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Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

By S. Lawrence Selvaraj and Takashi Egawa

Submitted: May 17th 2011Reviewed: October 7th 2011Published: April 4th 2012

DOI: 10.5772/35876

Downloaded: 3570

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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S. Lawrence Selvaraj and Takashi Egawa (April 4th 2012). Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates, The Transmission Electron Microscope Khan Maaz, IntechOpen, DOI: 10.5772/35876. Available from:

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