Open access peer-reviewed chapter

Formation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique

By Yoshiaki Nakamura and Masakazu Ichikawa

Submitted: May 18th 2011Reviewed: September 23rd 2011Published: June 13th 2012

DOI: 10.5772/35995

Downloaded: 1072

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Yoshiaki Nakamura and Masakazu Ichikawa (June 13th 2012). Formation of Ultrahigh Density Quantum Dots Epitaxially Grown on Si Substrates Using Ultrathin SiO2 Film Technique, State-of-the-Art of Quantum Dot System Fabrications Ameenah Al-Ahmadi, IntechOpen, DOI: 10.5772/35995. Available from:

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