Open access peer-reviewed chapter

Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy

By Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kijima, Yoshio Ohshita and Masafumi Yamaguchi

Submitted: November 8th 2010Reviewed: April 11th 2011Published: November 2nd 2011

DOI: 10.5772/20234

Downloaded: 1422

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Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kijima, Yoshio Ohshita and Masafumi Yamaguchi (November 2nd 2011). Investigation of Lattice Defects in GaAsN Grown by Chemical Beam Epitaxy Using Deep Level Transient Spectroscopy, Solar Cells - New Aspects and Solutions, Leonid A. Kosyachenko, IntechOpen, DOI: 10.5772/20234. Available from:

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