TY  - CHAP
AU  - R. C. Fadanelli
AU  - M. Behar
AU  - J. F. Dias
ED  - Mark Goorsky
Y1  - 2012-05-30
PY  - 2012
T1  - Coulomb Heating Behaviour of Fast Light Diclusters in Si<100> Direction
N2  - Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.
BT  - Ion Implantation
SP  - Ch. 3
UR  - https://doi.org/10.5772/35696
DO  - 10.5772/35696
SN  - 
PB  - IntechOpen
CY  - Rijeka
Y2  - 2024-05-11
ER  -