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Self-Assembled InAs(N) Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (100)*

By Alvaro Pulzara-Mora, Juan Salvador Rojas-Ramírez, Victor Hugo Méndez García, Jorge A. Huerta-Ruelas, Julio Mendoza Alvarez and Maximo López López

Submitted: May 9th 2011Reviewed: April 16th 2012Published: June 13th 2012

DOI: 10.5772/45972

Downloaded: 1846

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Alvaro Pulzara-Mora, Juan Salvador Rojas-Ramírez, Victor Hugo Méndez García, Jorge A. Huerta-Ruelas, Julio Mendoza Alvarez and Maximo López López (June 13th 2012). Self-Assembled InAs(N) Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (100)*, State-of-the-Art of Quantum Dot System Fabrications, Ameenah Al-Ahmadi, IntechOpen, DOI: 10.5772/45972. Available from:

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