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Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film

Written By

Chien-Min Cheng, Kai-Huang Chen, Chun-Cheng Lin, Ying-Chung Chen, Chih-Sheng Chen and Ping-Kuan Chang

Submitted: 11 October 2010 Published: 23 August 2011

DOI: 10.5772/16405

From the Edited Volume

Ferroelectrics - Applications

Edited by Mickaël Lallart

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Written By

Chien-Min Cheng, Kai-Huang Chen, Chun-Cheng Lin, Ying-Chung Chen, Chih-Sheng Chen and Ping-Kuan Chang

Submitted: 11 October 2010 Published: 23 August 2011