TY  - CHAP
AU  - Valery Mikoushkin
ED  - Mark Goorsky
Y1  - 2012-05-30
PY  - 2012
T1  - Nitridation of GaAs Surface by Low Energy Ion Implantation with In Situ Control of Chemical Composition
N2  - Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.
BT  - Ion Implantation
SP  - Ch. 9
UR  - https://doi.org/10.5772/34863
DO  - 10.5772/34863
SN  - 
PB  - IntechOpen
CY  - Rijeka
Y2  - 2024-04-25
ER  -