TY  - CHAP
AU  - Kobeleva Svetlana Petrovna
AU  - Iliya Anfimov
AU  - Sergey Yurchuk
ED  - Sanghyun Lee
Y1  - 2018-10-03
PY  - 2018
T1  - Phosphorus and Gallium Diffusion in Ge Sublayer of In0.01Ga0.99As/In0.56Ga0.44P/Ge Heterostructures
N2  - Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the scope of their knowledge.
BT  - Advanced Material and Device Applications with Germanium
SP  - Ch. 3
UR  - https://doi.org/10.5772/intechopen.78347
DO  - 10.5772/intechopen.78347
SN  - 978-1-78984-032-2
PB  - IntechOpen
CY  - Rijeka
Y2  - 2024-04-19
ER  -