TY  - CHAP
AU  - Malek Gassoumi
AU  - Hassen Maaref
ED  - Yasuto Hijikata
Y1  - 2012-10-16
PY  - 2012
T1  - Conductance Deep-Level Transient Spectroscopic Study of 4H- SiC MESFET and Traps
N2  - Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
BT  - Physics and Technology of Silicon Carbide Devices
SP  - Ch. 11
UR  - https://doi.org/10.5772/51212
DO  - 10.5772/51212
SN  - 
PB  - IntechOpen
CY  - Rijeka
Y2  - 2024-04-27
ER  -