TY  - CHAP
AU  - Chien-Min Cheng
AU  - Kai-Huang Chen
AU  - Chun-Cheng Lin
AU  - Ying-Chung Chen
AU  - Chih-Sheng Chen
AU  - Ping-Kuan Chang
ED  - Mickaël Lallart
Y1  - 2011-08-23
PY  - 2011
T1  - Fabrication and Study on One-Transistor-Capacitor Structure of Nonvolatile Random Access Memory TFT Devices Using Ferroelectric Gated Oxide Film
N2  - Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.
BT  - Ferroelectrics
SP  - Ch. 8
UR  - https://doi.org/10.5772/16405
DO  - 10.5772/16405
SN  - 
PB  - IntechOpen
CY  - Rijeka
Y2  - 2024-04-19
ER  -