TY - CHAP AU - Stefania Maria Serena Privitera ED - Mark Goorsky Y1 - 2012-05-30 PY - 2012 T1 - Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications N2 - Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book. BT - Ion Implantation SP - Ch. 7 UR - https://doi.org/10.5772/35338 DO - 10.5772/35338 SN - PB - IntechOpen CY - Rijeka Y2 - 2024-03-28 ER -