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Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy

Written By

Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kijima, Yoshio Ohshita and Masafumi Yamaguchi

Submitted: 08 November 2010 Published: 02 November 2011

DOI: 10.5772/20234

From the Edited Volume

Solar Cells - New Aspects and Solutions

Edited by Leonid A. Kosyachenko

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Written By

Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kijima, Yoshio Ohshita and Masafumi Yamaguchi

Submitted: 08 November 2010 Published: 02 November 2011