Open access peer-reviewed chapter

Electron Transport Properties of Gate-Defined GaAs/AlxGa1-xAs Quantum Dot

By Dong Ho Wu and Bernard R. Matis

Submitted: April 28th 2011Reviewed: January 30th 2012Published: June 13th 2012

DOI: 10.5772/34225

Downloaded: 2405

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Dong Ho Wu and Bernard R. Matis (June 13th 2012). Electron Transport Properties of Gate-Defined GaAs/AlxGa1-xAs Quantum Dot, Fingerprints in the Optical and Transport Properties of Quantum Dots, Ameenah Al-Ahmadi, IntechOpen, DOI: 10.5772/34225. Available from:

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