounds, chemical and bioactive characterization of the compounds and algae extracts and development of new methodologies in marine biotechnology area. \nI am associated in two projects: one consists on discovery of natural compounds for oncobiology. The other project is the about the natural compounds/products for agricultural area.\n\nPublications:\nCotas, J.; Figueirinha, A.; Pereira, L.; Batista, T. 2018. An analysis of the effects of salinity on Fucus ceranoides (Ochrophyta, Phaeophyceae), in the Mondego River (Portugal). Journal of Oceanology and Limnology. in press. DOI: 10.1007/s00343-019-8111-3",institutionString:"Faculty of Sciences and Technology of University of Coimbra",institution:null},{id:"279788",title:"Dr.",name:"Leonel",middleName:null,surname:"Pereira",slug:"leonel-pereira",fullName:"Leonel Pereira",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/279788/images/system/279788.jpg",biography:"Leonel Pereira has an undergraduate degree in Biology, a Ph.D. in Biology (specialty in Cell Biology), and a Habilitation degree in Biosciences (specialization in Biotechnology) from the Faculty of Science and Technology, University of Coimbra, Portugal, where he is currently a professor. In addition to teaching at this university, he is an integrated researcher at the Marine and Environmental Sciences Center (MARE), Portugal. His interests include marine biodiversity (algae), marine biotechnology (algae bioactive compounds), and marine ecology (environmental assessment). Since 2008, he has been the author and editor of the electronic publication MACOI – Portuguese Seaweeds Website (www.seaweeds.uc.pt). He is also a member of the editorial boards of several scientific journals. Dr. Pereira has edited or authored more than 20 books, 100 journal articles, and 45 book chapters. He has given more than 100 lectures and oral communications at various national and international scientific events. He is the coordinator of several national and international research projects. In 1998, he received the Francisco de Holanda Award (Honorable Mention) and, more recently, the Mar Rei D. Carlos award (18th edition). He is also a winner of the 2016 CHOICE Award for an outstanding academic title for his book Edible Seaweeds of the World. In 2020, Dr. Pereira received an Honorable Mention for the Impact of International Publications from the Web of Science",institutionString:"University of Coimbra",institution:{name:"University of Coimbra",country:{name:"Portugal"}}},{id:"61946",title:"Dr.",name:"Carol",middleName:null,surname:"Bernstein",slug:"carol-bernstein",fullName:"Carol Bernstein",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/61946/images/system/61946.jpg",biography:"Carol Bernstein received her PhD in Genetics from the University of California (Davis). She was a faculty member at the University of Arizona College of Medicine for 43 years, retiring in 2011. Her research interests focus on DNA damage and its underlying role in sex, aging and in the early steps of initiation and progression to cancer. In her research, she had used organisms including bacteriophage T4, Neurospora crassa, Schizosaccharomyces pombe and mice, as well as human cells and tissues. She authored or co-authored more than 140 scientific publications, including articles in major peer reviewed journals, book chapters, invited reviews and one book.",institutionString:"University of Arizona",institution:{name:"University of Arizona",country:{name:"United States of America"}}},{id:"182258",title:"Dr.",name:"Ademar",middleName:"Pereira",surname:"Serra",slug:"ademar-serra",fullName:"Ademar Serra",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/182258/images/system/182258.jpeg",biography:"Dr. Serra studied Agronomy on Universidade Federal de Mato Grosso do Sul (UFMS) (2005). He received master degree in Agronomy, Crop Science (Soil fertility and plant nutrition) (2007) by Universidade Federal da Grande Dourados (UFGD), and PhD in agronomy (Soil fertility and plant nutrition) (2011) from Universidade Federal da Grande Dourados / Escola Superior de Agricultura Luiz de Queiroz (UFGD/ESALQ-USP). Dr. Serra is currently working at Brazilian Agricultural Research Corporation (EMBRAPA). His research focus is on mineral nutrition of plants, crop science and soil science. Dr. Serra\\'s current projects are soil organic matter, soil phosphorus fractions, compositional nutrient diagnosis (CND) and isometric log ratio (ilr) transformation in compositional data analysis.",institutionString:"Brazilian Agricultural Research Corporation",institution:{name:"Brazilian Agricultural Research Corporation",country:{name:"Brazil"}}}]}},subseries:{item:{id:"41",type:"subseries",title:"Water Science",keywords:"Water, Water resources, Freshwater, Hydrological processes, Utilization, Protection",scope:"
\r\n\tWater is not only a crucial substance needed for biological life on Earth, but it is also a basic requirement for the existence and development of the human society. Owing to the importance of water to life on Earth, early researchers conducted numerous studies and analyses on the liquid form of water from the perspectives of chemistry, physics, earth science, and biology, and concluded that Earth is a "water polo". Water covers approximately 71% of Earth's surface. However, 97.2% of this water is seawater, 21.5% is icebergs and glaciers, and only 0.65% is freshwater that can be used directly by humans. As a result, the amount of water reserves available for human consumption is limited. The development, utilization, and protection of freshwater resources has become the focus of water science research for the continued improvement of human livelihoods and society.
\r\n
\r\n\tWater exists as solid, liquid, and gas within Earth’s atmosphere, lithosphere, and biosphere. Liquid water is used for a variety of purposes besides drinking, including power generation, ecology, landscaping, and shipping. Because water is involved in various environmental hydrological processes as well as numerous aspects of the economy and human society, the study of various phenomena in the hydrosphere, the laws governing their occurrence and development, the relationship between the hydrosphere and other spheres of Earth, and the relationship between water and social development, are all part of water science. Knowledge systems for water science are improving continuously. Water science has become a specialized field concerned with the identification of its physical, chemical, and biological properties. In addition, it reveals the laws of water distribution, movement, and circulation, and proposes methods and tools for water development, utilization, planning, management, and protection. Currently, the field of water science covers research related to topics such as hydrology, water resources and water environment. It also includes research on water related issues such as safety, engineering, economy, law, culture, information, and education.
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He has chaired or acted as a technical committee member for twenty-five international forums (conferences). Dr. Shang graduated from Tsinghua University, China, in 2010 with a Ph.D. in Engineering. Prior to that, he worked as a research fellow at Harvard University from 2008 to 2009. 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