Open access peer-reviewed chapter

The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

Written By

Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

Submitted: November 18th, 2010Reviewed: April 15th, 2011Published: October 10th, 2011

DOI: 10.5772/22256

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Written By

Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

Submitted: November 18th, 2010Reviewed: April 15th, 2011Published: October 10th, 2011