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Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application

Written By

HongYu Yu

Published: 01 January 2010

DOI: 10.5772/6879

From the Edited Volume

Solid State Circuits Technologies

Edited by Jacobus W. Swart

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Written By

HongYu Yu

Published: 01 January 2010