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High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method

Written By

Kyoichi Kinoshita and Shinichi Yoda

Submitted: March 2nd, 2011 Published: January 13th, 2012

DOI: 10.5772/28711

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Written By

Kyoichi Kinoshita and Shinichi Yoda

Submitted: March 2nd, 2011 Published: January 13th, 2012