Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication

Enormous growth has taken place in electronics, especially in the field of RF communications towards the beginning of 21st century and continuously striving for better communication performance. Presently, the key concerns of RF communications is bandwidth, in the range of low/medium GHz range, to avoid frequency crowding, especially for wireless communication mobile handsets and base stations (Kim et al., 2004). In addition, reduction in signal loss, low power consumption, scaling down device size, reduction in materials and fabrication costs, and packaging of the device are main issues today. Some of these issues can be resolved, if the new generation of electroacoustic devices can be monolithically integrated with integrated circuit (IC). Conventional electroacoustic devices, used in the communication e.g. Surface Acoustic Wave (SAW) and Bulk Acoustic Wave (BAW) based systems, are widely used for today’s wireless communication. These devices are typically made on a single crystal piezoelectric substrate such as quartz, lithium niobate, and lithium tantalate (Assouar et al., 2004). Unfortunately, these substrates based electroacoustic devices are made separately and then it is wired with the signal processing chip, which has several limitations, in particular low acoustic wave velocity and high frequency device fabrication. To resolve these two core issues, thin film materials based electroacoustic devices are actively under consideration [Bender et al., 2003]. Where, a crystalline film is grown on a particular substrate, especially silicon wafer and electroacoustic device is made out of crystalline film. Thus, the electroacoustic device can be integrated with the signal processing circuit. Apart from the silicon wafer as a base material for crystalline film deposition, a variety of other substrates are also explored for academic and technology interests. Furthermore, to get electroacoustic devices of better quality in terms of high frequency and high quality factor (Q), the piezoelectric property of the film is also exploited with different type of device concept called “Micro-Electro-Mechanical Systems” (MEMS). Thin film bulk acoustic resonators (TFBAR) comes under this MEMS devices, where the crystalline film is made to resonate at RF frequency. These MEMS


Properties of AlN film
AlN is a III-V family compound having hexagonal wurtzite crystal structure with lattice constants a = 3.112 Å and c = 4.982 Å (Yim et al., 1973). In this structure, each Al atom is surrounded by four N atoms, forming a distorted tetrahedron with three Al---N (i) (i = 1, 2,3) bonds named B 1 and one Al---N 0 bond in the direction of the c-axis, named B 2 . The bond lengths of B 1 and B 2 are 1.885 Å and 1.917 Å, respectively. The bond angle N 0 ---Al---N i is 107.7º and that for N 1 ---Al---N 2 is 110.5 º (Xu et al., 2001). AlN has gained ground in semiconductor industry because of its unique electrical, mechanical, piezoelectric and other properties ( Table 1). Some of these noteworthy properties are wide bandgap, high thermal conductivity, high SAW velocity, moderately high electromechanical coupling coefficient, high temperature stability, chemical stability to atmospheric gases below 700 ºC, high resistivity, low coefficient of thermal expansion (close to Si), high dielectric constant and mechanical hardness (Xu et al., 2001;Strite et al., 1992;Wang et al., 1994). Its high thermal conductivity (about 100 times that of SiO 2 and roughly equal to that of silicon) and electrical insulating property can prove to be a good dielectric layer for a new generation of integrated circuit devices, particularly in metal insulator semiconductor (MIS) devices. High heat dissipation of AlN can significantly enhance device lifetime and efficiency. AlN film with (002) preferred orientation (c-axis) has maximum www.intechopen.com Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication 565 piezoelectricity among all other orientations of its crystal structure (Naik et al., 1999). Furthermore, its lattice matching is near to that of silicon and thus less stress is expected to be generated at the AlN/silicon interface. Owing to these properties, AlN films have received great interest as an electronic material for thermal dissipation, dielectric and passivation layers for ICs, acoustic devices, resonators and optoelectronic devices.

Synthesis of AlN film
Depending on the intended application, various techniques have been implemented for synthesizing AlN films; namely, molecular beam epitaxy (MBE), reactive evaporation, pulsed laser deposition (PLD), chemical vapour deposition (CVD) and sputtering. Among these techniques, sputtering has the advantage of low-temperature deposition, ease of synthesis, less expensive, non-toxic, good quality films with a fairly smooth surface [Kar et al., 2006;Kar et al., 2007]. In addition, sputtering technique has also CMOS process compatibility. In sputtering technique, plasma is created between the two electrodes by applying high voltage in low pressure. The plasma region contains, positive ions, electrons and neutral sputtering gas, thus the plasma behaves like a conducting medium. Usually, argon gas is used as a sputtering gas. The material that is to be sputtered is called target and it is fixed to the negatively charged electrode. The other electrode is called anode, which is grounded so that the ratio of the target to anode area is significantly reduced. This electric configuration of the sputtering system makes high electric field at the target and that enhances the rate of sputtering. During sputtering process, the energetic ions strike the target and dislodge (sputter) the target atoms. These dislodged atoms travel through the plasma in a vapour state and stick to the surface of wafers, where they condense and form the film. AlN film can be deposited either by directly using the AlN target or by sputtering of aluminum metal in presence of argon and nitrogen gas. The sputtered aluminum atoms react with the nitrogen gas and form AlN film. This process of film deposition is called "reactive sputtering deposition". The sputtering parameters are required to be optimized for desired morphological and electrical properties. These deposition parameters are mainly sputtering pressure, wafer to target distance, sputtering power and wafer temperature. AlN film deposition by reactive sputter deposition technique requires nitrogen as a reactive gas, where it is introduced into the sputtering chamber along with inert argon gas. Argon ions produced in the plasma due to sputtering power and thereafter they strike to the aluminum target and sputter aluminum atoms. These aluminum atoms react with nitrogen and form AlN compound and that deposit on the wafer. Hence, the gas flow ratios need to be optimized. To increase sputtering rate, magnets are placed under the aluminum target, so that magnetic field and the electric field are perpendicular to each other. This configuration of sputtering system is called "magnetron sputtering technique". In the magnetron sputtering, electrons travel in spiral motion in the plasma region. This increases the collision of electrons to neutral argon atoms significantly and that increases argon ions in many folds, thus sputtering rate becomes high. AlN film can be deposited by DC (direct current) and RF (radio frequency, 13.56 MHz) magnetron sputtering modes. In the DC mode of sputter deposition, the target material must be conductive, so that plasma can sustain. If trace of impurity is present in the system, the surface of the aluminum target becomes contaminated and target poisoning takes place.
On the other hand, RF sputtering has the major advantages to produce good quality film, high deposition rate and less chance of target poisoning. For these reasons, RF sputtering technique is preferred than the DC sputtering technique. To obtain well oriented crystalline AlN films for SAW and MEMS structures, the RF sputtering parameters need to be optimized. The sputtering parameters are: RF power, substrate temperature, sputtering pressure, nitrogen concentration and target-substrate distances (D ts ). AlN films are deposited on CMOS IC compatibility silicon (100) wafer by the RF reactive magnetron sputtering. The change in morphological and electrical properties of the AlN films with the growth parameters are reported in following section.

RF power
Amorphous AlN film is found at lower RF sputtering power (100 W), but films became (002) oriented at a sputtering power of 200 W. Further increase of RF power to 400 W, a significant increase in (002) orientation has taken place. This is due to the increase of kinetic energy of atoms that leads to atomic movements on the substrate surface as a result of higher RF power. These newly arrived surface atoms are called "ad-atom". Higher sputtering power increases the AlN grain size that leads to increase in surface roughness as shown in scanning electron microscope (SEM) images ( Fig. 1) (Kar et al., 2009).

Substrate temperature
The structural and morphological properties of the deposited AlN films are strongly dependent on the kinetics of the sputtered atoms arrived at the substrate. The kinetics of sputtered atoms depends on the sputtering parameters. For instance, substrate temperature increases the ad-atom mobility and changes the film morphology significantly. One such illustrations of morphological change with temperature are seen from the X-Ray diffraction (XRD) studies. It is clearly seen from the XRD studies that the c-axis oriented AlN (002) peaks become prominent at moderate temperature range (200-300 ºC), but degrades significantly at 400 ºC (Kar et al., 2006). This can be attributed to the structural disorderness resulting from the incorporation of impurity atoms at higher temperature (Wang, 2000). The amount of contamination depends on the sputtering deposition system and process related factors, such as base pressure, temperature, gas purity and the partial pressure of moisture, etc. (Naik et al., 1999). Furthermore, smaller grain size with smoother surfaces is observed at lower deposition temperature, and that increases with temperature ( Fig. 2). A possible reason may be that the smaller grains grow and merge to form bigger grain, due to the higher thermal energy.

Sputtering pressure
The variation in crystal orientation with different sputtering pressure are observed from the XRD studies, where the intensity of (002) orientation increases with the deposition pressure and attained a maximum value at 6×10 -3 mbar. On further increase to a deposition pressure of 8×10 -3 mbar, the (002) crystal orientation of the AlN film is changed abruptly to the (100) orientation with lesser intensity. The deposited atoms may have altered their direction, energy, momentum and mobility due to the decrease in mean free path of the atoms with sputtering pressure. The hexagonal wurtzite structure of AlN has two kinds of Al-N bond named as B 1 and B 2. These bonds B 1 and B 2 together correspond to (110) and (002) planes, where B 1 corresponds to (100) plane. The formation energy of B 2 is relatively larger that of B 1 (Cheng et al., 2003). Hence, the energy required for sputtering species to orient along c-axis is larger than the other possible planes. At low pressure, sputtering species possess enough energy to form hexagonal wurtzite crystalline structure on substrate surface. It is also reported that the surface roughness of the film increases with the increase in deposition pressure. The grain size is increased till 6×10 -3 mbar deposition pressure and then it reduced to 80 nm at 8×10 -3 mbar (Kar et al., 2006). In addition, inhomogeneous patterns on the surface are also observed at this higher pressure (Fig. 3). It is also observed that the AlN film has changed its orientation with less Al-N bond density and reduction of grain size at 8×10 -3 mbar sputtering pressure. Hence, it is inferred that the structural disorder and/or the change in the Al-N bond density/angles must have taken place at this particular sputtering pressure.

Gas flow ratio
At lower nitrogen concentration, the intensity of (100) peak is relatively more prominent than (002), but the trend reverses with higher nitrogen concentration (Kar et al., 2006). At 80% N 2 , a highly oriented (002) peak is observed without trace of (100) orientation. Lower argon and higher nitrogen gas concentration results slower aluminum sputtering rate. If the time interval for the arrival of Al species at the wafer surface is slower, the Al atom gets enough time to react with N 2 . This increases the probability of Al-N bond formation and bonded Al-N molecules get more time to adjust themselves along (002) orientation on the substrate. On the other hand, at higher argon concentration, Al does not get enough time for complete nitridation due to higher sputtering rate. In addition, faster arrival of the Al at the substrate surface results not only in a poor AlN bond, but also provides less time for the newly formed AlN to arrange itself along c-axis. A surface texture of smaller grain size, smoother, homogeneous and dense granular microstructures has been observed at higher concentrations of nitrogen. This indicates a low surface mobility of the ad-atoms at high www.intechopen.com Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication 569 nitrogen concentration. In contrast, bigger grain size with increased roughness is observed at lower nitrogen concentration, where the newly formed smaller grain merges together with a previously formed grain and becomes bigger in size. The size and distribution of the micrograins is quite uniform at 80% nitrogen concentration. At lower nitrogen concentrations, Ar + ions transfer more energy to the Al target during bombardment, generating more aluminum atoms that make clusters with incomplete nitridation of aluminum on the wafer surface. This leads to formation of fewer bonds, a poor c-axis orientated and a rough film (Fig 4 (a)).

Target-substrate distance
The kinetics of the sputtered species arriving at the substrate controls the ad-atom mobility and atomic rearrangement that governs the microstructure of the film. From the XRD studies, it is observed that the intensity of c-axis orientation of the film decreases with increase in target to substrate distance D ts (Kar et al., 2008). At shorter D ts , the Ar ions travel almost normal to the target due to the high electrical field and knock out Al atoms around perpendicular to the target. Because of short deposition path, the probability of collisions of the Al atom with gas atoms is low. Therefore, a good quality film is obtained at lower D ts (5 cm). On the other hand, at larger D ts , the chances of Al collision with gas molecules is increased. In this process Al atoms lose its kinetic energy significantly as well as alter deposition angles. These randomly arriving Al atoms, with lesser energy, cause selfshadowing effects and reduce atomic migration that leads to generation of voids in the film (Lee et al., 2003). The grain size of the AlN film increases with D ts . For lower D ts , smaller grain with minimum surface roughness is observed (Fig. 4(b)) and a coarser grain is found at the highest D ts (8 cm). Surface roughness of the synthesized AlN films are also increases with D ts . The kinetic energy of deposited species is considered to be a major factor for the grain size and the surface roughness of the film.

Variation of electrical properties with sputtering parameter
The AlN film can be used as a dielectric layer in IC; hence, the electric charges are essential to study with the sputter deposition parameters. Electric charges like Q in and D it are highly governed by the sputter deposition parameters. A decrease in the Q in is observed with sputtering power, where as D it is found to be minimum at moderate RF power. At higher temperature, better electrical properties in the bulk as well as the interface of sputtered AlN films are reported; this is mainly due to the formation of bigger grain size and its associated effects. It is reported that the defects produced by stress, voids and incorporation of gases are main responsible cause for the monotonic increase in Q in . The D it has a minimum value at 6×10 -3 mbar sputtering pressure. The Q in and D it increases with nitrogen concentration. This will have a deleterious effect for silicon-based devices at higher nitrogen concentration. Rise in the Q in and D it with the increase in D ts is also reported. It is seen that at larger D ts , the morphological as well as the electrical properties of the AlN films deteriorates, whereas, at shorter D ts the quality of the film comes out to be better (Kar et al., 2007). Apart from the electric charges, it is observed that better crystallinity posses AlN films of higher dielectric constant.

Post-deposition annealing effect
AlN film may see high temperature, if AlN film is monolithically integrated during IC fabrication. Post-deposition heat treatment significantly affects the morphology and electric charges of AlN film. The post-deposition thermal treatments (annealing) of AlN film are generally carried out by two distinguished modes; namely, Rapid Thermal Annealing (RTA) and conventional furnace annealing.

Rapid thermal annealing (RTA) process
The XRD studies show that the intensity of c-axis (002) orientation increases upto annealing temperature of 800 ºC in nitrogen ambient and then it marginally decreases at 1000 ºC (Kar et al., 2005). The shift in XRD diffraction peaks is reported at higher temperatures, which may be due to the generation of stress. Granular worm-like nanostructures are found in asdeposited AlN films (Fig. 5), whereas cracks are observed for annealing at 1000 ºC. A short duration of heat pulse by RTA is barely sufficient to modulate the film surface, but not enough to activate the grains of the AlN films to merge themselves to form bigger grains. Appearances of cracks are due to the stress developed in the film. The thermal coefficient mismatch between the AlN and silicon substrate may be generated from the fast ramp up and ramp down annealing heat cycle during rapid thermal annealing. The position and density of cracks depend strongly on the defects, dislocations and the structural relaxation of grain boundaries. The surface roughness is considerably increased for the film annealed at higher temperatures due to the surface modulation.

Furnace annealing
The intensity of the (002) peak increases with furnace annealing temperature, where the atoms acquire adequate activation energy to become (002) oriented. Sometimes, many of the atoms may not be at the crystal lattice site in the as-deposited AlN film, which causes the lattice strain and the formation of microvoids. During conventional furnace annealing, atoms get enough time to acquire sufficient kinetic energy and occupy relative equilibrium positions that minimize the lattice strain and microvoids, which results in a better crystalline film. Furthermore, the furnace annealing process minimizes the dislocations and the other structural defects and forms a better stoichiometric material. From the SEM micrographs, it is observed that the granular worm-like textures grow bigger in size with increased surface roughness as a result of annealing (Fig. 6). The possible reasons for increase in the grain size and the surface roughness may be due to atomic migration in the film towards the lower surface energy with annealing temperature (Kar et al., 2009).

Effect of annealing on electrical properties
In both types of annealing, the Q in is increased with temperature. The probable reasons for the rise in the Q in may be due to the generation of trap centres with annealing in the nitrogen ambient. In RTA, the D it is found to be strongly dependent on the annealing temperature and it significantly reduced at 600ºC. With furnace annealing, the D it decreases with increase in annealing temperature.

Growth of AlN films on different substrates
Many a times, AlN films are made on an insulator (SiO 2 ) for isolation or it is deposited over the metallic electrodes for thin film resonators (TFR). In future, AlN film on high speed semiconductor substrates such as GaAs, InP can be exploited for high speed signal processing and Micro-Opto-Electro-Mechanical Systems (MOEMS) applications. Hence, integration of AlN films on GaAs and InP substrates for a new generation of high-speed devices/subsystems, especially for telecommunications, and radar applications are required. Growth and surface morphology of a deposited film depends not only on the kinetics of the arriving species at the substrate, but also on the nature of the substrates chosen, even if they belong to the same family. In addition, substrate orientation, thermal conductivity and thermal expansion coefficients play vital roles in film growth and its morphology. C-axis oriented AlN films are deposited on Si and SiO 2 /Si substrates by RF reactive magnetron sputtering, where the degree of orientation decreases with increase in oxide thickness. The surface roughness of the films deposited on SiO 2 /Si is higher. AlN films are also deposited on GaAs and InP substrates by reactive magnetron sputtering technique under identical deposition conditions. c-axis (002) oriented films are observed on GaAs substrates; whereas, AlN (100), (002) and (102) oriented peaks are seen in case of InP substrates. Surface morphology of the films deposited on Si and InP substrates seems to be similar, but the films on InP are little rougher with the development of nano-pores. AlN films, grown on GaAs substrates, forms bump like structures (Kar et al., 2009), which may be due to thermal and/or lattice mismatch. It is important to note that the crystallinity and stochiometry of the initial layer of AlN film also plays a significant role in the creation of defects and mismatches (Ahmed et al., 1992). Crystal orientation of AlN films is also a strong function of the bottom metal electrodes. AlN films deposited on metals (Al, Cu, Cr, Au) are caxis oriented, whereas the films deposited on Al and Cu are rough with larger grains.

AlN film based acoustic device
SAW and BAW are two import types of acoustic wave devices used in RF comunication. These devices can be realized either on a solid substrate/film or through micromachined suspended beam structures. In SAW devices, an elastic wave travels on the surface of a piezoelectric material and displaces the atoms about their equilibrium positions at the interface of piezoelectric film and solid substrate. The neighboring atoms at the interface then produce restoring forces to bring the displaced atoms back to their original positions. SAW can be generated by placing two inter digital transducers (IDT) either sides of the substrate. These IDTs have alternating periodic fingers (Fig. 7). RF signal is applied one of these alternating polarity fingers (IDT) that produces elastic mechanical wave in the substrate. This wave travels along the substrate and also collected by placing another IDT on the piezoelectric material, some distance away from the first IDT. The second IDT collects the RF signal, which can be retransformed into the electric signal. As the elastic-mechanical wave has the speed of acoustic wave, it introduces the delay of signal by 10 3 order. This is the prime use of SAW device. The periodicity p, (centre-to-centre spacing between neighbouring IDT fingers of same polarity) becomes the wavelength of the acoustic wave, and dictates its frequency f = v/p, where f and v represent acoustic wave frequency and acoustic propagation velocity, respectively.

Fig. 7. Schematic diagram of SAW device
Thin Film Bulk Acoustic Resonator (FBAR) device consisting of a piezoelectric material sandwiched between two electrodes and is acoustically de-coupled from the surrounding medium. FBAR devices, using AlN piezoelectric with thickness ranging from tenth of micrometers to several micrometers, resonate in the cellular bands of cell phones and other wireless applications. On applying voltage across the electrodes, the piezoelectric thin film undergoes a shear deformation, and a BAW resonance occurs in the AlN film due to coherent reflection at the top and bottom boundaries of the metal film or plate electrodes. The frequency of resonance is dependent on the physical structures; hence, desired resonant frequency can be obtained by tailoring physical dimension of the structure. For RF frequency, physical dimension of resonators can be realized by using MEMS technology.

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Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication 573 MEMS resonators are comprised of a microscale mechanical element, which converts mechanical to electrical signal and vice versa. One of the prominent resonator structures is MEMS cantilever, which is based on thin piezoelectric films. Film resonates when an ac voltage is applied across the film. Resonator can be made without piezoelectric material (electrostatic, capacitive resonator), but it suffers with large resistance, in the range of MΩ, and depends on driving voltage. On the other hand, piezoelectric resonators have smaller resistance of the order of KΩ and are more suitable for UHF device applications. (Lakin, 1999;Quandt et al., 2000;Humad et al., 2003). In addition, the output is easier to sense in a piezoelectric resonator. Furthermore, a piezoelectric resonator has certain advantages over the electrostatic resonator (capacitive resonators), such as low current consumption and lower actuation voltages (Olivares et al.;. But the quality factor (Q) of piezoelectric resonator is smaller than that of a capacitive resonator. The quality factor of any resonator is proportional to the decay time, and is inversely proportional to the bandwidth around resonance. Higher Q represents higher frequency stability and accuracy capability of the resonator (De Los Santos, 1999).

Evaluation of AlN films through SAW devices
Higher RF power (400 W) and nitrogen concentration (80%), moderate substrate temperature (200 °C) and sputtering pressure (6×10 -3 mbar), lower target-substrate distance (5 cm) is suitable for the growth of smooth, highly c-axis oriented AlN film with better electrical properties. A c-axis (002) oriented peak is recorded at 2θ value of 36.1º (Fig. 8). The atomic force micrograph of the film shows dense microstructure with continuous grain growth (inset of Fig. 8). This kind of film is suitable for SAW devices. In a typical case, each IDT consisted of 25 pairs of fingers/electrodes with 30 μm centre-tocentre spacing between the two neighbouring fingers comprising a pair (p/2). The width of each finger/electrode is designed to be 15 μm (p/4) with each of 6.0 mm length and 5.0 mm overlap, producing a SAW filter with an acoustic wavelength of 60 μm (Kar et al., 2009). The SAW device parameters are: AlN film thickness = 0.92 μm, acoustic wavelength = 60 μm, SAW velocity = 5058 m/sec, electromechanical coupling coefficient (K 2 ) = 0.34%. X 0.500 μm/div Z 55.000 nm/div Time response, due to acoustic frequency alone, is found after the gating out the response due to electromagnetic feed through. For the centre to centre distance between the two IDT's (d) = 7 mm, the main SAW signal centred at time (delay) = d/ V SAW = 7/5058 = 1.384 μs is obtained. The central acoustic frequency (f 0 ) response after the gating out is observed at 84.304 MHz (Fig. 9).  (French, 2001;Ni et al., 2005). Another technique, which is more versatile, CMOS process compatible and nontoxic, provides better selective etching using doped tetramethylammonium hydroxide (TMAH) etchant (Biswas et al., 2006). The characteristics of these three etchants are listed in Table 2. Many AlN and Al based MEMS structures are also isolated from silicon by silicon dioxide. Hence, their selective etching is very important. Diluted tetramethylammonium hydroxide (TMAH, 5 wt %), doped with silicic acid (30.5 g/l) and ammonium persulphate (5.5 g/l), is suitable for CMOS silicon microprocessing. To protect Al and AlN, silicic acid has been chosen instead of pure silicon powder, because silicic acid dissolves quickly in TMAH solution. Ammonium persulphate (AP) is also added to the above-mentioned solution to reduce the surface roughness of etched silicon. The etch rate of silicon in doped TMAH is found to be 50 μm/hour. During silicon etching the Al, AlN and SiO 2 films are used as mask layers (Fig. 10). Low etch rates of Al and AlN (18-30 nm/hour) as well as SiO 2 (2.5 nm/hour) are found to be suitable for MEMS applications. Probable reason for low etch rate of Al may be the formation of a passivating layer during TMAH etching (Fujitsuka et al., 2004). Dilute TMAH is a well known etchant for AlN film (Kim et al., 2004) and Al as well. But doped TMAH shows significantly lower etch rates for AlN and Al, which are exploited for AlN based suspended microstructures. Fig. 10

Conclusion
This chapter focuses on the study of RF sputtered AlN films in view of ICs, acoustic devices and MEMS applications. It is divided into two distinct parts; growth, characterization and optimization of device worthy AlN film (mostly on silicon), and demonstration of acoustic and MEMS device applications. The morphological and electrical properties of RF sputtered AlN films are studied with sputtering power, deposition temperature, sputtering pressure, gas flow ratio and target to substrate spacing (D ts ). Higher RF power (400 W) and nitrogen concentration (80%), moderate substrate temperature (200 °C) and sputtering pressure (6×10 -3 mbar), lower target-substrate distance (5 cm) is suitable for the growth of smooth, highly c-axis oriented film with better electrical properties. Post-deposition (RTA and furnace) annealing has a significant impact on the morphology as well as the electrical properties. The RTA processed AlN films have relatively high c-axis (002) orientation films at 800 ºC, where microcracks are appeared during RTA process at 1000 ºC. Bulk charge density is increased with annealing temperature both types of annealing. A significant reduction in interface charge density is found at 600ºC with RTA process, whereas it decreases with furnace annealing temperature. AlN films are deposited and characterized on different substrates by RF reactive magnetron sputtering. On SiO 2 /Si substrates, (002) orientation is deteriorated and surface roughness of the films is increased with the increase in oxide thickness. c-axis (002) oriented films are observed on Si and GaAs substrates, whereas AlN (100), (002) and (102) oriented peaks are seen on InP substrates. AlN films, deposited on GaAs substrate, show bump like structures. c-axis oriented AlN films are also observed on metallic films. The AlN films, deposited on Al and Cu, are found to be rough with larger grains. Piezoelectric nature of RF deposited AlN films is ascertained from the performance of a SAW device. This device is centred around a frequency of 84.3 MHz and acoustic phase velocity is inferred to be 5058 m/ sec with K 2 of 0.34 %. The TMAH solution, doped with an appropriate ratio of silicic acid and ammonium persulphate, is developed for micromachining of AlN based structures. The etch rate of silicon is around 50 μm/hour. On the otherhand, the doped solution has negligible impact on Al, AlN and SiO 2 films. The growth of highly (002) oriented AlN films, post deposition process and micromachining method will provide an appropriate platform for the fabrication of futuristic electronic devices.