TY  - CHAP
AU  - Kazuhiro Mochizuki
ED  - Rosario Gerhardt
Y1  - 2011-04-04
PY  - 2011
T1  - One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide
N2  - In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
BT  - Properties and Applications of Silicon Carbide
SP  - Ch. 2
UR  - https://doi.org/10.5772/14553
DO  - 10.5772/14553
SN  - 
PB  - IntechOpen
CY  - Rijeka
Y2  - 2024-04-18
ER  -