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High-purity Refractory Metals for Thin Film Metallization of VLSI

By Vadim Glebovsky

Submitted: November 11th 2016Reviewed: April 11th 2017Published: February 28th 2018

DOI: 10.5772/intechopen.69126

Downloaded: 228

© 2018 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Vadim Glebovsky (February 28th 2018). High-purity Refractory Metals for Thin Film Metallization of VLSI, Very-Large-Scale Integration Kim Ho Yeap and Humaira Nisar, IntechOpen, DOI: 10.5772/intechopen.69126. Available from:

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