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The Formation of Silicon Carbide in the SiCx Layers (x = 0.03–1.4) Formed by Multiple Implantation of C Ions in Si

Written By

Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

Submitted: 18 November 2010 Published: 10 October 2011

DOI: 10.5772/22256

From the Edited Volume

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

Edited by Moumita Mukherjee

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Written By

Kair Kh. Nussupov and Nurzhan B. Beisenkhanov

Submitted: 18 November 2010 Published: 10 October 2011